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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact <i>in situ</i> with efficiencies close to 23%
摘要： We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p+) hole contact and a‐Si:H (i/n+) electron contact are achieved by partially etching a blanket a‐Si:H (i/p+) stack through an SiOx hard mask to remove only the p+ a‐Si:H layer and replace it with an n+ a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (VOC). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J02‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a VOC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.
关键词： interdigitated back contact (IBC),H2 plasma,amorphous silicon,heterojunction,dry etch,process simplification,NF3/Ar plasma,in situ processing
更新于2025-09-23 15:23:52
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
摘要： The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, ?ow rate, and chamber pressure, etc. In particular, the microtrench at the bottom corner of the mesa sidewall was eliminated by a combination of ICP dry etching and tetramethylammonium hydroxide (TMAH) wet treatment. Finally, a highly anisotropic pro?le of the mesa sidewall was realized by using the optimized etch recipe, and a quasi-vertical GaN SBD was demonstrated, achieving a low reverse current density of 10?8 A/cm2 at ?10 V.
关键词： quasi-vertical,inductively coupled plasma (ICP),GaN,dry etch,sidewall pro?le,mesa,Schottky barrier diode (SBD)
更新于2025-09-19 17:13:59