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- Single crystals
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Single-crystal investigation of the proposed type-II Weyl semimetal CeAlGe
摘要： We present details of materials synthesis, crystal structure, and anisotropic magnetic properties of single crystals of CeAlGe, a proposed type-II Weyl semimetal. Single-crystal x-ray diffraction con?rms that CeAlGe forms in a noncentrosymmetric I 41md space group, in line with predictions of nontrivial topology. Magnetization, speci?c heat, and electrical transport measurements were used to con?rm antiferromagnetic order below 5 K, with an estimated magnon excitation gap of (cid:2) = 9.11 K from heat capacity and hole-like carrier density of 1.4 × 1020 cm?3 from Hall effect measurements. The easy magnetic axis is along the [100] crystallographic direction, indicating that the moment lies in the tetragonal ab plane below 7 K. A spin-?op transition to less than 1 μB /Ce is observed to occur below 30 kOe at 1.8 K in the M (H ) (H(cid:2)a) data. Small magnetic ?elds of 3 and 30 kOe are suf?cient to suppress magnetic order when applied along the a and c axes, respectively, resulting in a complex T –H phase diagram for H(cid:2)a and a simpler one for H(cid:2)c.
关键词： Weyl semimetal,CeAlGe,electrical transport measurements,single-crystal x-ray diffraction,antiferromagnetic order,magnetization,specific heat
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要： Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词： semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Conference on Imaging Systems and Techniques (IST) - Krakow, Poland (2018.10.16-2018.10.18)] 2018 IEEE International Conference on Imaging Systems and Techniques (IST) - Measurement of External-Solids Circulation Flux in a Circulating Fluidized Bed by Electrical Capacitance Tomography and Microwave Doppler Radar
摘要： In a gas-solids circulating fluidized bed (CFB), the external-solids circulating flux (Gs) has important effect on the mass and heat transfer inside the CFB system. To improve the process operation efficiency and reduce the emission of pollution, it is important to accurately measure Gs. In this paper, the authors proposed a new approach to measuring Gs using electrical capacitance tomography (ECT) and microwave Doppler radar (MDR) velocity meter based on a lab-scale CFB system with multi-cyclone separators. The ECT sensor is used to get the solids volume fraction in the cross section of the standpipe and MDR is used to measure the averaged solids velocity along the standpipes. Based on those two values, Gs can be addressed. Meanwhile, computation particle fluid dynamic (CPFD) is used to investigated the gas-solids flow hydrodynamic characteristics and verified the measurement results.
关键词： CPFD simulation,Microwave Doppler radar,External-Solids Circulating flux,Electrical capacitance tomography
更新于2025-09-04 15:30:14
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Point defect chemistry of donor-doped bismuth titanate ceramic
摘要： This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi4Ti3O12), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi4Ti3O12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi4Ti3O12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (V??O). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges (h?) and oxygen vacancies (V??O).
关键词： defect chemistry,X-ray diffraction,Rietveld refinement,impedance spectroscopy,solid-phase reaction,barium doped bismuth titanate,electron spin resonance spectroscopy,electrical properties,oxygen vacancies
更新于2025-09-04 15:30:14