The Monte Carlo Simulation of Secondary Electrons Excitation in the Resist PMMA

摘要： The Monte Carlo method was used to simulate the process of secondary electrons excitation in resist PMMA with Mott cross section and dielectric function model. By analyzing the characteristics of secondary electrons excitation in the resist PMMA, and the simulation of secondary electrons energy range, we hold the opinion that the secondary electrons can not be ignored in the electron beam lithography.