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Near-field radiative heat transfer between black phosphorus and graphene sheet
摘要： Low thermal conductivity of black phosphorus (BP) makes it difficult to cool BP-based electronic or optoelectronic devices. Therefore, developing a cooling strategy for BP-based nano devices is highly required. We theoretically study the near-field radiative heat transfer between BP sheets as well as between BP and graphene. We find that the heat transfer between BP sheets is determined by its electron doping. Plasmons excited by BP in different directions dominate the heat transfer for different electron doping. At optimum electron doping, heat transfer between the BP sheets increases significantly. The heat transfer between BP and graphene is dependent on both the electron doping of BP and chemical potential of graphene. Modulating the chemical potential of graphene can result in a strong coupling between graphene plasmons and BP plasmons, which will lead to a significant enhancement of heat transfer between BP and graphene. Our results are not only meaningful in controlling the heat transfer between BP-based structures but also helpful in developing cooling strategies for BP-based nano devices.
关键词： near-field radiative heat transfer,plasmons,graphene,black phosphorus,chemical potential,electron doping
更新于2025-09-23 15:21:01
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Carrier reduction studies of type-II superlattice materials for very long wavelength infrared sensing
摘要： There are continuing efforts to develop type-II superlattice (SL) materials for very long wavelength infrared (VLWIR) detector applications. However, the SLs have high residual electron background doping densities that depend on SL growth conditions, which lead to shorter minority carrier lifetime and lower performance parameters than theoretically predicted. In this study, the authors compare the technical advantages of using InAs/GaInSb over InAs/GaSb SL with respect to reducing the electron doping levels. Our temperature-dependent electrical transport measurements show that the InAs/GaInSb SL design has a lower electron density than the InAs/GaSb SL with the same bandgap and have electron densities (mobilities) on the order of the mid 1011 cm?2 (25 000 cm2/V s). Since small period InAs/GaInSb SLs also produce greater Auger recombination suppression for a given VLWIR gap than the large period InAs/GaSb SL, the InAs/GaInSb SL appears to be a better candidate for long lifetime IR materials for future very long wavelength infrared devices.
关键词： very long wavelength infrared,mobility,InAs/GaSb,Auger recombination,InAs/GaInSb,type-II superlattice,carrier reduction,electron doping
更新于2025-09-19 17:15:36