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Single-photon emission from single-electron transport in a SAW-driven lateral light-emitting diode
摘要： The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre-coupled quantum transfer. In this work, using only regular lithography techniques on a conventional 15 nm GaAs quantum well, we demonstrate acoustically-driven generation of single photons from single electrons, without the need for a self-assembled quantum dot. In this device, a single electron is carried in a potential minimum of a surface acoustic wave (SAW) and is transported to a region of holes to form an exciton. The exciton then decays and creates a single optical photon within 100 ps. This SAW-driven electroluminescence, without optimisation, yields photon antibunching with g(2)(0) = 0.39 ± 0.05 in the single-electron limit (g(2)(0) = 0.63 ± 0.03 in the raw histogram). Our work marks the first step towards electron-to-photon (spin-to-polarisation) qubit conversion for scaleable quantum computing architectures.
关键词： quantum computing,GaAs quantum well,electron-spin qubits,surface acoustic wave,single-photon emission
更新于2025-09-23 15:19:57
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Coherence of a Driven Electron Spin Qubit Actively Decoupled from Quasistatic Noise
摘要： The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the past decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasistatic noise inherent to any semiconductor device. We employ a feedback-control technique to actively suppress the latter, demonstrating a π-flip gate fidelity as high as 99.04 (cid:1) 0.23% in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the 1=f noise observed in isotopically purified silicon qubits.
关键词： gallium arsenide quantum dot,low-frequency noise,Rabi frequency,1=f noise,semiconductor quantum dots,π-flip gate fidelity,isotopically purified silicon qubits,feedback-control technique,high-frequency charge noise,electron spin qubits
更新于2025-09-19 17:13:59