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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Evidence for single-electron tunneling in electron energy spectra of diamond tip field emitter
摘要： Field emission from microscale diamond tips was studied using electron energy spectroscopy. A processing at high emission currents was applied to modify the atomic surface structure of pristine diamond tips. Subsequently, staircase-like current-voltage characteristics were obtained which are typical for the single-electron tunneling occurring due to the Coulomb blockade effect in emitting carbon nanostructures formed on the surface of the diamond tips. Characteristic electron energy spectra consisted of several peaks, each corresponding to a certain charging state of the emitting nanostructure. The measured spectra were used to determine the parameters of the Coulomb blockade (e.g. charging energy) and reveal peculiar features of single-electron effects in field emission systems.
关键词： electron energy spectroscopy,Coulomb blockade,single-electron tunneling,field emission
更新于2025-09-23 15:21:21
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Quantum Chip with the Optimized Tunnel Structure for Measuring a Charge Qubit Based on a Double Quantum Dot
摘要： A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration. The parameters of the system are calculated using a microscopic model of two-dimensional QDs. The time dependences of the population of the structure’s states are obtained and the current strength, sensitivity, and measuring contrast as functions of the geometric parameters of the system are determined. The effect of dissipative processes related to the acoustic phonons on the measurements is investigated and the rates of electron relaxation and dephasing in a two-level system are calculated.
关键词： quantum dot,charge qubit,acoustic phonons,single-electron transistor,quantum detector,electron tunneling
更新于2025-09-23 15:21:01
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High-Quality Reduced Graphene Oxide Electrodes for Sub-Kelvin Studies of Molecular Monolayer Junctions
摘要： Electron transport phenomena in molecular monolayers are complex and potentially different from those for example, molecule?molecule interactions. Unfortunately, access to detailed mechanistic investigations of molecular monolayer junctions at ultralow temperatures is typically hampered by the narrow range of operating temperatures for most large-area device platforms. Here, we present a highly optimized chemically derived graphene material with a near temperature-independent conductance profile. Using this material as a conducting interlayer electrode in solid-state molecular electronic devices, we show robust and reliable large-area molecular junction operation at temperatures ranging from room temperature to below 1 K, and we demonstrate the ability to measure inelastic electron tunneling spectroscopy of a conjugated molecular monolayer at cryogenic temperatures.
关键词： inelastic electron tunneling spectroscopy,cryogenic temperatures,molecular monolayers,graphene,electron transport
更新于2025-09-23 15:21:01
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Field Squeezing in a Quantum-Dot Molecule Jaynes-Cummings Model
摘要： We investigate the field squeezing in a system composed of an initial coherent field interacting with two quantum dots coupled by electron tunneling. An approximate quantum-dot molecule Jaynes-Cummings model describing the system is given, and the effects of physical quantities, such as the temperature, phonon-electron interaction, mean photon number, field detuning, and tunneling-level detuning, are discussed in detail.
关键词： Jaynes-Cummings model,phonon-electron interaction,electron tunneling,quantum-dot molecule,field squeezing
更新于2025-09-23 15:19:57
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Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots
摘要： We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a general trend just depending on the total orbital energy of the trapped electrons. We show that a qualitatively different regime is observed at relatively low filling numbers, where tunneling rates are rather controlled by the axial configuration of the electron orbital. Transmission rates versus filling are further modified by acting on the radial configuration of the orbitals by means of electrostatic gating, and the barrier transparency for the various orbitals is found to evolve as expected from numerical simulations. The possibility to exploit this mechanism to achieve a controlled continuous tuning of the tunneling rate of an individual Coulomb blockade resonance is discussed.
关键词： quantum dot,InAs/InP,nanowire,Coulomb blockade,tunnel barrier,electron tunneling rate
更新于2025-09-23 15:19:57
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Single-electron current gain in a quantum dot with three leads
摘要： The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode. A periodic modulation of the conductance versus gate voltage is observed, swapping between Coulomb blockade and single-electron tunneling. By controlling the Fermi level of a third (‘base’) lead attached to the QD, we were able to switch a single-electron current from source to drain, exceeding the single-electron current to or from the base lead. A simple model is presented revealing the role of ground- and excited states within the QD for this dynamic operation of a single-electron transistor.
关键词： electronic wavefunction,coulomb blockade,single-electron tunneling,quantum dot excitations
更新于2025-09-23 15:19:57
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Light from van der Waals quantum tunneling devices
摘要： The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways—van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructures made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling.
关键词： van der Waals heterostructures,inelastic electron tunneling,nanophotonics,light emission,quantum tunneling,optical antennas
更新于2025-09-19 17:15:36
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Nanostructuring Confinement for Controllable Interfacial Charge Transfer
摘要： Carbon nanostructures supported semiconductors are common in photocatalytic and photoelectrochemical applications, as it is expected that the nanoconductors can improve the spatial separation and transport of photogenerated charge carriers. Transfer of charge carriers through the carbon-semiconductor interface is the key electronic process, which determines the role of charge separation channels, and is sensitively influenced by band structures of the semiconductor near the contacts. Usually, this electronic process suffers from excessive energy dissipation by thermionic emission, which will undesirably prevent the interfacial charge transfer and eventually aggravate the recombination of photogenerated charge carriers. Unfortunately, this critical issue has hardly been consciously considered. Here, ultrathin dopant-free tunneling interlayers coated on the surface of graphene and sandwiched between the carbon sheets and the semiconductor nanostructures are adopted as a model system to demonstrate energy saving for the interfacial charge transfer. The nanostructuring confinement of band bending within the ultrathin interlayers in contact with the graphene sheets effectively narrows the width of the potential barriers, which enables tunneling of a substantial number of photogenerated electrons to the co-catalysts without unduly consuming energy. Besides, the dopant-free tunneling interlayers simultaneously block the transferred electrons in the sandwiched graphene sheets from leakage.
关键词： nanostructuring confinement,thermionic emission,electron tunneling,charge transfer,charge transport
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE SENSORS - New Delhi, India (2018.10.28-2018.10.31)] 2018 IEEE SENSORS - IETS in MIS Contacts: Towards a Quantum Biomimetic Electronic Nose
摘要： Inelastic electron tunneling spectroscopy (IETS) has been used to detect the vibrational modes of molecules and has been proposed as the mechanism of olfaction according to the so-called Vibration Theory. Motivated by the promise of an electronic nose that will be biomimetic - in the sense of the Vibration Theory - we demonstrate here IET spectroscopy of vibrational modes in metal-insulator-semiconductor (MIS) devices consisting of ultrathin HfO2 deposited on silicon by Atomic Layer Deposition (ALD). Low-noise IETS measurements at 10K are carried out using second harmonic detection by a standard lock-in procedure. Parallely, a filtering algorithm is applied to the measured I-V data to compute its second derivative. The IETS peaks in the filtered data and experimentally measured lock-in data are compared and are found to be in agreement with each other; as well as with other experimental vibrational energy data measured through IETS or other techniques.
关键词： smoothening algorithm,Inelastic Electron Tunneling Spectroscopy,Electronic nose
更新于2025-09-19 17:15:36