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oe1(光电查) - 科学论文

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出版时间
  • 2019
  • 2018
研究主题
  • secondary winding
  • digital signal processor
  • light emitting diode
  • light intensity detection
  • electronic current transformer
  • electrical bandpass filter
  • side-mode suppression ratio
  • cascaded filter connection
  • side modes
  • opto-electronic oscillator
应用领域
  • Optoelectronic Information Science and Engineering
  • Electrical Engineering and Automation
  • Electronic Science and Technology
机构单位
  • State Grid Fujian Electric Power Research Institute
  • Jinan University
  • Don State Technical University
  • University of Ljubljana
  • Fuzhou University
  • University College London
  • Charles Darwin University
  • University of Ottawa
553 条数据
?? 中文(中国)
  • [IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Mechanism of non-saturated field electron emission from gated p-type Si tips

    摘要: Gated p-type Si tip arrays with the same gate area (AG) but various tip numbers (Ntip) were investigated to clarify the mechanism of non-saturated electron emission. It was found that the Ntip/AG ratio determines the current increasing rate (dI/dVG) of the non-saturated emission. A surface depletion/inversion dominated electron supply model that considered the local Joule heat effect was proposed to interpret the variation of the increasing rate of the non-saturated current. Less emitter in an array would lead to a higher average current on each tip, and thereby much local Joule heat to induce a stronger non-saturated emission. This work clarifies the mechanism of non-saturated emission from gated p-type emitters, and shows that the current increasing rate can be modified by changing the Ntip/AG ratio. The findings are crucial for designing reliable and controllable Si-based electron sources.

    关键词: electron supply,vacuum electronic devices,p-type field electron emitter,Joule heat

    更新于2025-09-23 15:21:21

  • [Springer Theses] Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors || Introduction

    摘要: As the miniaturization and integration of solid-state electronic devices has continued to increase rapidly with the demands of high speed, low power consumption and high storage density, the conventional Si-based technology has lost their advantages on fabrication process. Therefore the technologies based on new materials gradually attract researchers’ attention. Among them, Indium Arsenide (InAs) nanowires (NWs) with high electron mobility is one of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.

    关键词: solid-state,high electron mobility,electronic devices,InAs nanowires,miniaturization

    更新于2025-09-23 15:21:21

  • Electronic transport induced by edge modification of graphene electrodes in single molecular device

    摘要: The aim was to study the electronic transport of molecular devices constructed by salicylidene aniline molecule and graphene electrodes using the density functional theory and non-equilibrium Green’s function. The calculated results demonstrate a switching behavior in two photoisomerizations. In addition, the modification of –OH on the edge of graphene nanoribbons induces the variety of the frontier molecular orbitals and the increase of current, but the decrease of switching ratio. The modification of F on the edge of graphene nanoribbons improves the switching ratio. We explain the negative differential resistance effect found in the device by transmission spectra and the evolution of local density of states at the bias. The results indicate that different modifications on the edge of graphene nanoribbons influence the electronic transport. This method can improve the application of the device in future molecular circuits.

    关键词: Electronic transport,Edge modification,Molecular switching

    更新于2025-09-23 15:21:21

  • Electronic structure and UV–Vis spectra simulation of square planar Bis(1-(4-methylphenylazo)-2-naphtol)-Transition metal complexes [M(L)2]x (M?=?Ni, Pd, Pt, Cu, Ag, and x?=???1, 0, +?1): DFT and TD-DFT study

    摘要: DFT/B3LYP calculations with full geometry optimizations have been carried out on 1-phenylazo-2-naphthol and their metal complexes of formula M(MePhNap)2 (M = Ni, Pd, Pt, Cu, Ag, and MePhNap = 1-(? 4-methylphenylazo)-2-naphtol) in their neutral, oxidized, and reduced forms. The predicted structures provide to the M(II) metal ions the square planar geometry and distorted azo ligand. The TD-DFT theoretical study performed on the optimized geometry allowed us to predict the UV–Vis spectra and to identify quite clearly the spectral position and the nature of the different electronic transitions according to their molecular orbital localization. Large HOMO-LUMO gaps are calculated for all optimized structures suggesting good chemical stabilities, hence, reproducing the available UV–Vis spectra and compared to that of free ligand. The electronic spectra obtained in DMSO and ethanol polar solvents predict more important red shifts than those obtained in hexane as nonpolar one.

    关键词: Electronic transitions,Molecular orbital localization,Metal-ligand coordination,Azo dye

    更新于2025-09-23 15:21:21

  • Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications

    摘要: In this study, the current–voltage characteristics of non-doped and distinct graphene (Gr)-doped polyvinyl alcohol (PVA) interlayers in metal/organic polymer semiconductor type Schottky junction structures (SJSs) were investigated on both forward and reverse biases under distinct levels of illumination. The distinct doping concentration ratios (1%, 3% and 7%) of the Gr added to the PVA interlayers were compared by taking into account the basic electrical parameters, such as saturation current (Io), ideality factor (n), barrier height (UBo), series (Rs) and shunt resistance (Rsh). The 7% Gr-doped structure displayed the lowest Io values at zero bias. Moreover, the results indicated that the 7% Gr-doped PVA decreased the n value but increased the UBo value compared with values associated with structures that have different doping concentrations. In terms of quality and reliability, the Rs and Rsh values of the SJSs were obtained using Ohm’s law and Cheung’s functions, and the 7% Gr-doped structure eventually displayed more uniformly distributed and lower Rs values and the highest Rsh values. Consequently, the 7% Gr-doped structure had better overall quality because of its superior electrical properties compared with structures that have other doping concentrations. Therefore, the 7% Gr-doped structure can be used as a photodiode in electronic devices.

    关键词: photovoltaic,basic electronic properties,organic polymer nanocomposites,Graphene,I–V characteristics

    更新于2025-09-23 15:21:21

  • Electronic, Optical and Elastic Properties of Cu2CdGeSe4: A First-Principles Study

    摘要: Using the augmented plane wave + local orbitals method with different approximation functionals, we investigate systematically the electronic, optical and elastic properties of stannite-type Cu2CdGeSe4. Among different approximation functionals, the modi?ed Becke–Johnson (mBJ) potential with Hubbard-corrected parameter U (mBJ + U) gives the most reliable results on the electronic properties of Cu2CdGeSe4 in comparison with the experimental data. Elastic modulus, elastic constants and the Poisson’s ratio of Cu2CdGeSe4 were calculated using the Elastic software package. Optical properties such as wide spectrum of absorbed photon energy, namely 1.3–27.2 eV, high absorption coef?cient (above 104 cm?1) and optical anisotropy suggest the application of Cu2CdGeSe4 in solar cells.

    关键词: electronic structure,optical properties,Optical materials,elastic properties,ab initio calculations

    更新于2025-09-23 15:21:21

  • Orthogonal gas sensor arrays by chemoresistive material design

    摘要: Gas sensor arrays often lack discrimination power to different analytes and robustness to interferants, limiting their success outside of research laboratories. This is primarily due to the widely sensitive (thus weakly-selective) nature of the constituent sensors. Here, the effect of orthogonality on array accuracy and precision by selective sensor design is investigated. Therefore, arrays of (2–5) selective and non-selective sensors are formed by systematically altering array size and composition. Their performance is evaluated with 60 random combinations of ammonia, acetone and ethanol at ppb to low ppm concentrations. Best analyte predictions with high coefficients of determination (R2) of 0.96 for ammonia, 0.99 for acetone and 0.88 for ethanol are obtained with an array featuring high degree of orthogonality. This is achieved by using distinctly selective sensors (Si:MoO3 for ammonia and Si:WO3 for acetone together with Si:SnO2) that improve discrimination power and stability of the regression coefficients. On the other hand, arrays with collinear sensors (Pd:SnO2, Pt:SnO2 and Si:SnO2) hardly improve gas predictions having R2 of 0.01, 0.86 and 0.28 for ammonia, acetone and ethanol, respectively. Sometimes they even exhibited lower coefficient of determination than single sensors as a Si:MoO3 sensor alone predicts ammonia better with a R2 of 0.68.

    关键词: Ethanol,WO3,SnO2,Electronic nose,Ammonia,Gas sensor,Acetone,Flame spray pyrolysis,MoO3

    更新于2025-09-23 15:21:21

  • 4-{(Z)-[4-(Diethylamino)phenyldiazenyl]}phthalonitirle and Phthalocyanines Thereof

    摘要: 4{(Z)-[4-(Diethylamino)phenyldiazenyl]}phthalonitrile was synthesized by diazotization and azo coupling and used to prepare tetrakis-4-(4-{(Z)-[4-(diethylamino)phenyl]diazenyl})phthalocyanine and its cobalt, nickel, zinc and magnesium complexes by template synthesis. The spectral properties of the synthesized compounds were studied.

    关键词: azo chromophore,4-aminophthalonitrile,electronic absorption spectra,metal phthalocyanines

    更新于2025-09-23 15:21:21

  • Spectroscopic measurement of electronic temperature in the bubbles during single- and multibubble sonoluminescence of metal carbonyl solutions and nanodispersed suspensions

    摘要: It is for the first time that we have obtained emission-line spectra of metal atoms during single-bubble sonoluminescence of metal carbonyl W(CO)6, Mo(CO)6, Cr(CO)6 solutions in dodecane and similar spectra during single- and multibubble sonoluminescence of nanodispersed Cr(CO)6 suspensions in water, 83% H2SO4 and 74% H3PO4. Nanodispersed suspensions with an average particle size of 15–20 nm were obtained through sonodispersing and filtering Cr(CO)6 crystals in water. The method for comparing the intensities of two atomic metal lines made it possible to measure the electronic temperatures achieved in cavitation bubbles under different modes of sonolysis that vary in the range of (4.5–16)·103 K depending on the mode of sonolysis, the type of liquid and saturating gas (He, Ar, Kr) and the acoustic energy entering the solution or suspension. The electronic temperature for multibubble sonoluminescence is, on the average, by (2–2.5)·103 K less than for single-bubble sonoluminescence for all liquids in question.

    关键词: Single-bubble sonoluminescence,Multibubble sonoluminescence,Metal carbonyls,Electronic temperatures

    更新于2025-09-23 15:21:21

  • Improved Electronic Structure and Optical Performance of Bi2Te3-xSex From First-principle Calculations Within TB-mBJ Exchange Potential

    摘要: Using the first-principle calculations of density functional theory within the (FP-LAPW) method, we have investigated the structural, electronic and optical properties of Bi2Te3-xSex alloys with compositions x = 0, 1, 2 and 3 of Se. The generalized gradient approximation functional of Wu and Cohen (GGA-PBE) is used to calculate ground state structural parameters of Bi2Te3-xSex , which are in good agreement with theoretical and experimental data. The electronic band structures and optical constants have been improved with Tran-Blaha modified Becker-Johnson (TB-mBJ) parameterization scheme. Also, we have analyzed in detail the performance of dielectric function, refractive index, reflectivity and optical conductivity of these alloys. Our results show that Bi2Te3-xSex alloys are promising candidates for optoelectronic applications especially in the Infrared and visible fields. Bi2Te3-xSex materials have a direct band gap and can be tuned from 0.1706 eV to 0.7819 eV by varying In composition so emission was tunable from 1.58 to 7.26 micrometers (infrared field), in addition for their direct band gap and in view of their attractive optical properties such conductivity, absorption and reflectivity these materials is considered as promising materials for optoelectronic applications.

    关键词: Electronic structure,TB-mBJ,Optical properties,First-principle calculations

    更新于2025-09-23 15:21:21