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oe1(光电查) - 科学论文

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  • Electronic transport in degenerate (100) scandium nitride thin films on magnesium oxide substrates

    摘要： Scandium nitride (ScN) is a degenerate n-type semiconductor with very high carrier concentrations, low resistivity, and carrier mobilities comparable to those of transparent conducting oxides such as zinc oxide. Because of its small lattice mismatch to gallium nitride (GaN), <1%, ScN is considered a very promising material for future GaN based electronics. Impurities are the source of the degeneracy. Yet, which specific impurities are the cause has remained in contention. ScN thin films of various thicknesses were grown on magnesium oxide substrates in a (001) orientation using reactive magnetron sputtering across a range of deposition conditions. X-ray diffraction was used to verify crystal orientation. Film thicknesses ranging from 39 to 85 nm were measured using scanning electron microscopy. The electronic transport properties of the films were characterized using Hall-effect measurements at temperatures ranging from 10 to 320 K. At 10 K, the electron concentration varies from 4.4 (cid:2) 1020 to 1.5 (cid:2) 1021 cm(cid:3)3, resistivity from 2.1 (cid:2) 10(cid:3)4 to 5.0 (cid:2) 10(cid:3)5 X(cid:4)cm, and Hall mobility from 66 to 97 cm2/V(cid:4)s. Secondary ion mass spectroscopy (SIMS) was used to determine film compositions. Finally, density functional theory (DFT) was used to compute the activation energies for various point defects including nitrogen and scandium vacancies and oxygen and fluorine substituting for nitrogen. For both oxygen and fluorine substitution, the energies were negative, indicating spontaneous formation. Nevertheless, the combined results of the Hall, SIMS, and DFT strongly suggest that oxygen substitution is the primary mechanism behind the high carrier concentration in these samples.

    关键词： degenerate n-type semiconductor,Hall-effect measurements,Scandium nitride,density functional theory,electronic transport properties

    更新于2025-09-23 15:21:21

  • Electronic transport properties of (Se80Te20)100?xZnx (2?≤?x?≤?6) chalcogenide alloys

    摘要： The bulk chalcogenide (Se80Te20)100-xZnx (2≤x≤6) alloys are prepared using melt quenching technique and electronic transport properties are studied in the frequency range 50 Hz–500 KHz and temperature range 400-520 K. The sharp peaks observed in X-ray diffraction pattern indicate the polycrystalline nature of prepared compositions. The measured dielectric properties and a.c. conductivity reveal the significant influence of Zn doping on the properties of the Se-Te matrix. The a.c. conductivity obeys Jonscher power law as ~ w s (s<1). To describe the conduction mechanism, the experimental results are analyzed in the framework of various theoretical models. The correlated barrier hopping (CBH) model successfully describe the observed frequency, temperature and composition response of ac conductivity.

    关键词： a.c. conductivity,electronic transport properties,Chalcogenide alloys,dielectric constant,dielectric loss,X-Ray diffraction

    更新于2025-09-09 09:28:46