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Light enhanced room temperature resistive NO2 sensor based on a gold-loaded organic–inorganic hybrid perovskite incorporating tin dioxide
摘要： A material is described for sensing NO2 in the gas phase. It has an architecture of type Au/MASnI3/SnO2 (where MA stands for methylammonium cation) and was fabricated by first synthesizing Au/MASnI3 and then crystallizing SnO2 on the surface by calcination. The physical and NO2 sensing properties of the composite were examined at room temperature without and with UV (365 nm) illumination, and the NO2-sensing mechanism was studied. The characterization demonstrated the formation of a p-n heterojunction structure between p-MASnI3 and n-SnO2. The sensor, best operated at a voltage of 1.1 V at room temperature, displays superior NO2 sensing performance. Figures of merit include (a) high response (Rg/Ra = 240 for 5 ppm NO2; where Rg stands for the resistance of a sensor in test gas, and Ra stands for the resistance of a sensor in air), (b) fast recovery (about 12 s), (c) excellent selectivity compared to sensors based on the use of SnO2 or Au/SnO2 only, both at room temperature under UV illumination; (d) a low detection limit (55 ppb), and (e) a linear response between 0.5 and 10 ppm of NO2. The enhanced sensing performance is mainly attributed to the high light absorption capacity of MASnI3, the easy generation and transfer of photo-induced electrons from MASnI3 to the conduction band of SnO2, and the catalytic effect of gold nanoparticles.
关键词： Light absorbing material,SPR effect,Photo generated electrons,Gas sensing,P-n junction,Catalytic effect,Heterojunction,SnO2,UV light,MASnI3
更新于2025-09-23 15:23:52
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Angular streaking of Auger-electrons by THz field
摘要： Rotational streaking by a circularly polarized THz field of Auger electrons generated by a short extreme ultraviolet (XUV) or X-ray pulse is theoretically investigated. The character of the streaking pattern depends on three main parameters: the duration of the XUV pulse, the Auger decay time-of-life and the period of the THz field. Different cases with various interrelations of these parameters are discussed. Examples of the patterns are calculated within the strong field approximation. Correspondence between the angular streaking of electrons in the processes of photoionization and Auger ionization is considered. Retrieval of the Auger decay parameters from circular streaking spectrum is discussed.
关键词： THz field,strong field approximation,Auger electrons,angular streaking,ultrafast processes
更新于2025-09-23 15:23:52
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The Monte Carlo Simulation of Secondary Electrons Excitation in the Resist PMMA
摘要： The Monte Carlo method was used to simulate the process of secondary electrons excitation in resist PMMA with Mott cross section and dielectric function model. By analyzing the characteristics of secondary electrons excitation in the resist PMMA, and the simulation of secondary electrons energy range, we hold the opinion that the secondary electrons can not be ignored in the electron beam lithography.
关键词： Monte Carlo simulation,electron beam lithography (EBL),dielectric function,secondary electrons
更新于2025-09-23 15:23:52
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Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi <sub/>2</sub> Se <sub/>3</sub>
摘要： Topologically protected surface states of three-dimensional topological insulators provide a model framework for studying massless Dirac electrons in two dimensions. Usually a step on the surface of a topological insulator is treated as a scatterer for the Dirac electrons, and the study of its effect is focused on the interference of the incident and scattered electrons. Then a major role plays the warping of the Dirac cone far from the Dirac point. The existence of another significant effect near the Dirac point brought about by the presence of steps is experimentally demonstrated here. Namely the band bending in the vicinity of steps leads to formation of 1D bound states in the corresponding potential wells. The observation of bound states in such potential wells in our scanning tunneling microscopy and spectroscopy investigation of the surface of the topological insulator Bi2Se3 is reported. Numerical simulations support our conclusion and provide a recipe for the identification of such states.
关键词： density of states,Dirac electrons,surface states,edge states,bound states,scanning tunneling microscopy,Bi2Se3,topological insulators,scanning tunneling spectroscopy
更新于2025-09-23 15:23:52
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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic On-Resistance in GaN HEMTs
摘要： The dynamic on-resistance is problematic as it can impair the converter's efficiency due to the increased conduction loss. In this paper, the hard-switching transient's effect on the dynamic on-resistance is, for the first time, evaluated experimentally on a commercial high-voltage GaN HEMT. A new R_dyn-ds,on measurement circuit with fast sensing speed is designed, and an accurate measurement of R_dyn-ds,on can be realized experimentally within 49.6 ns after the device's current reaches to the load current. A double-pulse-test setup is designed to comprehensively evaluate the switching transient's effect on R_dyn-ds,on under different operating conditions. From the experimental results, it is found that the turn-on and turn-off gate resistance have a significant impact on the dynamic on-resistance whereas the cross-talk effect on R_dyn-ds,on is negligible. Specifically, at 400 V/25 A, more than 27% (28.2%) increase in R_dyn-ds,on is observed when the external turn-on (turn-off) gate resistance increases from 0 Ω to 20 Ω. Detailed discussion and quantitative analysis are provided to explain the experimental results. In terms of the turn-on process, it is concluded that the R_dyn-ds,on variation is mainly caused by the different numbers of generated hot electrons. For the turn-off transient, it is confirmed the variation of drain current at different dv/dt slew rate leads to the R_dyn-ds,on difference.
关键词： switching transients,Dynamic on-resistance,GaN HEMTs,hot electrons
更新于2025-09-23 15:22:29
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Runaway electrons diagnostics using segmented semiconductor detectors
摘要： A novel application of strip and pixel silicon radiation detectors for study and characterization of run-away electron events in tokamaks is presented. Main goal was to monitor runaway electrons both directly and indirectly. The strip detector was placed inside the tokamak vacuum chamber in order to monitor the run-away electrons directly. Whereas the pixel detector was placed outside the tokamak chamber behind a pin hole for monitoring the run-away electrons indirectly via radiation produce by interaction of the electrons with the plasma facing material. Results obtained using the silicon detectors are compared with already existing diagnostic methods consisting of scintillation devices detecting X-rays and photo-neutrons, providing the same results in the observable comparisons. Tests with the pixel detector proved that the pinhole camera is able to extract spatial information of interaction point (a place where the runaway electrons hit on the facing material) and the strip detectors indicate presence of additional signal from throughout the discharge. The performed experiments are innovative, illustrating possible development of new and easy to use diagnostic method.
关键词： Runaway electrons,Tokamaks,Semiconductor detectors
更新于2025-09-23 15:22:29
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Dynamic Nuclear Polarization of Metal–Organic Frameworks Using Photoexcited Triplet Electrons
摘要： While dynamic nuclear polarization based on photoexcited triplet electrons (triplet-DNP) has the potential to hyperpolarize nuclear spins of target substrates in the low magnetic field at room temperature, there has been no triplet-DNP system offering structural rigidity and substrate accessibility. Here, we report the first example of triplet-DNP of nanoporous metal?organic frameworks. Accommodation of a carboxylate-modified pentacene derivative in a partially deuterated ZIF-8 (D-ZIF-8) results in a clear 1H NMR signal enhancement over thermal equilibrium.
关键词： dynamic nuclear polarization,photoexcited triplet electrons,metal?organic frameworks,NMR signal enhancement
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Spin resolved Imaging with Scanning Field-Emission Microscopy
摘要： Secondary electrons emitted from a scanning field-emission microscope are spin analyzed with a Mott detector. Spin polarization up to 15% is observed with a lateral resolution of less than 5 nm, with a potential resolution of even less than 1 nm. In this paper the proof of principle is conducted by comparing this method with a well-established method of spin mapping and with reference samples examined by these two microscopes.
关键词： Secondary Electrons,Magnetic Imaging,Electron Microscopy,Field Emission
更新于2025-09-23 15:21:21
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Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence
摘要： Highly reducing activity of quasiballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode is veri?ed in terms of liquid-phase thin ?lm deposition. Incident electrons reduce positive ions in salt solutions coated on a target substrate, and then result in deposition of thin metal (Cu) and semiconducting (Si, Ge, and SiGe) ?lms. This mechanism is investigated here throughout the process from electron incidence to thin ?lm deposition. Thermodynamic criterion deduced from classical nucleation theory suggests that the output electron energy of the nc-Si emitter is suitable for promoting preferential reduction of target ions in solutions leading to the nuclei formation. In accordance with mass-transport analyses on generated nanoclusters, the most primary factor of thin ?lm growth is the dose of incident electron. The formulated deposition rate rapidly increases and reaches a stationary value within 0.1 s after electron incidence. The theoretical dependency of the thin ?lm thickness on the electron incidence time is consistent with the experimental results. Speci?c features of this scheme as an alternative approach for thin ?lm deposition are discussed in comparison with the conventional dry and wet processes.
关键词： nanocrystalline silicon diode,quasiballistic hot electrons,mass-transport analyses,thermodynamic criterion,liquid-phase thin film deposition
更新于2025-09-23 15:21:21
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Optical Properties and Electronic Characteristics of Cerium in the Condensed State
摘要： The results of investigating optical properties of metallic cerium in the liquid and solid film state are presented. Optical constants were measured by the ellipsometric Beattie method in the range of 0.42–2.6 μm at ambient temperature. Based on the measured refractive indices and the absorption coefficients, spectra of light conductivity σ, reflectivity R, and characteristic loss function Im ε–1 were calculated. Based on experimental measurements in the IR region, electronic characteristics of liquid cerium and its polycrystalline film and their correlation with electrical conductivity have been determined.
关键词： optical properties,cerium,rare-earth metal,characteristics of conduction electrons,ellipsometry
更新于2025-09-23 15:21:21