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Photon energy response optimization using few-channel spectroscopy dose method for Si-PIN photodetector applied in personal dose equivalent measurements
摘要： Si-PIN photodetectors having features such as low cost, small size, low weight, low voltage, and low power consumption are widely used as radiation detectors in electronic personal dosimeters (EPDs). The technical parameters of EPDs based on the Si-PIN photodetectors include photon energy response (PER), angular response, inherent error, and dose rate linearity. Among them, PER is a key parameter for evaluation of EPD measurement accuracy. At present, owing to the limitations of volume, power consumption, and EPD cost, the PER is usually corrected by a combination of single-channel counting techniques and filtering material methods. However, the above-mentioned methods have problems such as poor PER and low measurement accuracy. To solve such problems, in this study, a 1024-channel spectrometry system using a Si-PIN photodetector was developed and full-spectrum measurement in the reference radiation fields was conducted for radiation protection. The measurement results using the few-channel spectroscopy dose method showed that the PER could be controlled within ± 14% and ± 2% under the conditions of two and three energy intervals, respectively, with different channel numbers. The PER measured at 0° angle of radiation incidence meets the IEC 61526:2010 - 29% to +67% requirements of. Meanwhile, the channel number and counts-to-dose conversion factors formed in the experiment can be integrated into an EPD.
关键词： Si-PIN photodetector,Personal dose equivalent,Photon energy response,Electronic personal dosimeter,Few-channel spectroscopy dose method
更新于2025-09-23 15:19:57
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Energy response characterization of InGaP X-ray detectors
摘要： Two custom-made In0.5Ga0.5P p+-i-n+ circular mesa spectroscopic X-ray photodiodes with different diameters (200 μm and 400 μm) and a 5 μm i layer have been characterized for their response to X-ray photons within the energy range 4.95 keV to 21.17 keV. The photodiodes, operating uncooled at 30 °C, were coupled, in turn, to the same custom-made charge-sensitive preamplifier. X-ray fluorescence spectra of high-purity calibration foils excited by a Mo target X-ray tube were accumulated. The energy resolution (Full Width at Half Maximum) increased from 0.79 ± 0.02 keV at 4.95 keV to 0.83 ± 0.02 keV at 21.17 keV, and from 1.12 ± 0.02 keV at 4.95 keV to 1.15 ± 0.02 keV at 21.17 keV, when using the 200 μm and 400 μm diameter devices, respectively. Energy resolution broadening with increasing energy was attributed to increasing Fano noise (negligible incomplete charge collection noise was suggested); for the first time, the Fano factor for In0.5Ga0.5P was experimentally determined to be 0.13, suggesting a Fano limited energy resolution of 145 eV at 5.9 keV. The charge output of each system had a linear relationship with photon energy, across the investigated energy range. The count rate of both spectroscopic systems increased linearly with varying X-ray tube current up to ～105 photons s?1 cm?2 incident photon fluences. The development of In0.5Ga0.5P based spectrometers is particularly important for hard X/γ-ray astronomy, due to the material’s large linear X-ray and γ-ray absorption coefficients and the ability to operate uncooled at high temperatures.
关键词： Fano factor,InGaP,spectroscopy,energy response,X-ray detectors
更新于2025-09-09 09:28:46