- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Modulating Electrical Performances of In <sub/>2</sub> O <sub/>3</sub> Nanofiber Channel Thin Film Transistors via Sr Doping
摘要： Although In2O3 nanofibers (NFs) are considered as one of the fundamental building blocks for future electronics, the further development of these NFs devices is still seriously hindered by the large leakage current, low on/off current ratio (Ion/Ioff), and large negative threshold voltage (VTH) due to the excess carriers existed in the NFs. A simple one-step electrospinning process is employed here to effectively control the carrier concentration of In2O3 NFs by selectively doping strontium (Sr) element to improve their electrical device performance. The optimal devices (3.6 mol% Sr doping concentration) can yield the high field-effect mobility (μfe ≈ 3.67 cm2 V?1 s?1), superior Ion/Ioff ratio (≈108), and operation in the energy-efficient enhancement-mode. High-κ Al2O3 thin films can also be employed as the gate dielectric to give the gate voltage greatly reduced by 10× (from 40 to 4 V) and the μfe substantially increased by 4.8× (to 17.2 cm2 V?1 s?1). The electrospun E-mode Sr-In2O3 NF field-effect transistors (NFFETs) can as well be integrated into full swing of inverters with excellent performances, further elucidating the significant advance of this electrospinning technique toward practical applications for future low-cost, energy-efficient, large-scale, and high-performance electronics.
关键词： enhancement mode,Sr element,high performance,In2O3 nanofiber,inverter
更新于2025-09-23 15:23:52
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823 mA/mm drain current density and 945 MW/cm2 Baliga’s figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric
摘要： In this letter, we demonstrate a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric employed in enhancement-mode GaN MISFETs, where the gate recess is fabricated based on our proposed self-terminating gate recess etching technique using GaN cap layer as recess mask. By using LPCVD-Si3N4 and PEALD-AlN dual gate dielectric layer, the devices exhibit a high quality gate dielectric and a good GaN channel interface, yielding a high gate swing up to 18V and a high channel effective mobility of 137 cm2/V?s at such high gate bias. Thus, the fabricated devices feature a high maximum drain current density of 823 mA/mm, a threshold voltage of 2.6 V, an on-resistance of 7.4 Ω?mm, and an ON/OFF current ratio of 108 with gate-drain distance of 2 μm. Meanwhile, a high OFF-state breakdown voltage of 1290 V is achieved with 10 μm gate-drain distance. The corresponding specific on-resistance is as low as 1.76 mΩ?cm2, leading to a high Baliga’s ?gure of merit of 945 MW/cm2.
关键词： self-terminating etching,enhancement-mode GaN MISFETs,plasma-enhanced atomic layer deposition (PEALD) AlN,LPCVD Si3N4
更新于2025-09-23 15:21:21
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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
摘要： The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement mode transistors are investigated using temperature-dependent dc gate current measurements. In each of the different gate voltage regions, a physical model is proposed and compared to experiment. At negative gate bias, Poole–Frenkel emission (PFE) occurs within the passivation dielectric from gate to source. At positive gate bias, the p-GaN/AlGaN/GaN “p-i-n” diode is in forward operation mode, and the gate current is limited by hole supply at the Schottky contact. At low gate voltages, the current is governed by thermionic emission with Schottky barrier lowering in dislocation lines. Increasing the gate voltage and temperature results in thermally assisted tunneling (TAT) across the same barrier. An improved gate process reduces the gate current in the positive gate bias region and eliminates the onset of TAT. However, at high positive gate bias, a sharp increase in current is observed originating from PFE at the metal/p-GaN interface. Using the extracted conduction mechanisms for both devices, accurate lifetime models are constructed. The device fabricated with the novel gate process exhibits a maximum gate voltage of 7.2 V at t1% = 10 years.
关键词： time-dependent breakdown (TDB),p-GaN gate,high-electron-mobility transistor (HEMT),enhancement mode,gallium nitride (GaN),Conduction mechanism
更新于2025-09-23 15:21:21
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GaN Transistors for Efficient Power Conversion || Driving GaN Transistors
摘要： This chapter discusses the basic techniques for using GaN transistors in high performance power conversion circuits. GaN transistors generally behave like power MOSFETs, but at much higher switching speeds and power densities. A good understanding of these similarities and differences is fundamental to understanding by how much existing power conversion systems can be improved by using GaN-based device technologies. The next three chapters highlight the benefits of GaN technology, design techniques for maximum performance, and ways to avoid common pitfalls that can result from the new GaN performance capabilities. Techniques to be addressed include: how to drive a GaN transistor, how to layout a high-efficiency GaN transistor circuit, and how to model and measure, both thermally and electrically, a high power-density GaN transistor-based circuit.
关键词： power conversion,cascode configuration,GaN transistors,switching speeds,enhancement-mode,power densities
更新于2025-09-23 15:21:01
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GaN Transistors for Efficient Power Conversion || RF Performance
摘要： The main focus to this point in the book has been the switching capabilities of GaN transistors. Now, the RF capabilities of these same GaN transistors and, in particular, enhancement-mode transistors will be examined, highlighting specific RF applications that can benefit from their adoption.
关键词： power conversion,RF performance,GaN transistors,RF applications,enhancement-mode
更新于2025-09-23 15:21:01
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A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
摘要： GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.
关键词： high-electron mobility transistor (HEMTs),p-GaN,enhancement-mode,AlGaN/GaN
更新于2025-09-04 15:30:14