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Electromechanical properties of ternary BiFeO3?0.35BaTiO3–BiGaO3 piezoelectric ceramics
摘要： In the present work, composition dependent crystal structure, ferroelectric, piezoelectric, and temperature dependent dielectric properties of the BiGaO3-modified (1–x)(0.65Bi1.05FeO3–0.35BaTiO3) (BFBT35–xBG, where x = 0.00–0.03) lead-free ceramics were systematically investigated by solid-state reaction method, followed by water quenching process. The substitution of BG successfully diffuses into the lattice of the BFBT ceramics, without changing the pseudo-cubic structure of the samples. The scanning electron microscopy (SEM) results revealed that the average grain size was increased with BG-content in BFBT system. The BFBT–xBG ceramics showed a maximum in permittivity (?max) at temperatures (Tmax) above 500 °C in the compositional range of 0.00 ≤ x ≤ 0.03. The electro-strain is measured to be 0.125% (d*33 ~ 250 pm/V) under unipolar fields (5 kV/mm) for BFBT–0.01BG ceramics. The same composition (x = 0.01), large static piezoelectric constant (d33 ~ 165 pC/N) and electromechanical coupling factor (kp ~ 25%) were obtained. The above investigated characterizations suggests that BFBT–BG material is favorable for piezoelectric and high temperature applications.
关键词： Lead-free,Dielectric,Piezoelectric,Ferroelectric,BiFeO3–BaTiO3
更新于2025-09-09 09:28:46
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Structural and electrical properties of Gd-doped BiFeO3:BaTiO3 (3:2) multiferroic ceramic materials
摘要： Gadolinium doped BiFeO3:BaTiO3 (3:2) polycrystalline multiferroic ceramics have been prepared by high-temperature solid state reaction technique. X-ray diffraction (XRD) analysis at room temperature of the prepared materials confirmed the formation of the compounds with rhombohedral crystal structure. The average particle size of as prepared samples have been found in the range of 35 nm to 55 nm for different doping concentrations. The average grain size of as prepared samples are less than 100 nm which is confirmed from SEM study. The SEM of annealed compounds showed the uniform distribution of grains and the formation of dense ceramic with average grain size in the order of 4 μm. Dielectric studies of the materials reveals that the dielectric constant ( εr ) and tangent loss (tan δ) decreases with doping concentrations at room temperature. The variation of εr and tan δ with temperature was explained on the basis of Maxwell–Wagner mechanism. The values of grain resistance ( Rb ) and grain capacitance (Cb) were obtained from Nyquist plots for the different doping concentrations at 300 °C. The activation energy ( Ea ) was calculated from the curve of frequency dependent ac conductivity ( σac ) within the range 0.19 eV to 0.45 eV. The remnant polarization of the samples (0.53 μC/cm2) was measured from polarization versus electric field (P–E) hysteresis curves. The ferromagnetic behaviour of the Gd-doped BiFeO3:BaTiO3 (3:2) sample has been studied by SQUID for the lowest doping concentration. The value of remnant magnetization was found 0.0235 emu/g at room temperature.
关键词： multiferroic ceramics,dielectric properties,ferroelectric properties,Gd-doped BiFeO3:BaTiO3,ferromagnetic properties
更新于2025-09-09 09:28:46
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Ferroelectric Polarization Promoted Bulk Charge Separation for Highly Efficient CO2 Photoreduction of SrBi4Ti4O15
摘要： Fast recombination of photogenerated charge carriers in bulk remains the major obstacle for photocatalysis nowadays. Developing ferroelectrics directly as photoactive semiconducting catalysts may be promising in view of the strong ferroelectric polarization that induces the anisotropic charge separation. Here, we report a ferroelectric layered perovskite SrBi4Ti4O15 as a robust photocatalyst for efficient CO2 reduction. In the absence of co-catalysts and sacrificial agents, the annealed SrBi4Ti4O15 nanosheets with the strongest ferroelectricity cast a prominent photocatalytic CO2 reduction activity for CH4 evolution with a rate of 19.8 μmol·h-1·g-1 in the gas-solid reaction system, achieving an apparent quantum yield (AQY) of 1.33% at 365 nm, outperforming most of the reported photocatalysts. The ferroelectric hysteresis loop, piezoresponse force microscopy (PFM) and ns-level time-resolved fluorescence spectra uncover that the outstanding CO2 photoreduction activity of SrBi4Ti4O15 mainly stems from the strong ferroelectric spontaneous polarization along [100] direction, which allows efficient bulk charge separation along opposite direction. DFT calculations also disclose that both electrons and holes show the smallest effective masses along a axis, verifying the high mobility of charge carriers facilitated by ferroelectric polarization. This study suggests that the traditionally semiconducting ferroelectric materials that have long been studied as ferro/piezoelectric ceramics now may be powerfully applied in the photocatalytic field to deal with the growing energy crisis.
关键词： CO2 photoreduction,ferroelectric perovskite,spontaneous polarization,SrBi4Ti4O15 nanosheets,piezoelectric-catalysis
更新于2025-09-09 09:28:46
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Phase diagram and physical properties of (110) oriented Ba(Zr0.08Ti0.92)O3 thin film
摘要： A phenomenological Landau-Devonshire theory is applied to construct the thermodynamic potential of (110) oriented Ba(Zr0.08Ti0.92)O3 thin film and investigate the phase transition, ferroelectric, dielectric and piezoelectric properties. Three ferroelectric phases, such as tetragonal a1 phase, orthorhombic a2c and triclinic γ phase are stable in “misfit strain-temperature” phase diagram. Two triple points are found in the phase diagram and 90° polarization switching can occur directly between tetragonal a1 phase and orthorhombic a2c phase. Complicated phase transitions are induced by the electric field in triclinic γ phase due to the nonlinear coupling terms appeared in the thermodynamic potential. The longitudinal piezoelectric coefficient of (110) oriented Ba (Zr0.08Ti0.92)O3 thin film is smaller than that of (001) oriented film. Moreover, negative longitudinal piezoelectric coefficient can be obtained in triclinic γ phase.
关键词： A. Ferroelectric thin film,D. Piezoelectric property,D. Phase transition
更新于2025-09-09 09:28:46
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Probing the dielectric, piezoelectric and magnetic behavior of CoFe2O4/BNT-BT0.08 composite thin film fabricated by sol-gel and spin-coating methods
摘要： We investigated in this paper a novel bilayer composite obtained by sol-gel and spin coating of the ferroelectric 0.92Na0.5Bi0.5TiO3–0.08BaTiO3 (abbreviated as BNT-BT0.08) and ferromagnetic CoFe2O4 phases, for miniature low-frequency magnetic sensors and piezoelectric sensors. This heterostructure, deposited on Si-Pt substrate (Si-Pt/CoFe2O4/BNT-BT0.08), was characterized using selected method such as: X-ray diffraction, dielectric spectroscopy, piezoelectric force microscopy, SQUID magnetometry, atomic force microscopy/magnetic force microscopy, and advanced methods of transmission electron microscopy. CoFe2O4/BNT-BT0.08 ferromagnetic–piezoelectric thin films show good magnetization, dielectric constant and piezoelectric response. The results of analyses and measurements reveal that this heterostructure can have applications in high-performance magnetoelectric devices at room temperature.
关键词： ferroelectric,spin coating,ferromagnetic,bilayer composite,magnetoelectric devices,sol-gel
更新于2025-09-09 09:28:46
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High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
摘要： The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization ‘‘up’’ and ‘‘down’’ states, the device achieved a high photo-switching on/off ratio (4100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W?1 and a high detectivity of 1.74 × 1012 Jones under the polarization ‘‘up’’ state with an illumination intensity of 21 mW cm?2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
关键词： lead-free,phototransistor,two-dimensional perovskite,ferroelectric dielectrics
更新于2025-09-09 09:28:46
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Epitaxial ferroelectric oxide thin films for optical applications
摘要： Ferroelectrics are non-centrosymmetric crystalline materials that possess a spontaneous polarization that can be switched by an electric field. The electric-field-dependent optical response of these materials makes them important for optical devices, such as modulators or beam deflectors. In the inexorable drive to miniaturization, the concept of integrated thin film optical devices has led to the incorporation of ferroelectric thin films on single-crystal substrates. These structures have appealing electro-optic modulation characteristics, interesting strain-dependent bandgaps and refractive index, as well as promising possibilities for solar harvesting. Here, we review the work on epitaxial ferroelectric (FE) films for optical applications. We first show that FE thin film materials are attractive for integrated electro-optic modulators and then show that epitaxial strain can be used to enhance the FE and optical functionality of films. Next, we describe some of the photovoltaic functionality of FE thin film materials’ systems and conclude the review by highlighting some thin-film devices that exploit the aforementioned optical effects.
关键词： epitaxial strain,electro-optic modulators,thin films,photovoltaic,optical applications,ferroelectric
更新于2025-09-09 09:28:46
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Mechanically induced ferroelectric domain evolution during crack propagation
摘要： Ferroelectric switching in the locality of the crack tip in lead zirconate titanate ceramics leads to a change of both polarization and remanent strain, which affects substantially the stress field and fracture behavior. In particular, for tetragonal crystals the 90? domain reorientation is believed to enhance fracture toughness of the damaged piezoelectric ceramics. Current research models evolution of the domain reorientation processes during crack propagation by a micromechanical model using finite element analysis. The crack growth is numerically simulated by means of electromechanical cohesive elements along the prospective crack path. The study of these unreversible dissipative mechanisms makes the main subject of our numerical investigations. The computed 3D scattering of domain orientations in a mechanically loaded PZT-PIC151 CT-specimen is compared with in-situ X-ray diffraction experiments in synchrotron [1]. It is found that the preferred orientation and intensity of domain distribution in the mechanically loaded specimen depend on the in-plane position and are related to the projected deviatoric stresses/strains. In contrast to simulations with a fixed crack tip [2], during crack propagation the maximal tensile stresses and region of highest intensity of domain reorientation are moved with the crack tip and smeared over a process zone. While the crack length increases, the domain switching belt causes a shielding effect leading to an apparent materials toughening. Such fully coupled, three-dimensional simulation of crack growth resistance curves is the first one in ferroelectrics.
关键词： microstructure,ferroelectric switching,R-curve,fracture mechanisms,transformation toughening
更新于2025-09-09 09:28:46
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Phase structure analysis and pyroelectric energy harvesting performance of Ba(Hf <sub/><i>x</i> </sub> Ti <sub/> 1 <i>-x</i> </sub> )O <sub/>3</sub> ceramics
摘要： Ba(Ti1-xHfx)O3 ceramics were synthesized by a solid-state reaction process. The evolution of the phase structure was identified by XRD spectrum, dielectric spectroscopy and temperature-dependent Raman spectroscopy for the Ba(Ti1-xHfx)O3 ceramics. In addition, pyroelectric energy harvesting properties based on the Olsen cycle were investigated for the first time. A maximum pyroelectric energy harvesting density value of ND=491.30 kJ/m3 (ΔT=120 °C, EH=50 kV/cm) was achieved in the Ba(Hf0.05Ti0.95)O3 ceramic. Compared with those of BT, the values of ND more than doubled in the temperature range from ΔT=60 °C to ΔT=100 °C in the Ba(Hf0.05Ti0.95)O3 ceramic and even increased 3.2 times at ΔT=80 °C near the Curie temperature (TC) of the Ba(Hf0.05Ti0.95)O3 sample. In addition, a larger pyroelectric energy harvesting density value of ND=367.10 kJ/m3 (ΔT=120 °C, EH=50 kV/cm) was acquired in the Ba(Hf0.12Ti0.88)O3 ceramic. Values of ND-BHT5/ND-BT and ND-BHT12/ND-BT were analyzed in the Ba(Ti1-xHfx)O3 ceramics. The optimal pyroelectric properties can be obtained in the vicinity of the ferroelectric to paraelectric phase-transition region.
关键词： Phase transition,Lead-free ceramics,Raman spectra,Ferroelectric materials,Energy harvesting
更新于2025-09-09 09:28:46
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Real-time switching dynamics of ferroelectric tunnel junctions under single-shot voltage pulses
摘要： In ferroelectric memory devices, information is stored within the polarization direction whose reversal usually occurs by the nucleation and propagation of domains. In ultrathin ferroelectrics, ultrafast dynamics may be achieved by nucleation-limited switching, avoiding the inherently speed-limited propagation of domain walls. Here, we investigate polarization reversal dynamics in ultrathin ferroelectric films by transient current measurements. Thanks to the tunnel electroresistance, the start of polarization reversal induces sharp variations of the transmitted current under voltage pulses. These single-shot measurements show extremely fast switching with durations down to 3 ns that is only limited by the current device geometry. While the OFF-to-ON switching shows finite nucleation times that scale with the pulse amplitude, the ON-to-OFF switching speed cannot be detected under such rectangular pulses. Resorting to triangular pulse excitations allows us to detect the dynamics of this switching direction. Both cases can be interpreted by nucleation switching models following Merz’s law.
关键词： transient current measurements,nucleation-limited switching,single-shot measurements,Merz’s law,ferroelectric memory devices,ultrathin ferroelectric films,polarization reversal dynamics,tunnel electroresistance
更新于2025-09-04 15:30:14