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Monolayer-ReS2 field effect transistor using monolayer-graphene as electrodes
摘要： Atomic thinness, excellent transport property and gate-tunable band structure of graphene render it a potential electrode material for assembling ultra thin electronic devices. Here, we present back gate field effect transistor based on exfoliated monolayer (ML) ReS2 as channel semiconductor and exfoliated ML-graphene as drain-source electrodes. The G and 2D peaks of ML-graphene stiffen significantly and their intensity ratio increases as well when the graphene is encapsulated between the SiO2/Si substrate and ReS2. Owing to the excellent electron transport properties of the ML-ReS2 and gate-tunable Fermi-level of the underlying ML-graphene, the transistor exhibits on/off current ratio exceeding 106, mobility of ~1.1 cm2V-1s-1 and subthreshold swing ~740 mV per decade. This work indicates that ML-graphene is an excellent electrode material for fabricating atomically thin ReS2 electronic devices.
关键词： Field effect transistor,Graphene,2D materials,ReS2
更新于2025-09-09 09:28:46
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Ambipolar carrier transport in an optically controllable diarylethene thin film transistor
摘要： Ambipolar carrier transport is demonstrated in an optically controllable organic field-effect transistor, where a benzothienothiophene-substituted diarylethene (BTT-DAE) thin film is employed directly as the transistor channel. A closed-ring isomer, which is produced by ultraviolet (UV) light irradiation, allows the carrier injection of both holes and electrons from source-drain electrodes into the BTT-DAE layer. Moreover, alternate UV or visible (VIS) light irradiation induces marked switching in the drain currents caused by reversible photoisomerization between closed-ring (semiconductor) and open-ring (insulator) isomers. The light-driven on/off ratio, which is defined by the ratio of the drain currents in the sample after UV or VIS light irradiation, reaches 240 for hole transport. The value is comparable to the gate-voltage-induced on/off ratio of 160. Our findings, therefore, have a potential to lead to the construction of new optoelectronic devices such as photoreconfigurable logic circuits and light emitting transistors.
关键词： Ambipolar operation,Optical switching,Organic field-effect transistor,Diarylethene,Photochromism
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Carrier Injection Mechanism of Metal-MoS<inf>2</inf> Ohmic Contact in MoS<inf>2</inf> FETs
摘要： In order to enhance the carrier injection of MoS2 field effect transistors (FETs,) understanding the injection mechanism of metal-MoS2 contacts is essential. In this work, MoS2 (FETs) with Ti and Sc electrodes were fabricated and characterized, respectively. The carrier injection mechanism was studied from the perspective of the tunneling models. With the narrower barrier width, the Sc-MoS2 contact shows a different injection mechanism from that of Ti-MoS2, making Sc a promising improvement as MoS2 FETs electrodes.
关键词： Ohmic contact,MoS2,tunneling,field effect transistor (FET)
更新于2025-09-09 09:28:46
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The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?
摘要： For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices. Alternative approaches, such as employing new materials and introducing new device architectures, appear to be the way to go forward. A currently hot approach is to employ ferroelectric materials for obtaining a positive feedback in the gate control of a switch. This work elaborates on two device architectures based on this approach: the negative-capacitance and the piezoelectric field-effect transistor, i.e., the NC-FET (negative-capacitance field-effect transistor), respectively π-FET. It briefly describes their operation principle and compares those based on earlier reports. For optimal performance, the adopted ferroelectric material in the NC-FET should have a relatively wide polarization-field loop (i.e., ”hard” ferroelectric material). Its optimal remnant polarization depends on the NC-FET architecture, although there is some consensus in having a low value for that (e.g., HZO (Hafnium-Zirconate)). π-FET is the piezoelectric coefficient, hence its polarization-field loop should be as high as possible (e.g., PZT (lead-zirconate-titanate)). In summary, literature reports indicate that the NC-FET shows better performance in terms of subthreshold swing and on-current. However, since its operation principle is based on a relatively large change in polarization the maximum speed, unlike in a π-FET, forms a big issue. Therefore, for future low-power CMOS, a hybrid solution is proposed comprising both device architectures on a chip where hard ferroelectric materials with a high piezocoefficient are used.
关键词： CMOS,negative-capacitance,piezoelectrics,field-effect transistor,MOS devices,power consumption,ferroelectrics
更新于2025-09-09 09:28:46
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Rubbing-Induced Site-Selective Growth (RISS) of MoS2 Device Patterns
摘要： The superior electronic and mechanical properties of 2D-layered transition metal dichalcogenides could be exploited to make a broad range of devices with attractive functionalities. However, the nanofabrication of such layered-material-based devices still needs resist-based lithography and plasma etching processes for patterning layered materials into functional device features. Such patterning processes lead to unavoidable contaminations, to which the transport characteristics of atomically-thin layered materials are very sensitive. More seriously, such lithography-introduced contaminants cannot be safely eliminated by conventional semiconductor cleaning approaches. This challenge seriously retards the manufacturing of large arrays of layered-material-based devices with consistent characteristics. Towards addressing this challenge, we introduce a rubbing-induced site-selective growth method capable of directly generating few-layer MoS2 device patterns without need of any additional patterning processes. This method consists of two critical steps: (i) a damage-free mechanical rubbing process for generating microscale triboelectric charge patterns on a dielectric surface, and (ii) site-selective deposition of MoS2 within rubbing-induced charge patterns. Our microscopy characterizations in combination with finite element analysis indicate that the field magnitude distribution within triboelectric charge patterns determines the morphologies of grown MoS2 patterns. In addition, the MoS2 line patterns produced by the presented method have been implemented for making arrays of working transistors and memristors. These devices exhibit a high yield and a good uniformity in their electronic properties over large areas. The presented method could be further developed into a cost-efficient nanomanufacturing approach for producing functional device patterns based on various layered materials.
关键词： field effect transistor,molybdenum disulfide,nanofabrication,nanomanufacturing,memristor,chemical vapor deposition
更新于2025-09-09 09:28:46
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High-performance interactive analysis of split aptamer and HIV-1 Tat on multiwall carbon nanotube-modified field-effect transistor
摘要： Interaction between split RNA aptamer and the clinically important target, HIV-1 Tat was investigated on a biosensing surface transduced by functionally choreographed multiwall carbon nanotubes (MWCNTs). Acid oxidation was performed to functionalize MWCNTs with carboxyl functional groups. X-ray photoelectron spectroscopy analysis had profound ~2.91% increment in overall oxygen group and ~1% increment was noticed with a specific carboxyl content owing to C=O and O–C=O bonding. The interaction between split RNA aptamer and HIV-1 Tat protein was quantified by electrical measurements with the current signal (Ids) over a gate voltage (Vgs). Initially, 34.4 mV gate voltage shift was observed by the immobilization of aptamer on MWCNT. With aptamer and HIV-1 Tat interaction, the current flow was decreased with the concomitant gate voltage shift of 23.5 mV. The attainment of sensitivity with split aptamer and HIV-1 Tat interaction on the fabricated device was 600 pM. To ensure the genuine interaction of aptamer with HIV-1 Tat, other HIV-1 proteins, Nef and p24 were interacted with aptamer and they displayed the negligible interferences with gate voltage shift of 3.5 mV and 5.7 mV, which shows 4 and 2.5 folds lesser than HIV-1 Tat interaction, respectively.
关键词： Field effect transistor,Multiwall carbon nanotube,Split aptamer,HIV-1 Tat
更新于2025-09-09 09:28:46
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Enabling thin-film transistor technologies and the device metrics that matter
摘要： The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter.
关键词： field-effect transistor,digital revolution,flexible electronics,large-area microelectronics,thin-film transistor,stretchable electronics,flat-panel displays,TFT,transparent electronics
更新于2025-09-04 15:30:14
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Electrical Performances of InN/GaN Tunneling Field-Effect Transistor
摘要： In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling ?eld-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including Ioff, on/off current ratio (Ion/Ioff), subthreshold swing (S), cut-off frequency (ft), maximum oscillating frequency (fmax), and Johnson’s ?gure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed Ioff, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (Lch) of 50 nm demonstrated maximum Ion = 3.5 mA/μm, extremely low Ioff = 1 × 10?21 A/μm, minimum S of 8.8 mV/dec, and the maximum values of ft and fmax are obtained as 100 GHz and 5.5 THz, respectively. In order to con?rm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz · V.
关键词： III-Nitride Heterojunction,Double Gate,Gallium Nitride,Power Device,InN/GaN,Field-Effect Transistor
更新于2025-09-04 15:30:14
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Electrolyte‐Gated n‐Type Transistors Produced from Aqueous Inks of WS <sub/>2</sub> Nanosheets
摘要： Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width-normalized on-conductances of up to 0.27 μS μm?1 and estimated electron mobilities around 0.01 cm2 V?1 s?1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm?3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.
关键词： field-effect transistor,tungsten disulfide,semiconducting nanosheet network,electrolyte-gating,transition-metal dichalcogenide
更新于2025-09-04 15:30:14
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Synthesis and characterization of heterocyclic conjugated polymers containing planar Benzo[c]cinnoline and tetraazapyrene structures for organic field-effect transistor application
摘要： Heterocyclic conjugated polymers BZCTVT and TAPTVT containing tetraazapyrene (TAP) and benzo[c]cinnoline (BZC), respectively, were prepared by using Stille coupling polymerization in microwave reactor. TAP and BZC act as acceptors and thiophene-vinylene-thiophene (TVT) acts as donors. Alkylated thiophene is the linker between acceptor and donor. This is the first time that tetraazapyrene was incorporated into conjugated polymers. The films of BZCTVT and TAPTVT showed maximum absorption wavelength at 522 and 534 nm, respectively. From cyclic voltammertry measurement, TAPTVT and BZCTVT exhibited low LUMO (-3.61 and -3.47 eV) and HOMO (-5.64 and -5.63 eV) energy levels. Even though BZC and TAP were planar structures, BZCTVT and TAPTVT showed large dihedral angles between alkylated thiophene and TVT (10.8-22.6o), and between alkylated thiophene and BZC and TAP (22.2-30.3o) based on their simulated energy-minimized geometry. The bottom-gate, top-contact OFETs based on TAPTVT and BZCTVT exhibited only p-channel behavior with hole mobility of 4.63 × 10-4 and 1.04 × 10-4 cm2 V-1 s-1 and current on/off ratios greater than 104 after thermal annealing. Grazing incidence X-ray diffraction (GIXRD) patterns suggested that thin films of TAPTVT and BZCTVT preferred edge-on orientation.
关键词： heterocyclic conjugated polymers,organic field-effect transistor,tetraazapyrene,Stille coupling polymerization,benzo[c]cinnoline
更新于2025-09-04 15:30:14