[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Thermo-enhanced field electron emission by bandto-ban tunneling from p-Si/ZnO nano-emitters

摘要： We fabricated full array of uniform individual p-Si/ZnO nano-emitters and demonstrated the strong thermo-enhanced field emission. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm2 at 60.6 MV/m) by increasing the temperature from 323 K to 623 K. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nano-junction. This work provides promising cathode for portable x-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Simulation-based optimization of emitter density for randomly distributed field emitters

摘要： To avoid time-consuming simulations of large area field emitters (LAFE) in the future, the optimum emitter density for field emission of randomly distributed emitters is investigated by using a semi-analytical model. The field emission as a function of the nearest neighbored emitter is considered and the distribution of the nearest neighbored emitters is derived using the theory of Poisson point processes. A current density distribution depending on the emitter density is obtained and an predicted optimum calculated.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emitted Current from a Paraboloidal Nano-Emitter Using its Exact Eigenstates and a Three- Dimensional WKB Expression for the Transmission Coefficient

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission Energy Distribution from Planar Integrated Graphene

摘要： We report field emission energy distributions from planar graphene edges. Field effect transistors with integrated gate and drain electrodes and vacuum transport parallel to the substrate surface are fabricated using graphene edge emission sources are prepared from two types of graphene. The emission distributions produced by reduced graphene oxide are roughly symmetric, often time. These contain multiple peaks, and shift over characteristics suggest the emission originates in local edge states. Emission produced by high quality graphene grown on Cu foil more closely resembles emission from a linear density of states, suggesting the emission starts from the delocalized band as well as discrete states.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Experimental Definition of k-power of Pre-Exponential Voltage Factor for LAFE

摘要： In this work we used the possibilities of a comprehensive research methodology for LAFE. To determine the degree of the voltage in the pre-exponential factor, we used the IVC differentiation method and the method of minimization trend residue by variation Fowler-Nordheim coordinates. The method proved to be very sensitive to IVC bends and can serve as a characteristic for the homogeneity of LAFE arrays.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - MEMS ion source for ion mobility spectrometry

摘要： This paper describes a miniature, silicon-glass, electron-impact ion source, in which a field emission cathode is separated from the external atmosphere by a vacuum semi-transparent Si3N4 membrane. High necessary for the proper operation of the ion source is generated on chip by an integrated micropump.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Fabrication of highly conductive carbon nanotube emitters for long-life cold cathode electron beam

摘要： We developed high performance carbon nanotube cold cathode electron source with molybdenum layer for vacuum nanoelectronic devices. With DC-PECVD system for the CNT growth, the high-energy ion radicals in the plasma could etch the Mo layer, and then the etched vapors coated on the CNT emitter. With the patterned Mo layer, a property of CNT emitter were improved as the emission current and the conductivity of emitters

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission from Porous Sponge-Like Graphene

摘要： Herein, a unique porous sponge-like structured graphene has been proposed as field emission emitter. The synthesis process, post treatment and characterizations of the porous sponge-like graphene have been described, and its field emission properties have been researched. Compared to other kind of reported graphene structures, relative low turn-on field could be achieved due to its wide spacing separated surface morphology and vertically stand graphene sheets field emitters.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Silicon Cold Field Emission Electron Sources for Electron Microscopy Inspection Systems

摘要： Next generation electron beam inspection tools will require a high brightness electron source. We have designed, microfabricated and tested arrays of metal coated silicon cold field emitters that have high current density and high reduced brightness, offering a promising alternative to thermal field emitters. One of the main challenges that must be addressed with cold field emitters is achieving stable emission current. Using current pulsing, we have been able to improve the stability of field emission currents and have demonstrated beam currents with less than 1% noise.

[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Photosensitivity of single silicon high-aspect-ratio tips with different doping levels

摘要： Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the lightly doped p-type HAR tips showed a characteristic current saturation at around 10-12 nA, whereas the HAR Si tips with p/n junction showed similar saturation phenomena, however, at much smaller current values starting at ~20- 30 pA. Optical switching under a halogen lamp illumination resulted in at least 2-4 times higher saturation currents and showed a linear dependence between the illumination power and the FE current, for both types of structures. In case of the highly p-doped HAR tips optical current switching effects, i. e. current saturation, were observed at rather low current levels 1-2 pA. Intrinsic HAR Si-tips showed relative unstable field emission behavior without a clear evidence of the photosensitivity.