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The effect of oxygen plasma treatment on the field emission properties of lanthanum hexaboride tip emitter
摘要： Polycrystal lanthanum hexaboride (LaB6) tip field emitter has been prepared using the electrochemical etching technique. The effects of oxygen plasma treatment on its morphology, structure and field emission properties are mainly discussed. The results reveal that the surface morphology of emitters did not change significantly after oxygen plasma treatment. The oxygen plasma treatment does not introduce any new phase into LaB6 emitter, but eliminates surface contaminants, which lead to lower work function. The cathode treated by 2 min shows the best emission performance during the field emission measurement. It obtains 8.2 μA at 2000 V, especially exhibiting strong ability of anti oxygen ion bombardment.
关键词： electrochemical etching,field emitter,lanthanum hexaboride
更新于2025-09-23 15:23:52
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - High performance x-ray source using point-typed CNT field emitter
摘要： The high performance cold cathode x-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode x-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate x-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT x-ray source showed a good resolution of x-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated x-ray images according to the tube voltage and the tube current, respectively.
关键词： point-typed field emitter,carbon nanotube field emitter,metal mesh gate electrode,x-ray image,cold cathode x-ray source,tungsten anode electrode
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission Performance of Boron Nitride Nanotube Emitters According to Vacuum Pressure
摘要： Field emission performance of boron nitride nanotube filtration-transfer fabricated by simple method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-6 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.
关键词： Boron nitride nanotube,field emitter,film emitter,cold cathode
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field emission current investigation of p-type and metallized silicon emitters in the frequency domain
摘要： We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4% and ±0.3%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit.
关键词： field emitter array,current stability,current fluctuation,field emission noise,field emission,silicon tip
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup
摘要： The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-V-characteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10-5 mbar.
关键词： silicon tips,emission current stability,semiconductor field emission,field emitter array
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Recent progress in development of radiation tolerant image sensor with field emitter array
摘要： A prototype image sensor is developed using cadmium telluride-based photodiode and a volcano-structured FEA. Radiation tolerance of each component was tested by irradiating gamma-ray using cobalt-60 source. Gamma-ray tolerance of up to 1.2 MGy was confirmed for both FEA and photodiode.
关键词： Radiation tolerant,Image sensor,Cadmium telluride (CdTe),Field emitter array (FEA)
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Arrays of Si Field Emitter Individually Regulated by Si Nanowires High Breakdown Voltages and Enhanced Performance
摘要： We fabricate Si field emitter arrays (FEAs) with integrated Si nanowire current limiters and investigate a method to enable higher voltage operation, which can potentially increase achievable current densities. In this work, we focus on the dielectric breakdown occurring in the vicinity of the nanopillar. A deeper etch is shown to increase the breakdown voltage but at the expense of poorer field emission characteristics possibly due to the loss of mechanical support or increased surface states.
关键词： field emitter arrays,Silicon,breakdown voltage,current limiters
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Operation of field emitter arrays under high dose rate gamma-ray irradiation
摘要： Robustness of field emitter arrays (FEA) against high dose rate gamma-ray irradiation was confirmed. The current-voltage characteristics of the FEA were investigated in a vacuum vessel developed for in situ measurements under the irradiation. Although slight increase of the gate current was observed under the irradiation, the insulating layer kept the electrical insulation. As a result, FEA showed the almost identical current-voltage characteristics under the 1.3 kGy h-1 gamma-ray irradiation.
关键词： gamma-ray,image sensor,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Gamma-Ray Irradiation Effects of CdS/CdTe Photodiode for Radiation Tolerant FEA Image Sensor
摘要： The influences of gamma irradiation on CdS/CdTe photodiodes were investigated in order to evaluate their potential for applications to the radiation tolerant field emitter array (FEA) image sensor. It was found that the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure more than 2 MGy. Furthermore, I-V characteristics of CdS/CdTe photodiodes under gamma-ray irradiation were investigated. In the CdTe thickness of 6.5 ?m, the change rate of current density increased with increase in the reverse bias voltage. On the other hand, in the case of 2.2 ?m, the change rate of current density was almost constant irrespective of the reverse bias voltage. These results suggest that the increase in depletion layer width affects the change rate of current density.
关键词： image sensor,cadmium telluride,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Comparison of experimental and theoretical methods for determining the emission area of multitip field cathodes
摘要： The experimental and theoretical methods for obtaining the values of the emitting surface are considered. The obtained values of the emission area from the experimental current-voltage characteristic are compared with those derived using theoretical calculations and computer simulation.
关键词： Fowler-Nordheim plots,emission area,current-voltage data analysis,single walled carbon nanotubes,glow patterns,multi-tip field emitter
更新于2025-09-23 15:21:21