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Power Efficiency Figure of Merit for Image Sensors
摘要： A new figure of merit (FoM) is developed with a theory, which enables the comparison of power efficiency of different image sensors based only on the pixel array size, frame rate, and total power consumption. The mathematical foundation of the FoM is provided, enabling the application of FoM to a generic image sensor supporting various read-out configurations. The model assumes a nonlinear relationship between the power consumption and operating frequency of building blocks, and the nonlinear factor is numerically derived based on the analytical modeling of image sensors. The FoM is applied to the studies from 1999 to 2018, which clarifies the trend of improvement as well as visualizes several breakthroughs in the development history.
关键词： modeling,CMOS image sensor (CIS),power efficiency,figure of merit (FoM),power consumption
更新于2025-09-23 15:23:52
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Effect of O <sub/>2</sub> Flow Rate on Properties of Mn–SnO <sub/>2</sub> /Ag/Mn–SnO <sub/>2</sub> Multilayer Film
摘要： Multilayer films with Mn–SnO2 (MTO)/Ag/Mn–SnO2 (MTO) hybrid structure were prepared on a flexible polyethylene terephthalate (PET) substrate using a DC/RF sputtering system at room temperature. The optical, electrical, and structural properties of the thus-synthesized multilayer films were systematically investigated as a function of the O2/(Ar + O2) flow rate. The transmittance of the MTO/Ag/MTO multilayer films at 550 nm increased gradually from 83.1% to 87.9% and the sheet resistance (Rs) of the multilayer films increased from 6.3 to 9.8 Ω/sq upon increasing the O2/(Ar + O2) flow rate. The highest figure of merit (ΦTC) of the MTO/Ag/MTO multilayer film was 45.7 × 10?3 Ω?1 at an O2/(Ar + O2) flow rate of 2.8%. X-ray photoelectron spectra of multilayer films obtained with different O2/(Ar + O2) flow rates showed no noticeable variation.
关键词： Sheet Resistance,Figure of Merit,Transmittance,Gas Mixture Rate,Oxide/Metal/Oxide Structure
更新于2025-09-23 15:23:52
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Low-phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi-path transformer
摘要： This article designs a low-phase noise 8.22 GHz GaN high electron-mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3-path secondary inductor and a single-path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power ?11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is ?120.82 dBc/Hz, the figure of merit of the proposed oscillator is ?192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2.
关键词： phase noise,3-path transformer,figure of merit,Q-factor,8.22 GHz GaN HEMT oscillator
更新于2025-09-23 15:23:52
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Simultaneous optimization of transmittance and resistivity for γ-CuI thin films via an iodination method at mild reaction condition
摘要： In p-type γ-CuI thin films synthesized by the iodination of Cu layers with iodine vapor, a frosted-glass-like appearance with a rough surface is usually obtained, which makes it difficult to apply the γ-CuI films to transparent electronics. This paper proposes an innovative method for the preparation of highly transparent p-type γ-CuI films. A chemical reaction between Cu thin films and iodine vapor, combined with the layer-by-layer process at a temperature between room temperature and 120°C are found to result in highly transparent polycrystalline γ-CuI films. The root-mean-square roughness values of the γ-CuI films prepared by this method are 8.5–21.2 nm, which are smaller than those for the γ- CuI films synthesized by the conventional method. The microstructure and optoelectronic properties of the γ-CuI thin films are sensitive to the temperature of iodine vapor. A high transmittance (80%) of the film obtained at an iodine vapor temperature of 80°C has a low resistivity of 5×10?2 Ω cm and high mobility of 8.7 cm2/Vs. Moreover, a boosted figure of merit is realized due to the simultaneously low resistivity and high transparency: its value jumps from ～488 to ～1630 MΩ-1.
关键词： figure of merit,low resistivity,high transmittance,layer by layer method
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - High-Efficiency Weight-Optimized Fault-Tolerant Modular Multi-Cell Three-Phase GaN Inverter for Next Generation Aerospace Applications
摘要： The aircraft industry demands a significant increase in terms of efficiency and gravimetric power density of power converters for next generation aerospace applications. Between the two minimum targets, i.e. an efficiency > 98 % and a gravimetric power density > 10 kW/kg, the specification concerning the converter weight is the most challenging to fulfill. Since cooling systems and magnetic components dominate the weight breakdown of conventional converter concepts, multi-cell topologies, enabling improved semiconductors performance and reduced filtering requirements, are foreseen as promising solutions for the power electronics on board of More Electric Aircraft. On the other hand, the necessary simultaneous operation of a high number of cells inevitably limits the reliability of multi-cell converters if redundancy is not provided. In this paper, a favorable scaling trend of power density with respect to reliability, aiming to guarantee fault-tolerant operation without affecting the performance figures, is identified in modular multi-cell converters. Thus, a 45 kW weight-optimized modular multi-cell three-phase inverter featuring a redundant power stage is optimized, achieving an efficiency of 99 % and a gravimetric power density of 22.8 kW/kg.
关键词： Multi-Objective Optimization,Figure of Merit of Power Semiconductors,Power Converters Reliability,Modular Multi-Cell Inverter,More Electric Aircraft
更新于2025-09-23 15:23:52
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Narrowband and Full-Angle Refractive Index Sensor Based on a Planar Multilayer Structure
摘要： This work reports a design of a narrowband and full-angle refractive index sensor based on Tamm plasmon resonance (TPR) by introducing a distributed Bragg reflector (DBR) integrated with a non-adjacent metal layer. The analyte flows into the cavity comprising of the DBR and the non-adjacent metal layer. Simulated results show that the incident light can be strongly confined in the specially designed cavity. The sharp reflection dip within the forbidden band of the isolated DBR indicates the excitation of Tamm mode, and the spectral characteristics were monitored upon exposure to various analytes with different refractive indices. The optimally designed system shows the sensitivity (S) and full width at half-maximum (FWHM) can be up to 860 nm/RIU (refractive index unit) and ~2.2 nm with a figure of merit (FOM) of 391. Furthermore, the highly-sensitive characteristic can be sustained in a wide angle range of 0° to almost 90° under both TM- and TE-polarized lights.
关键词： sensitivity,refractive index sensor,Tamm plasmon resonance,figure of merit
更新于2025-09-23 15:22:29
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Different Isolation Processes for Free-Standing GaN p-n Power Diode with Ultra-High Current Injection
摘要： In this article, we report on the fabrication and high performance of power p-n diodes grown on free-standing (FS) GaN substrate. The key technique to enhance the high breakdown voltage and suppress the surface leakage current is the isolation process. The mesa-structure diode is generally formed by utilizing the inductively coupled plasma reactive ion etching (ICP-RIE); however, it always induces high surface damages and thus causes a high leakage current. In this study, we propose a planar structure by employing the oxygen ion implantation to frame the isolation region. By following the crucial process, the fabricated mesa- and planar-type diodes exhibit the turn-on voltages of 3.5 and 3.7 V, specific on-resistance (RONA) of 0.42 and 0.46 mΩ-cm2, and breakdown voltage (VB) of 2640 and 2880 V, respectively. The corresponding Baliga’s figures of merit (BFOM, i.e., VB2/RONA) are 16.6 and 18 GW/cm2, respectively. The BFOM of 18 GW/cm2 is the highest reported value for FS-GaN diode. From the temperature dependent measurements, the planar-type diode also shows the better leakage current and thermal stability than the mesa-type diode.
关键词： leakage current,Baliga’s figure of merit,breakdown voltage,planar diode,implantation,GaN substrate
更新于2025-09-23 15:22:29
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[IEEE 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - Bhimtal, India (2018.2.23-2018.2.24)] 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - A 100 V Lateral Trench Power MOSFET on InGaAs/InP
摘要： In this paper, we present a lateral-trench metal-oxide-semiconductor field-effect transistor (LT-MOSFET) on high mobility InGaAs material. The proposed LT-MOSFET emerged with trench technology consist a gate electrode placed vertically in a trench on the left end of the p-body region. The trench in the drift region introduce a RESURF effect to reduces the electric field and improves the device breakdown voltage. By 2-D numerical simulation, LT-MOSFET exhibits 2.4 times improvement on breakdown voltage with 3.3 times high figure-of-merit in comparison with the conventional-lateral MOSFET (CLMOSFET) for identical cell pitch and gate length.
关键词： figure of merit,breakdown voltage,lateral-trench,InGaAs
更新于2025-09-23 15:21:21
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Computational determination of structural, electronic, optical, thermoelectric and thermodynamic properties of hybrid perovskite CH3CH2NH3GeI3: An emerging material for photovoltaic cell
摘要： Owing to high power conversion efficiency and low-cost, methyl-ammonium lead-based halide (viz. CH3NH3PbI3) Perovskites have been emerging as the innovative candidate in the development of optoelectronic devices. However, the toxic lead in these materials is a major hurdle in its commercialization. Thus, there is an urgent need to replace lead with an appropriate element. Ethyl-ammonium based lead-free hybrid halide perovskites may be an alternative photovoltaic (PV) absorber material with appropriate band gap, high stability and non-toxic properties. Herein, we have investigated structural, electronic, optical, thermoelectric and thermodynamic properties of ethyl-ammonium germanium iodide (CH3CH2NH3GeI3 or EAGeI3) by full-potential augmented plane wave (FP-LAPW) method as implemented in the WIEN2k code within the density functional theory (DFT). In this paper, we have found that EAGeI3 has direct band gap of 1.3 eV and high absorption coefficient greater than 104 cm-1 and indicating its suitability as PV absorber material. We have also calculated thermoelectric coefficients as a function of carrier concentration, chemical potential and temperature. The thermodynamic calculations have been done within the quasi-harmonic approximation. As EAGeI3 has been studied first time for PV applications, the present study may open a new vista for more exhaustive experimental and theoretical investigations in search of non-toxic and eco-friendly PV materials.
关键词： absorption coefficient,Seebeck Coefficient,Ethyl-ammonium based hybrid perovskite,figure of merit,band gap
更新于2025-09-23 15:21:01