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Simulation of perovskite solar cell temperature under reverse and forward bias conditions
摘要： We have developed a model to calculate the temperature of an illuminated perovskite solar cell (PSC) under the forward bias and that of a shaded one under the reverse bias at di?erent ambient conditions. The results show that the dissipated power due to the reverse bias (PRB) should be more than around 6 W to have a higher temperature in the shaded solar cell than that in the illuminated solar cell at the solar irradiance of 1000 W=m2, and this result is almost ambient temperature and wind velocity independent. It is also found that the generated thermal power due to the nonradiative recombination (PRec) becomes signi?cant at the open circuit voltage (Voc) condition, leading to illuminated solar cell temperature (Tcr) higher than that at the short circuit current (Jsc) condition by about 12.7 K, 13.3 K, and 13.9 K at the ambient temperatures of 270 K, 300 K, and 330 K, respectively. In addition, the in?uence of the thickness of the illuminated solar cell on its temperature at the Voc condition is investigated, which reveals that, by increasing the thickness from 100 nm to 300 nm, the solar cell temperature can increase by 20 K.
关键词： temperature,nonradiative recombination,perovskite solar cell,reverse bias,forward bias
更新于2025-09-19 17:13:59
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Room temperature low frequency noise in n <sup>+</sup> -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes
摘要： Low frequency forward current noise as well as the photocurrent noise are studied in InAsSbP/InAs double heterostructure (DH) photodiodes, in the frequency range 1–104 Hz. The photocurrent noise in DH photodiodes is signi?cantly lower than in single heterostructure (SH) photodiodes. The forward current noise in a DH diode exhibiting the 1/f frequency dependence is also much lower than that in SH diodes. However, in some DH diodes, it is the generation-recombination mechanism that provides the dominant contribution to the forward current noise; in this case the noise level is signi?cantly higher. At suf?ciently high forward current densities, the noise decreases with current. The observed generation-recombination noise spectrum cannot be described within the conventional theory.
关键词： InAs photodiodes,low frequency noise,forward bias,photocurrent noise,Mid-IR photodetectors
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 4th Optoelectronics Global Conference (OGC) - Shenzhen, China (2019.9.3-2019.9.6)] 2019 IEEE 4th Optoelectronics Global Conference (OGC) - Quality Assessment of 980 nm GaAs Based Laser Diodes with Use of Low-Frequency Noise Measurements
摘要： Low-frequency noise has always been a fast and non-destructive tool to characterise the performance and quality of materials and electrical devices. In this paper, a non- destructive method of predicting reliability was introduced for 980 nm GaAs based semiconductor laser diodes. Measurement and analysis were carried out for the noise and transport characteristics of forward voltage biases. The results demonstrated a close relationship between LD quality and the characteristic parameters of low-frequency noise such as frequency exponent, noise intensity and amplitude.
关键词： low-frequency noise,frequency exponent,forward bias,laser diodes,GaAs substrate
更新于2025-09-16 10:30:52