[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the C-Band

摘要： We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal–oxide–semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si3N4 730-nm-thick ?lms for Kerr-based nonlinear functions featuring full process compatibility with existing silicon photonics and front-end Si optoelectronics. Experimental evidence shows that 2.1-cm-long nanowires based on such crack-free silicon nitride ?lms are capable of generating a frequency continuum spanning 1515–1575 nm via self-phase modulation. This work paves the way to time-stable power-ef?cient Kerr-based broad-band sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.