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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs
摘要： In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+-GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.
关键词： ion implantation,threshold voltage,epitaxial growth,hysteresis,GaN,trench,MOSFET
更新于2025-09-23 15:22:29
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Uniform Sb <sub/>2</sub> S <sub/>3</sub> optical coatings by chemical spray method
摘要： Antimony sulfide (Sb2S3), an environmentally benign material, has been prepared by various deposition methods for use as a solar absorber due to its direct band gap of ≈1.7 eV and high absorption coefficient in the visible light spectrum (1.8 × 105 cm?1 at 450 nm). Rapid, scalable, economically viable and controllable in-air growth of continuous, uniform, polycrystalline Sb2S3 absorber layers has not yet been accomplished. This could be achieved with chemical spray pyrolysis, a robust chemical method for deposition of thin films. We applied a two-stage process to produce continuous Sb2S3 optical coatings with uniform thickness. First, amorphous Sb2S3 layers, likely forming by 3D Volmer–Weber island growth through a molten phase reaction between SbCl3 and SC(NH2)2, were deposited in air on a glass/ITO/TiO2 substrate by ultrasonic spraying of methanolic Sb/S 1:3 molar ratio solution at 200–210 °C. Second, we produced polycrystalline uniform films of Sb2S3 (Eg 1.8 eV) with a post-deposition thermal treatment of amorphous Sb2S3 layers in vacuum at 170 °C, <4 × 10?6 Torr for 5 minutes. The effects of the deposition temperature, the precursor molar ratio and the thermal treatment temperature on the Sb2S3 layers were investigated using Raman spectroscopy, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and UV–vis–NIR spectroscopy. We demonstrated that Sb2S3 optical coatings with controllable structure, morphology and optical properties can be deposited by ultrasonic spray pyrolysis in air by tuning of the deposition temperature, the Sb/S precursor molar ratio in the spray solution, and the post-deposition treatment temperature.
关键词： vacuum annealing,Volmer–Weber growth,antimony sulfide,thin films,ultrasonic spray
更新于2025-09-23 15:22:29
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Epitaxial Growth of Orthorhombic GaFeO3 Thin Films on SrTiO3 (111) Substrates by Simple Sol-Gel Method
摘要： A Sol-gel method assisted with spin-coating has been successfully used to grow orthorhombic GaFeO3 epitaxial films on SrTiO3 (111) substrates for the first time. The film with Pna21 crystal structure has been grown along the c-axis. The rocking curve of (004) reflection shows that the Full-Width at Half-Maximum (FWHM) value could be determined to be 0.230°, indicating good single crystallinity and high quality. X-ray Φ scan reveals a three-fold symmetry of the substrate and a six-fold symmetry of the film, respectively. The in-plane domains rotate 60° from each other in the film. Uniform film with dense structure, columnar grains with similar grain size was obtained. The thickness of the film was evaluated to be ~170 nm. The roughness value (RMS) measured by AFM was 4.5 nm, revealing a flat film. The in-plane Magnetization versus Magnetic field (M-H) curve at 5 K performs a typical ferri- or ferromagnetic hysteresis loop with a saturated magnetization (Ms) value of 136 emu/cm3. The Curie temperature could be determined to be 174 K. Compared to Pulsed Laser Deposition (PLD), the sol-gel method can prepare large area films with low cost. These new films show promising applications in multiferroic devices.
关键词： GaFeO3 film,magnetic property,sol-gel method,multi-domain structure,epitaxial growth
更新于2025-09-23 15:22:29
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Simultaneously enhanced far-red luminescence and thermal stability in Ca3Al4ZnO10:Mn4+ phosphor via Mg2+ doping for plant growth lighting
摘要： Non-rare-earth-based Ca3Al4ZnO10:Mn4+,Mg2+ (CAZO:Mn4+,Mg2+) phosphors with admirable luminescence performance and great potential as far-red light source for plant growth light-emitting diodes (LEDs) were reported in this paper. The concentration-dependent optical properties of the as-prepared phosphors were investigated in detail. Under ultraviolet-light excitation at 358 nm, the composition-optimized CAZO:0.4%Mn4+,14%Mg2+ phosphor showed an intense broad far-red emission band in the 625-830 nm wavelength range with a maximum at 714 nm, which was due to the 2Eg→4A2g transition of Mn4+ ions. The luminescence intensity of the CAZO:0.4%Mn4+,14%Mg2+ phosphor was about 1.82 times higher than that of CAZO:0.4%Mn4+ phosphor, and the corresponding mechanism for the luminescence enhancement via Mg2+ doping was studied. Amazingly, the internal quantum efficiency of the CAZO:0.4%Mn4+ phosphor was increased from 31 to 60% after co-doping 14 mol% Mg2+. The CAZO:0.4%Mn4+,14%Mg2+ phosphor also showed enhanced thermal stability compared with the CAZO:0.4%Mn4+ counterpart. It was found that, for CAZO:0.4%Mn4+,14%Mg2+ phosphor, the emission intensity at 423 K (150 oC) was about 51% of that at 303 K (30 oC), while the corresponding activation energy was determined to be 0.245 eV.
关键词： thermal stability,plant growth,phytochrome,far-red emissions,LEDs.,Mn4+ ions
更新于2025-09-23 15:22:29
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Driving force of crystallisation based on diffusion in the boundary and the integration layers
摘要： Crystal growth rates are notoriously difficult to predict and even experimental data are often inconsistent. By allowing for mass and energy diffusion through the molecular and thermal layers surrounding a growing crystal and for the heat effect of crystallization, a new model of crystal growth from solution is proposed and applied to crystallization of potassium chloride from aqueous solution. The driving force for crystal growth was calculated using the solubility at the interface temperature in contrast to the conventional one based on bulk temperature. A positive heat effect at the crystal interface as well as the resistances to the mass and energy transfer processes to and from the crystal surface can reduce the conventional driving force for crystal growth by more than 20%.
关键词： Crystal growth rate,Boundary layer,Driving force,Mathematical modelling,Integration (Desolvation) layer
更新于2025-09-23 15:22:29
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Numerical Analysis of Thermal Stress in Semi-Transparent Oxide Crystals Grown by Czochralski and EFG Methods
摘要： Crystal growth of oxides is generally difficult since large curvatures of the growth interface in these systems generate high thermal stress, dislocations and crystal cracking. Three-dimensional numerical modeling is applied to investigate thermal stress distribution in sapphire and langatate La3Ta0.5Ga5.5O14 (LGT) semi-transparent crystals grown by Czochralski (Cz) and Edge-defined Film-fed Growth (EFG) techniques. The analysis of thermal stress distribution in a sapphire ingot grown in a Czochralski furnace shows high von Mises stresses distributed almost symmetrically on large areas in the crystal. Thermal stress computations for piezoelectric langatate crystals grown in a Czochralski configuration show non-symmetrical von Mises distribution with higher stress on one side of the ingot. These numerical results are in agreement with experimental results showing non-symmetrical cracking at the outer surface of the crystal. 3D modeling of multi-die EFG growth of white sapphire ribbons shows that the von Mises stress is almost constant when the number of ribbons is increased from two to ten. Two models are applied to simulate the internal radiative heat transfer in the sapphire crystals: P1 approximation and the Rosseland radiation model. Numerical results show that applying Rosseland formula introduces significant errors in temperature field calculations especially in the case of the EFG configuration.
关键词： computer simulation,Czochralski,sapphire,single crystal growth,stresses
更新于2025-09-23 15:22:29
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The Growth Window of Ferroelectric Epitaxial Hf <sub/>0.5</sub> Zr <sub/>0.5</sub> O <sub/>2</sub> Thin Films
摘要： The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films its formation has been much less investigated. We have grown Hf0.5Zr0.5O2 films by pulsed laser deposition and the growth window (temperature and oxygen pressure during deposition, and film thickness) for epitaxial stabilization of the ferroelectric phase is mapped. The remnant ferroelectric polarization, up to around 24 μC/cm2, depends on the amount of orthorhombic phase and strain, and increases with temperature and pressure for fixed film thickness. Leakage current decreases by increasing thickness and temperature, and particularly by reducing oxygen pressure. The coercive electric field (EC) depends on thickness (t) according the EC - t-2/3 scaling, which is observed by the first time in ferroelectric hafnia, and the scaling extends to thickness below 5 nm. The proven ability to tailor functional properties of high quality epitaxial ferroelectric Hf0.5Zr0.5O2 films paves the way towards progress in understanding their ferroelectric properties and prototyping devices.
关键词： Growth parameters,Pulsed laser deposition,Ferroelectric HfO2,Ferroelectric oxides,Epitaxial stabilization,Oxide thin films
更新于2025-09-23 15:22:29
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Rational Design via Synergistic Combination Leads to an Outstanding Deep-Ultraviolet Birefringent Li2Na2B2O5 Material with Unvalued B2O5 Functional Gene
摘要： Birefringent materials, the key component to modulate the polarization of light, are of great importance in optical communication and the laser industry. Limited by their transparency range, few birefringent materials can be practically used in the deep ultraviolet (DUV, λ < 200 nm) region. Different from the traditional BO3- or B3O6-based DUV birefringent crystals, we propose a new functional gene, the B2O5 unit, for designing birefringent materials. Excitingly, the synergistic combination of Li4B2O5 and Na4B2O5 generates a new compound, Li2Na2B2O5, with enhanced optical properties. The Li2Na2B2O5 crystal with size up to 35 × 15 × 5 mm3 was grown by top seeded solution growth (TSSG) method, and its physicochemical properties were systematically characterized. Li2Na2B2O5 features large birefringence (0.095@532 nm), short DUV cut off edge (181 nm) with high laser-induced damage threshold (LDT, 7.5 GW/cm2 @1064 nm, 10 ns), favorable anisotropic thermal expansion (αa/αb = 5.6) and lowest crystal growth temperature (< 609 oC) among the commercial birefringent crystals. Moreover, the influences of the B2O5 structural configurations on the optical anisotropy were explored. The fascinating experimental results will provide a prominent DUV birefringent crystal and an effective synthesis strategy, which can facilitate the design of DUV birefringent materials.
关键词： B2O5 unit,birefringent materials,crystal growth,deep ultraviolet,optical properties,synergistic combination,Li2Na2B2O5
更新于2025-09-23 15:22:29
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Study of NH3 flow duty-ratio in pulsed-flow epitaxial growth of non-polar a-plane Al0.34Ga0.66N films
摘要： The effects of the modulation in the NH3 flow duty-ratio in a three-way pulsed-flow epitaxial growth process on the structural and optical properties of non-polar a-plane Al0.34Ga0.66N epi-layers were studied intensively. It was revealed that the typical pyramidal defects originated from the anisotropy in growth rate could be evidently reduced with an optimized NH3 flow duty-ratio. In fact, the root-mean-square value determined with atomic force microscope was decreased from 12.8 to 3.1 nm when the NH3 flow duty-ratio was increased from 0 to 0.57. Moreover, the LO-phonon-assisted exciton emission observed in the photoluminescence (PL) spectrum was remarkably suppressed, and the linewidth of the near band edge PL emission peak was decreased by 47%, implying the significantly enhanced optical properties of the non-polar a-plane Al0.34Ga0.66N epi-layer.
关键词： Pulsed-flow epitaxial growth,NH3 flow duty-ratio,Non-polar a-plane AlGaN epi-layers
更新于2025-09-23 15:21:21
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Polarity Control in Growing Highly Ga-doped ZnO Nanowires with Vapor-liquid-solid Process
摘要： Surface behavior modification by forming surface transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of the NWs can be controlled. The polarities of Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities under different growth conditions are studied for exploring a polarity control growth technique. The NWs are formed on Ga- and N-face GaN through the vapor-liquid-solid (VLS) process using Ag nanoparticles as growth catalyst. The NWs grown on templates of different polarities under the Zn- (O-) rich condition are always Zn (O) polar. During the early stage of NW growth, because the lattice sizes among different nucleation islands formed at the triple-phase line are quite different, high-density planar defects are produced when lateral growths from multiple nucleation islands form a GaZnO double-bilayer. In this situation, frequent domain inversions occur and GaZnO polarity is unstable. Under the Zn- (O-) rich condition, because the lateral growth rate of GaZnO in the Zn- (O-) polar structure is higher due to more available dangling bonds, the growth of Zn- (O-) polar structure dominates NW formation such that the NW eventually becomes Zn (O) polar irrespective of the polarity of growth template. Therefore, the polarity of a doped-ZnO NW can be controlled simply by the relative supply rates of Zn and O during VLS growth.
关键词： catalyst,Ga-doped ZnO nanowire,vapor-liquid-solid growth,triple-phase line,polarity
更新于2025-09-23 15:21:21