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Electrodeposition and Photocatalytic Performance of Self-Assembled Tulip Flower/Mulberry-Like CuO Nanostructures
摘要： Copper oxide as a p-type semiconductor has been widely used in the field of catalysis. Monoclinic CuO nanostructures with various shapes have been synthesized on indium tin oxide-coated glass substrates via electrodeposition with annealing at 400°C for 2 h, and the influence of different electrodeposition parameters on their properties investigated. X-ray diffraction analysis and scanning electron microscopy were used to characterize the phase structure and surface morphology, respectively, of the synthesized CuO films, and ultraviolet–visible spectrophotometry was used to study their optical absorption. Moreover, we measured their photocatalytic properties using photodegradation tests under light irradiation with methylene blue as a simulated organic pollutant. The results showed that the light absorbance of the CuO nanostructure was improved in the visible region. The photodegradation rate for methylene blue reached 93% in 210 min. The prepared nanomaterials are promising for use as good photocatalysis in the field of environmental treatment.
关键词： CuO films,photocatalytic properties,Electrodeposition,growth mechanism
更新于2025-09-11 14:15:04
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Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD
摘要： The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained.
关键词： Real time spectroscopic ellipsometry,Microcrystalline silicon,High rate deposition,Optical emission spectrum,Growth mechanism
更新于2025-09-09 09:28:46
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Ellipsometry - Principles and Techniques for Materials Characterization || Spectroscopic Ellipsometry Study of Organic-Inorganic Halide: FAPbIxBr3?x Perovskite Thin Films by Two-Step Method
摘要： Spectroscopic ellipsometry (SE) was used to investigate the role of isopropyl alcohol (IPA) solvent in the synthesis of organic-lead-halide perovskite CH(NH2)2PbIxBr3?x [FAPbIxBr3?x] thin films including the effect of I/Br composition ratio by the two-step reaction of an amorphous (a-)PbIxBr2?x layer and FAIxBr1?x solution diluted in IPA. An optical dispersion model was developed to extract the complex refractive index N (=n + ik), optical transition, and film thickness of FAPbIxBr3?x perovskites by SE analysis at different I/Br composition ratio as a function of immersion time in a solution of FAIxBr1?x diluted in IPA. SE combined with X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM) revealed that Br incorporation into films promoted the densification of FAPbIxBr3?x perovskite network along with increased film thickness and volume fraction of void. IPA promoted film crystallization of a-PbIxBr2?x accompanied by the formation of surface roughness, grain boundaries, and voids, followed by enhanced diffusion of FAIxBr1?x into the grain boundaries/voids in the mesoporous crystallized PbIxBr2?x network. These processes contribute synergistically to the growth of the perovskite structure.
关键词： growth mechanism,two-step reaction,ellipsometry,role of isopropyl alcohol (IPA) solvent,organic-lead-halide perovskite
更新于2025-09-09 09:28:46
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Synthesis and growth mechanism of aluminum nitride nanowires via a chloride-assisted chemical vapor reaction method
摘要： We report a large scaled fabrication of AlN nanowires via a chloride-assisted chemical vapor reaction technique at 1100°C in flowing N2 atmosphere using aluminum powders as starting materials. The as-obtained hexagonal AlN nanowires had the length of hundreds of microns and diameter of 20-100 nanometers, and indicated a single crystalline characteristic. The yield production was significantly increased with ammonium chloride and aluminum chloride addition because of the formation of intermediate gaseous AlCl and HCl. The addition of ammonium chloride and aluminum chloride also promoted the formation of ferric chloride, which served as the catalyst and further facilitated the growth of AlN nanowires. The vapor–liquid–solid and vapor–solid growth mechanism are proposed and discussed in details.
关键词： growth mechanism,ammonium chloride,nanowire,Aluminum nitride,chemical vapor reaction,aluminum chloride
更新于2025-09-09 09:28:46
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Synthesis and characterization of carbon-poor SiC nanowires via vapor-liquid-solid growth mechanism
摘要： Nanowires growth via vapor-liquid-solid mechanism leads to high-quality SiC nanowires. C content is key issue affecting the morphology and composition of SiC nanowires. Here, we report the synthesis and growth mechanism of 3C-SiC nanowires containing reduced amount of C, which are grown on single-crystal Si via pyrolysis of polycarbosilane (PCS) by adjusting pyrolysis temperature and precursor. SiC nanowires have a diameter of 50 nm, while their thickness is 43.75 μm. High-temperature stability of precursors with multiple side-chain groups has an impact on the reaction rate, in result the solid precursor state and pyrolysis temperature at 1350°C are beneficial to the formation of pure carbon-poor SiC nanowires.
关键词： precursor state,vapor-liquid-solid growth mechanism,SiC nanowires,pyrolysis temperature
更新于2025-09-04 15:30:14