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Thermal design for the package of high-power single-emitter laser diodes
摘要： An analytical three-dimensional thermal model is employed to perform the thermal design for the package of high-power single-emitter laser diodes. Thermal design curves for the heat sink and submount are presented in detail, for laser diodes subjected to several convective heat transfer conditions on the bottom of the heat sink. An effective heat spreading angle is proposed to characterize thermal design for the heat sink. A differential heat spreading angle is proposed to clearly manifest heat flow in the packages. Full width and length at 90% energy are introduced to reveal the requirement of submount width and length, respectively. The impact of coefficient of thermal expansion (CTE)-matched sandwiched submount on total heat dissipation is studied. Special discussion is presented for a commercial F-Mount laser diode, and it is found that current heat sink design leads to a 27.4% increase in thermal resistance relative to a free lateral diffusion package.
关键词： Thermal resistance,Heat spreading angle,Submount,Heat sink,Thermal design,High-power laser diodes
更新于2025-09-23 15:19:57
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Transfer-Free Graphene-Like Thin Films on GaN LED Epiwafers Grown by PECVD Using an Ultrathin Pt Catalyst for Transparent Electrode Applications
摘要： In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.
关键词： transparent electrodes,transfer-free,PECVD,LEDs,heat spreading,gallium nitride,graphene
更新于2025-09-12 10:27:22