- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy
摘要： High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties including a current on/off ratio > 106 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins > 92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
关键词： InGaZnO,one-volt operation,high voltage gain and noise margins,full-swing inverters
更新于2025-11-14 17:28:48
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Deep p-ring trench termination: An innovative and cost-effective way to reduce silicon area
摘要： A new type of high voltage termination, namely the 'deep p-ring trench' termination design for high voltage, high power devices is presented and extensively simulated. Termination of such devices consumes a large proportion of the chip size; the proposed design concept not only reduces the termination silicon area required, it also removes the need for an additional mask as is the case of the traditional p+ ring type termination. Furthermore, the presence of the p-ring under and around the bottom of the trench structure reduces the electric field peaks at the corners of the oxide which results in reduced hot carrier injection and improved device reliability.
关键词： Termination,High Voltage,Power Semiconductor Devices
更新于2025-09-23 15:23:52
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Defects and Improvements of Pockels Transducer Voltage Segmentation
摘要： The sensing range and sensitivity of optical voltage transducer are badly limited by the inherent half-wave voltage of the electro-optic crystals and a nonlinear polarization demodulation based on Malus’ law. A multi-segmented structure can meet the requirement of the half-wave voltage but is only suitable for 500 kV and above voltage levels with incident wavelength of 632.8 nm, but it is not suitable for all voltage levels if the incident wavelength is greater than 1330 nm. By the way in the multi-segmented structure its optical path and devices are deviated easily by vibrations and thermal expansion and contraction. In this paper, the multi-segmented structure is improved to be suitable for various high-voltage levels with the wavelength of 632.8 nm or greater, and moreover, a new approach is presented to use MgTiO3 ceramics to enwrap around BGO (Bi4Ge3O12) crystal to reduce the integral voltage errors from 0.260% to 0.012%.
关键词： high voltage measurement,Optical voltage transducer,multi-segmented structure,integral voltage error
更新于2025-09-23 15:22:29
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High Bandwidth Non-Resonant High Voltage Generator for X-Ray Systems
摘要： High-voltage supplies for medical X-ray systems require up to 150 kV DC at up to 100 kW to supply the tube. The challenge for the power supply however is not only to deal with the high voltage and high power demand, but also to provide short voltage rise- and fall times in the range of 100μs. A coupled interleaved circuit variant of a single active bridge concept, the coupled interleaved single active bridge converter, is demonstrated in this work providing very fast output voltage control due to its non-resonant structure. The conduction modes of the circuit are analysed in detail and compared to the uncoupled interleaved single active bridge approach, demonstrating the advantages of low inverter RMS current, zero voltage switching (or at least zero current switching) over the full operating range with constant switching frequency. Analytic expressions for the output current-duty cycle relationship are provided. Experiments on a 60 kW (low voltage equivalent) prototype show that rise times as low as five switching cycles are possible, allowing to reach the target of 100μs rise time using a switching frequency of only 50 kHz.
关键词： DC-DC power conversion,high bandwidth,high voltage generator,X-ray generator
更新于2025-09-23 15:22:29
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High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si δ -Doped AlGaN/GaN:C HEMTs
摘要： This paper reports the AlGaN/GaN/Si δ-doped AlGaN/GaN:C HEMT device on silicon with high channel conductivity, high breakdown ?eld (E-?eld) strength, and low current collapse by using the Si-doped AlGaN back barriers. The Si δ-doped AlGaN back barrier was used to compensate for the reduction of channel conductivity as a result of a carbon-doped semiinsulating GaN buffer layer. The maximum drain current increases from 412 to 720 mA/mm, and peak extrinsic transconductance is improved from 103 to 210 mS/mm. Due to the reduction of electric ?eld between the gate and drain along the GaN channel by inserting the Si δ-doped AlGaN back barrier layer, it can effectively suppress the capture of electrons in channel by carbon-induced accepted traps in the GaN:C buffer. Combined with the high conductivity of Si δ-doped AlGaN back barrier and high resistance of GaN:C buffer, the device showed the high breakdown E-?eld strength and the low speci?c on-resistance. Our proposed device is observed to hold a gate–drain voltage of 769 V at 10 μA/mm (7-μm gate–drain spacing) and 0.53 mΩ · cm2 and the gate-to-drain electric ?eld corresponds to 1.1 MV/cm.
关键词： high channel conductivity,high-voltage device,Si δ-doped AlGaN back barrier,GaN,Current collapse (CC)
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Shenzhen, China (2018.11.4-2018.11.7)] 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Design and Research of High Voltage Power Conversion System for Space Solar Power Station
摘要： To meet the needs of its characteristics, this paper studies the space high voltage power conversion system’s circuit topology and the optimization design of its structure. In the first part, the Common space solar power station power management and distribution method is analyzed. And based on that, a new hybrid power system structure is presented, in which a power transmission bus-bar structure suited for space solar arrays is constructed and the modular multi-converter with serial-parallel combination control strategy is proposed. By applying this new structure, the high transformation ratio in the solar cell arrays and sub-arrays, the low power loss, the large power conversion with high power density and the high efficiency can all be achieved. In the second part, a new soft-switched isolated full-bridge converter is also proposed. And research is made based on the new converter, which includes the study on the transformer modular magnetic integration, the space temperature field and the thermal design. Finally, the simulation and experiment prove the correctness of the theoretical analysis.
关键词： high voltage transformation,IPOS combination,current sharing control,space solar power station
更新于2025-09-23 15:22:29
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Impact Analysis of DSSC on Distance Relay Performance under Fault Conditions
摘要： This paper demonstrates the impact analysis of the Distributed Static Series Compensator (DSSC), on the performance of distance relay protection of high voltage transmission lines. The concept of DSSC model with its control circuit and distance relay are described. A five bus test system with DSSC and distance relay is designed with the help of MATLAB/SIMULINK software. The impact of DSSC on distance protection relay for different fault conditions and various fault locations is analyzed. The results of simulation show that the connection of DSSC in the transmission system changes the transmission line impedance greatly as estimated by the distance relay to be less or greater than the actual impedance in fault conditions. Hence, the distance relay performance changes, either over reaches or under reaches.
关键词： FACTS Controller,Distributed FACTS Devices,Distributed Static Series Compensator,High Voltage Transmission Line,Distance Relay
更新于2025-09-23 15:22:29
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Statistical classification of contamination in glass insulators by reading its spectrum
摘要： This paper proposes to use a statistical approach for classifying the contamination level of insulators used in high voltage transmission lines. This studied case considers the voltage applied on glass insulators used in a chain of six elements of a 69 kV power line. When submitted to high voltage, the insulators radiate radio frequency signals up to frequencies of some GHz. In this frequency range the signal can be detected using portable antennas, and then be applied to post processing. These received spectra are analyzed by statistical methods, mean and standard deviation, and the cross relation between them is used to classify the pollution level in insulators. To reduce complexity and cost a simple data processing using the mean and the standard deviation are used. Two types of glass insulators are considered: clean or polluted, and to cover the entire frequency range from 30 MHz to 1 GHz two types of antennas were needed. The results obtained with the mean and the standard deviation show that the first 100 MHz bandwidth can be used for statistical of the insulator pollution level.
关键词： radio frequency spectrum,mean value,High voltage transmission lines insulators,statistical classification methods,standard deviation
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Ultrasonics Symposium (IUS) - Kobe, Japan (2018.10.22-2018.10.25)] 2018 IEEE International Ultrasonics Symposium (IUS) - High Voltage Excitation and Nonlinear Transmission of a 16 MHz AlN-Based Piezoelectric Micro-Machined Ultrasonic Transducer
摘要： This paper reports the performance of a 25 μm AlGaN-based micro-piezoelectric transducer (MPT) under high voltage excitation and determination. The proposed MPT array consists of 23×28 elements fabricated on a silicon-on-insulator (SOI) substrate with 1 μm AlGaN thin film on 24 μm silicon membrane. With all the array elements electrically connected together, the electric impedance of the MPT was 11.5–7.22 kΩ at 24.7 MHz resonance frequency in air and 3.21–7.24 kΩ at 22.8 MHz when the device was water charged. The laser Doppler vibrometer (LDV) measurements showed that the transmission efficiency and the bandwidth for free vibration were 1.6 nm/V and 1.0%, respectively. The resonance modes were specifically associated with the material parameters and the initial state of the device. Moreover, nonlinear behavior was observed when increasing the input mean power exceeded 24 mW. This strategy is potentially applied to CMOS-compatible high-resolution ultrasound imaging.
关键词： AlGaN,CMOS-compatible,Ultrasound,High voltage,Micro-piezoelectric transducer
更新于2025-09-23 15:22:29
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A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator
摘要： Nanosecond pulse discharge plasma has many prospects in industrial applications, and high voltage repetitive nanosecond pulse generators with compact design and light weight have become one of the key issues limiting its development in some applications. This paper presents a high voltage series-connected SiC MOSFETs module which can be served as the main switch in a repetitive high voltage nanosecond pulse generator. This kind of series-connected MOSFETs module with only single external gate driver requiring very few components is very suitable for compact assembly. By analyzing the working principle, three topologies of series-connected MOSFETs module are proposed. The switching behaviors of the three different topologies with four SiC MOSFETs series-connected are compared experimentally. The variation of switching characteristics of series-connection SiC MOSFETs module with different numbers of devices are investigated. The layout is also optimized to shorten pulse front time and improve output pulse quality. Furthermore, a 10 kV SiC MOSFETs module with a turn-on transition time ~10 ns is developed. The double pulse test result demonstrates excellent switching performances. Finally, a compact and high voltage pulse generator composed of three 10 kV SiC MOSFETs module is tailored, with a typical rise time ~40 ns and peak voltage of ~30 kV.
关键词： high voltage nanosecond pulse generator,series-connection,SiC MOSFET
更新于2025-09-23 15:22:29