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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - 40Gb/s Carrier Depletion-Based Silicon Micro-Ring Modulators
摘要: A high-speed silicon microring modulator based on a titanium-doped silicon rib waveguide has been demonstrated. Small footprint of 26.5 μm × 26.5 μm with low driving voltage of 1.5 V and 22 dB extinction ratio at 20 Gb/s modulation has been achieved. The high-speed performance is attributed to the low capacitance of the device and the efficient plasma dispersion effect in silicon. Moreover, the modulator exhibits a low propagation loss of 2.5 dB/cm and a high modulation efficiency of 1.5 V·cm. The device is fabricated on a silicon-on-insulator (SOI) wafer with a 220 nm top silicon layer and a 2 μm buried oxide layer. The rib waveguide has a width of 500 nm and a height of 220 nm with a slab height of 150 nm. The titanium doping concentration is 1×10^20 cm^{-3}. The modulator is characterized using a lightwave component analyzer and a high-speed photodetector. The 3-dB bandwidth is measured to be 20 GHz. The eye diagrams at 20 Gb/s show clear eye opening with low jitter. The results indicate that the titanium-doped silicon microring modulator is promising for high-speed optical interconnects.
关键词: high-speed modulation,titanium doping,optical interconnects,silicon photonics,microring modulator
更新于2025-09-23 15:23:52
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Laser Characteristics for VCSELs for 77 K and 4 K Optical Data Applications
摘要: Small-sized vertical-cavity surface-emitting laser (VCSEL) offer the possibility of very low power consumption along with high reliability for cryogenic data transfer. Cryogenic data transfer has applications in focal plane array cameras operating at 77 K, and at the lower temperature of 4 K for data extraction from superconducting circuits. A theoretical analysis is presented for 77 K and 4 K operation based on small cavity, oxide-free VCSEL sizes of 2 to 6 μm, that have been shown to operate efficiently at room temperature. Temperature dependent operation for optimally-designed VCSELs are studied by calculating the response of the laser at 77 K and 4 K to estimate their bias conditions needed to reach modulation speed for cryogenic optical links. The temperature influence is to decrease threshold for reducing temperature, and to increase differential gain for reducing temperature. The two effects predict very low bias currents for small cavity VCSELs to reach needed data speed for cryogenic optical data links. Changing the number of top-mirror pairs has also been studied to determine how cavity design impacts speed and bit energy. Our design and performance predictions paves the way for realizing highly efficient, ultra-small VCSEL arrays with applications in optical interconnects.
关键词: Vertical cavity surface emitting lasers,Cryogenics,semiconductor devices,laser physics,high speed modulation,optical data transmission
更新于2025-09-19 17:13:59
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Regimes of bandwidth enhancement in coupled-cavity semiconductor laser using photon–photon resonance
摘要: In the last decade, different solutions were proposed to boost the transmission bitrate of semiconductor lasers. Here, we focus on applying optical feedback to a semiconductor laser from an external cavity in order to induce enhancement of the modulation bandwidth up to 50 GHz as well as resonant modulation (RM) around frequencies approaching 60 GHz. High-speed modulation up to 90 Gbps under none-return to zero operation and a 45 Gbaud using pulse amplitude modulation-4 signals are predicted. Both types of improving the modulation performance of the laser are attributed to the photon–photon resonance (PPR) effect. The regimes of the external power reflectivity that correspond to both types of modulation response are specified. Comprehensive simulations are introduced to correlate the PPR frequency to the RM frequencies of the non-modulated coupled-cavity laser. Dependencies of the enhanced BW and PPR frequency on the cavity length and bias current are elucidated.
关键词: optical feedback,photon–photon resonance,modulation bandwidth,high-speed modulation,semiconductor lasers
更新于2025-09-11 14:15:04