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Perovskite solar cells based on polyaniline derivatives as hole transport materials
摘要： Perovskite solar cells (PSC) have been extensively studied over the past few years in both academia and industry. Despite their appeal as a low cost and ease processing PV-technology, PSC still rely on materials that are expensive, turning the large-scale production more challenging. In this work, polyaniline (PAni) and its derivative poly(o-methoxyaniline) are employed as hole transport material (HTM) in PSC, replacing the most explored HTM, spiro-OMeTAD. These very well established conducting polymers are doped with 4-dodecylbenzenesulfonic acid (DBSA) to enhance their conductivity. The correlation between the performance of the solar cells using doped and undoped conducting polymers and different metallic contacts are also evaluated. The best power conversion efficiency was 10.05% using doped PAni-DBSA with Au as contact, which is similar to the performance exhibited by our standard device using Spiro-OMeTAD as HTM.
关键词： hole transport material,perovskite solar cells,polyaniline
更新于2025-11-19 16:56:42
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Preparation of hierarchical flower-like nickel sulfide as hole transporting material for organic solar cells via a one-step solvothermal method
摘要： In this work, nickel sulfide (NiS) with a mesoporous network was prepared through a simple solvothermal approach. The influences of various contents of the sulfur source on the morphological changes were examined. Finally, the resultant NiS doped with various contents of sulfur were used as hole-transport layers (HTLs) for the application to organic solar cells (OSCs). Based on our knowledge of the implementation of OSCs, NiS-based HTLs are used for the first time in this paper. The OSCs developed with NiS_2.0 (NiS doped with 2.0 g of thioacetamide (sulfur source)) HTL showed a higher PCE response, at 2.28% than those fabricated with NiS_1.0 (NiS doped with 1.0 g of thioacetamide), NiS_1.5, (NiS doped with 1.5 g of thioacetamide), and NiS_2.5 (NiS doped with 2.5 g of thioacetamide), which only showed 1.38%, 1.88%, and 1.96%, respectively. Besides this improved photovoltaic response, it also demonstrated a superior reproducibility with a high degree of control over the environmental stability, i.e., 360 h, as compared to the bare PEDOT:PSS HTL-based OSCs, which showed just 240 h.
关键词： Stability,Reproducibility,Synthesis,Hole transport layer,Organic solar cells,Hierarchical flower-like nickel sulfide
更新于2025-11-14 17:04:02
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Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices
摘要： One source of instability in perovskite solar cells (PSCs) is interfacial defects, particularly those that exist between the perovskite and the hole transport layer (HTL). We demonstrate that thermally evaporated dopant-free tetracene (120 nm) on top of the perovskite layer, capped with a lithium-doped Spiro-OMeTAD layer (200 nm) and top gold electrode, offers an excellent hole-extracting stack with minimal interfacial defect levels. For a perovskite layer interfaced between these graded HTLs and a mesoporous TiO2 electron-extracting layer, its photoluminescence yield reaches 15% compared to 5% for the perovskite layer interfaced between TiO2 and Spiro-OMeTAD alone. For PSCs with graded HTL structure, we demonstrate efficiency of up to 21.6% and an extended power output of over 550 hours of continuous illumination at AM1.5G, retaining more than 90% of the initial performance and thus validating our approach. Our findings represent a breakthrough in the construction of stable PSCs with minimized nonradiative losses.
关键词： perovskite solar cells,stability,charge extraction,photoluminescence,hole transport layers,graded doping
更新于2025-11-14 15:25:21
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Tin( <scp>ii</scp> ) thiocyanate Sn(NCS) <sub/>2</sub> – a wide band gap coordination polymer semiconductor with a 2D structure
摘要： Semiconductors based on tin(II) show promising hole-transport characteristics due to the 5s electrons that form the valence band. In this paper, we report the synthesis and comprehensive characterization of tin(II) thiocyanate [Sn(NCS)2] and identify it as a novel transparent coordination polymer semiconductor. The single crystal X-ray analysis reveals covalently-bonded 1D polymeric chains that form a 2D structure through Sn–S tetrel bonds. Density functional theory calculations also confirm the importance of the van der Waals interactions between the 2D sheets. Furthermore, we show that the s character of Sn(II) is maintained at the top of the valence band, resulting in dispersed states with a small hole effective mass. The coordination with NCS ligands also leads to a conduction band which is high in energy, giving rise to a wide band gap and excellent transparency in the visible spectrum. This is the first report on the electronic properties of Sn(NCS)2 which highlights the potential of developing new transparent semiconductors based on thiocyanate coordination polymers.
关键词： hole transport,band gap,tin(II) thiocyanate,transparent,semiconductor,coordination polymer
更新于2025-10-22 19:40:53
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Evidence and Influence of Copper Vacancies in p-Type CuGaO <sub/>2</sub> Mesoporous Films
摘要： Delafossite CuGaO2 nanocrystals were hydrothermally synthesized and characterized spectroscopically and electrochemically as mesoporous thin films. The nanocrystals demonstrate a preferred orientation within the film structure, as shown by enhancement of the (00l) peaks via two-dimensional powder X-ray diffraction. Annealing conditions of low and high temperature (i.e., 100?300 °C), with oxygen and/or argon atmospheres, were investigated, and the resulting effect on the thin film electrochemistry was measured. Cyclic voltammetry showed an increase in non-faradaic current with higher annealing temperatures and demonstrated a quasi-reversible redox feature (E1/2 = 0.1 V vs Fc+1/0). This feature is assigned to a CuII/CuI redox couple associated with surface defects. X-ray photoelectron and energy dispersive spectroscopies provide evidence for CuII surface defects and copper vacancies. Electrochemical impedance spectroscopy revealed that CuGaO2 films were highly conductive with σ ～ 10?5 Ω?1 cm?1, consistent with a large density of hole carriers induced by copper vacancies. The significance of synthesis, film preparation, and annealing conditions on the presence of surface defects and large hole densities is discussed. The prevalence of such defects in delafossite CuGaO2 is expected to have a large impact on the use of this material as a hole transport layer in solar cell architectures.
关键词： p-type metal oxide,delafossite,hole transport,heterojunction solar cell,CuGaO2
更新于2025-09-23 15:23:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Room Temperature Processed Transparent Cu-Zn-S Nanocomposites as Hole Transport Materials in CdTe Photovoltaics
摘要： Here, we report room temperature processed Cu-Zn-S ternary thin films fabricated using SILAR method as a back-contact hole transport layer in cadmium telluride (CdTe) solar cells. These Cu-Zn-S films are transparent to visible region with compact grains, and high conductivity. X-ray diffraction (XRD) measurements shows the crystalline nature of the as-deposited Cu-Zn-S films. The Cu-Zn-S nanocomposite as a back contact buffer layer in CdTe devices improves the device performance to 12.7% (average 12.4%) from 10.4% (average 9.8%) compared to a Au only back contact and is comparable to Cu/Au back contact (thermally evaporated). The temperature dependence current voltage characteristics shows the reduced back barrier height compared to Au only and Cu/Au back contact.
关键词： SILAR,Cu-Zn-S,back contact,hole transport layer (HTL),solar cells
更新于2025-09-23 15:21:01
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Hydroxymethyl Functionalized PEDOT-MeOH:PSS for Perovskite Solar Cells
摘要： Poly(hydroxymethylated-3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT-MeOH:PSS) conducting polymers are synthesized and incorporated in inverted structured perovskite solar cells (PVSCs) as hole transport materials. The highest occupied molecular orbital of PEDOT-MeOH is lowered by adding a hydroxymethyl (-MeOH) functional group to ethylenedioxythiophene (EDOT), and thus the work function of PEDOT-MeOH:PSS is increased. Additionally, hydrogen bonding can be formed among EDOT-MeOH monomers and between EDOT-MeOH monomers and sulfate groups on PSS, which promote PEDOT-MeOH chain growth and enhance PSS doping. The electronic, microstructural, and surface morphological properties of PEDOT-MeOH:PSS are modified by changing the amount of PSS and ferric oxidizing agent used in the polymerization and by adding ethylene glycol in the post-synthesis treatment. The PVSCs based on ethylene glycol treated PEDOT-MeOH:PSS overperform the PVSCs based on commercial PEDOT:PSS because of the better energetic alignment and the enhancement of PEDOT-MeOH:PSS electrical conductivity. This work opens the way to develop new hole transport materials for highly efficient inverted PVSCs.
关键词： hole transport material,perovskite,solar cell,electrical conductivity,work function
更新于2025-09-23 15:21:01
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Anthradithiophene based hole-transport material for efficient and stable perovskite solar cells
摘要： A novel hole-transport material (HTM) based on an anthradithiophene central bridge named BTPA-7 is developed. In comparison to spiro-OMeTAD (2,2’,7,7’-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9’-spirobifluorene), the synthetic steps of BTPA-7 are greatly reduced from 6 to 3 and the synthetic cost of BTPA-7 is nearly a half that of spiro-OMeTAD. Moreover, BTPA-7 exhibits a relatively lower conductivity but higher hole mobility and higher glass transition temperature (Tg) than spiro-OMeTAD. Compared with the photovolatic performance for spiro-OMeTAD, FA0.85MA0.15PbI3 and MAPbI3 PSC devices based on BTPA-7 exhibit slightly lower PCEs with the values of 17.58% (18.88% for spiro-OMeTAD) and 11.90% (13.25% for spiro-OMeTAD), respectively. Nevertheless, a dramatically higher Jsc of PSC based on BTPA-7 is achieved, which arises from the higher hole mobility of BTPA-7. In addition, the relatively hydrophobic character of BTPA-7 eventually enhances the PSC device stability. Lower cost, higher hole mobility, higher Tg, satisfactory photovoltaic performance, and superior device stability of BTPA-7 can be utilized as a substitute for spiro-OMeTAD in PSCs.
关键词： Stability,Anthradithiophene,Hole-transport material,Synthetic cost
更新于2025-09-23 15:21:01
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Enhanced stability and efficiency in inverted perovskite solar cells through graphene doping of PEDOT:PSS hole transport layer
摘要： Poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) plays a relevant role in the device performance as hole extraction layer (HTL) of inverted perovskite solar cells. Here, we show a simple low-temperature spin coating method for obtaining homogenous graphene-doped thin films of PEDOT:PSS with improved electrical conductivity without decreasing optical transmittance. Moreover, the crystallinity and stability in ambient conditions of the perovskite grown on it are enhanced. The hydrophobic character of graphene probably blocks undesirable reactions hampering degradation. By impedance spectroscopy it is demonstrated better charge extraction and reduction of recombination mechanisms at the doped-HTL/perovskite interface, resulting in improved photovoltaic parameters of the solar cell and greater stability at room operation conditions thus providing a simple and cost-effective method of preparing solar cells based on hybrid perovskites.
关键词： perovskite solar cell,PEDOT:PSS,doping,graphene,hole transport layer,impedance spectroscopy
更新于2025-09-23 15:21:01
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Structural and Electrical Investigation of Cobalt-Doped NiOx/Perovskite Interface for Efficient Inverted Solar Cells
摘要： Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the e?ciency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best e?ciency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion e?ciency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx ?lm, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the bene?cial e?ects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a signi?cant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two di?erent points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
关键词： hole transport material,inverted planar perovskite solar cell,perovskite morphology,Co-doped NiOx,electrical conductivity
更新于2025-09-23 15:21:01