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Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors
摘要： High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3) and polyethylenimine (PEI)-doped In2O3 (In2O3:x% PEI, x = 0.5–4.0 wt%) as the channel layer. A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2O3 and PEI-In2O3 via work function tuning of the In2O3:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2O3) to 4.0 wt%, respectively. The resulting devices achieve electron mobilities greater than 10 cm2 V?1 s?1 on a 300 nm SiO2 gate dielectric. Importantly, these metrics exceed those of the devices composed of the pristine In2O3 materials, which achieve a maximum mobility of ≈4 cm2 V?1 s?1. Furthermore, a mobility as high as 30 cm2 V?1 s?1 is achieved on a high-k ZrO2 dielectric in the homojunction devices. This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.
关键词： PEI-doped In2O3,oxide electronics,homojunctions,2D electron gases
更新于2025-09-10 09:29:36
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Solution Processing for Lateral Transition Metal Dichalcogenides Homojunction from Polymorphic Crystal
摘要： Homojunctions comprised of transition metal dichalcogenides (TMD) polymorphs are attractive building blocks for next-generation two-dimensional (2D) electronic circuitry. However, the synthesis of such homojunctions, which usually involves elaborate manipulation at nanoscale, still remains a great challenge. Herein, we demonstrated a solution-processing strategy to successfully harvest lateral semiconductor-metal homojunctions with high yield. Specially, through precisely controlled lithiation process, precursors of polymorphic crystal arranged with 1T-2H domains were successfully achieved. A programmed exfoliation procedure was further employed to orderly laminate each phase in the polymorphic crystal, thus leading to 1T-2H TMD homojunction monolayers with size up to tens of micrometers. Moreover, the atomically sharp boundaries and superior band alignment improved the device based on the semiconductor-metal homojunction with 50% decrease of electric field strength required in the derivation of state transition. We anticipate that solution processing based on programmed exfoliation would be a powerful tool to produce new configurations of 2D nanomaterials.
关键词： homojunctions,polymorphic crystal,transition metal dichalcogenides,programmed exfoliation,solution processing
更新于2025-09-04 15:30:14