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Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films
摘要： Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced “island-like” micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/mm with emission currents in the order of 10?6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/mm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters.
关键词： excimer laser crystallization,electron field emission,metal induced crystallization,micro-nano emitters,Hydrogenated amorphous silicon
更新于2025-09-16 10:30:52
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Determining a Line Strength in the ν <sub/>3</sub> Band of the Silyl Radical Using Quantum Cascade Laser Absorption Spectroscopy
摘要： Silane (SiH4) plasmas are widely used for the deposition of hydrogenated amorphous silicon (a-Si:H) films. Nevertheless, the chemical processes governing film deposition are still incompletely understood. Moreover, there is still no general method available to determine the absolute concentration of the silyl radical (SiH3), which is the accepted chemical precursor of a-Si:H films. In this study, a 10% silane in helium RF plasma was spectroscopically investigated between 2085 and 2175 cm?1 using an external cavity quantum cascade laser (EC-QCL) based spectrometer. This led to the identification of 4 distinct species from their absorption features: SiH4, disilane (Si2H6), SiH3, and an unassigned short-lived species. Furthermore, 17 absorption features of SiH3 were identified and unambiguously assigned. Fast spectral scanning of selected absorption features belonging to the four species in a 10 Hz pulsed RF plasma enabled the measurement and interpretation of their temporal behavior in terms of plausible chemical reactions involving silicon containing species. By quantitatively measuring the decay of the SiH3 a ← a pP4 (5) transition at 2151.3207 cm?1 after the discharge was stopped, its line strength (S) was determined to be (7.5 ± 5.5) × 10?20 cm2 cm?1 mol?1.
关键词： quantum cascade laser absorption spectroscopy,hydrogenated amorphous silicon,Silane plasmas,line strength,silyl radical
更新于2025-09-12 10:27:22
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Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors
摘要： This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 ?C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.
关键词： optical sensor,Hydrogenated amorphous silicon thin-film transistor,long-term reliability
更新于2025-09-11 14:15:04
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Nonlinear process-induced spectral changes in hydrogenated amorphous silicon core optical fibre
摘要： In this paper, the spectral properties of temporal double pulses centred at the same central wavelength and two different central wavelengths are numerically presented based on hydrogenated amorphous silicon core optical fibre. In order to characterise the output spectra of double pulses, the group velocity dispersion and various nonlinear processes including self-phase modulation, cross-phase modulation, two-photon absorption, free carrier absorption and free carrier dispersion are considered in the theoretical model. Numerical results show that, under fixed fibre length condition, the widths of the outcome spectra are strongly dependent on the delay times, peak powers and initial chirps of input double pulses, i.e. widths of the output spectra are proportional to the launched peak powers, and the delay times control the separation between two pulses, resulting in the spectral change within a proper delay time, and the spectral widths are compressed or extended by judiciously adjusting the initial chirps imposed on the input pulses.
关键词： nonlinear processes,optical spectrum,optical fibre,Nonlinear optics,hydrogenated amorphous silicon
更新于2025-09-10 09:29:36
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Dense restructuring of amorphous silicon network induced by non-bonded hydrogen
摘要： We con?rmed the presence of non-bonded hydrogens (NBHs) in hydrogenated amorphous silicon (a-Si:H) ?lms, using a combination of multiple techniques (Rutherford backscattering spectrometry/hydrogen forward scattering, Fourier-transform infrared spectroscopy-attenuated total re?ection, and thermal desorption spectrometry). The hydrogen e?usion pro?le of an a-Si:H ?lm with large amounts of NBHs was analyzed in detail. We report the e?ect of NBHs on band structure and electrical conductivity, and we present additional considerations for previous data on number density of silicon, optical bandgap, and vacancy size distribution [J. Non-Cryst. Solids 447, 207 (2016)]. The e?ect of NBHs on the a-Si network is explained by the “dense restructuring model”.
关键词： thermal desorption spectrometry,Rutherford backscattering spectrometry,hydrogenated amorphous silicon,non-bonded hydrogens,dense restructuring model,Fourier-transform infrared spectroscopy
更新于2025-09-09 09:28:46