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High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications
摘要： The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2 to 3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 10^15 cm^-3, a rectification ratio of 3 × 10^8 and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy-harvesting.
关键词： breakdown voltage,electrodeposition,zinc oxide,critical electric field,solution-processed,Schottky diode,power diode,ideality factor
更新于2025-09-23 15:23:52
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[IEEE 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Stockholm, Sweden (2018.9.26-2018.9.28)] 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Structural analysis and modelling of packaged light emitting devices by thermal transient measurements at multiple boundaries
摘要： The paper presents a comprehensive methodology for modeling the electrical, optical, and thermal domains of high-power LEDs, focusing on the XPE2 type from Cree. It introduces optimization algorithms (OPT1 and OPT2) to extract parameters such as series resistance (RS), ideality factor (m), and saturation current (I0) from forward voltage (VF) measurements. A quadratic model for radiant voltage (Vrad) is developed to describe the optical output, and thermal modeling is addressed through structure functions derived from transient thermal measurements. The approach enables accurate prediction of LED performance across varying currents and temperatures, with applications in thermal management and design optimization.
关键词： ideality factor,thermal management,structure function,LED modeling,radiant flux,forward voltage,saturation current,series resistance
更新于2025-09-23 15:23:52
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High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches
摘要： We report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×1017 cm-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm2 at 300 A/cm2, and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×1017 cm-3, 8×1017 cm-3, and 1×1019 cm-3, respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.
关键词： Selective-area doping,GaN,Specific on-resistance,Impurity incorporation,Avalanche breakdown,Leakage currents,Ideality factor,Nonpolar,SIMS,Vertical p-n diodes
更新于2025-09-23 15:22:29
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Electrical characteristics analyses of zinc-oxide based MIS structure grown by atomic layer deposition
摘要： The ZnO films are grown on the p-type Si for metal-insulator-semiconductor (MIS) type Schottky barrier diode (SBHS) fabrication by atomic layer deposition (ALD) method. The electrical characteristics of the three diodes called as D1, D2 and D3 have been investigated. The surface characteristics and thin film in structure were detected by secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM). The current-voltage (I-V) properties of Al/ZnO/p-Si structures were analyzed in the dark at room temperature. The electrical specifications such as, barrier height (?b) ideality factor (n) and series resistance (Rs) of these structures were examined by Norde’s function, Cheung method and thermionic emission (TE) theory. Barrier height values computed from Cheung and I-V method was found to be different from each other. Interface state density (Dit) of these structures was studied using the I-V properties. The non-ideal behavior of measured characteristics advised the presence of interface conditions. The acquired results imply that the fabricated diodes can be used for NIR Schottky photo detector applications.
关键词： ZnO,series resistance,ideality factor,Atomic Layer Deposition,Schottky photo detector
更新于2025-09-23 15:21:01
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An improved mathematical model of photovoltaic cells based on datasheet information
摘要： In order to tackle the nonlinear transcendental equation and intractability of traditional photovoltaic (PV) cells model, this paper proposes a two-step modeling method based on datasheet information. Firstly, grounded on the assumption that the open circuit voltage and short circuit current are independent of series resistance Rs and shunt resistance Rsh, the PV cells model is separated as the ideal model part and the resistance network part. Then, according to the data provided by the manufacturer under Standard Test Conditions (STC) and Nominal Operating Cell Temperature (NOCT) conditions, the parameters photocurrent Iph, reverse saturation current Io and ideality factor n are obtained to achieve the purpose of modeling the ideal model part. Meanwhile, the parameters Rs and Rsh are obtained according to the data provided by the manufacturer under STC to achieve the purpose of modeling the resistance network part. Finally, the open circuit voltage and short circuit current of three di?erent material types of PV cells are obtained by the modeling method and compared with the actual experimental data to verify the mentioned assumption. Moreover, the current-voltage characteristic curves of these three PV cells are also obtained and the corresponding errors are analyzed and discussed.
关键词： Five-parameters model,Datasheet information,Current-voltage characteristic curve,Photovoltaic cells,Ideality factor
更新于2025-09-23 15:19:57
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The study on saturation current and ideality factor of CdTe solar cell based on CdS window layer deposited with hydrogen peroxide
摘要： By adding hydrogen peroxide (H2O2) to the solution, a more compact cadmium sulfide (CdS) film with larger optical band gap is fabricated by chemical bath deposition method. The oxidation of CdS is confirmed by the formation of cadmium sulfate (CdSO4) in the CdS window layer via x-ray photoelectron spectroscopy investigation. The analysis of quantum efficiency considering the alloy CdS1?yTey shows that the oxygenated CdS suppress the S-Te interdiffusion, which promotes the spectral response in short-wave range. Moreover, this oxygenated CdS layer promoted the conversion efficiency of the cadmium telluride (CdTe) based solar cell from11.2% to 14.0% due to the improvement of open-circuit voltage and the fill factor. The transport mechanisms of saturation current are evaluated by temperature dependent current–voltage curves. Results show that the oxygenated window layer reduces both the interfacial and bulk recombination, thus improves the ideality factor. The decrease of bulk recombination in depletion region is attributed to the fewer trap level induced from S-Te interdiffusion. The decrease of interfacial recombination is attributed to the larger optical band gap of oxygenated CdS, which results in a spike-like conduction band alignment at CdS/CdTe heterojunction.
关键词： saturation current,CBD,open-circuit voltage,ideality factor,CdS:O/CdTe heterojunction,hydrogen peroxide
更新于2025-09-19 17:13:59
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Revelating mechnism of light ideality factor in organic solar cells
摘要： Light ideality factor, the slope of open-circuit voltage versus the logarithm of the illumination intensity, is a topic of continuing debate in solar cells. However, the generally accepted interpretation of the ideality factor will fail when the factor is larger than 2. This work demonstrates that the mechanism for light ideality factor is degeneracy of carriers by using the generalized Einstein coefficient in the drift-diffusion model. Moreover, this work proposes that the light ideality factor should satisfy the relation of 0:1:2:4 under different illumination conditions. This work challenges the generally accepted interpretation of the ideality factor and provides a better understanding of organic solar cells.
关键词： degeneracy of carriers,generalized Einstein relation,organic solar cells,light ideality factor
更新于2025-09-16 10:30:52
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Influence of active layer thickness on photovoltaic performance of PTB7:PC70BM bulk heterojunction solar cell
摘要： In this paper, we studied the effect of active layer thickness on the photovoltaic performance of inverted bulk heterojunction (BHJ) organic solar cell (OSC). The capacitance-voltage (C–V), dark current-voltage (I–V) and impedance spectroscopy (IS) analysis were carried out to explain the active layer thickness dependence on the photovoltaic performance. The OSC with an active layer thickness of 150 nm achieved the best power conversion efficiency (PCE) of 5.87%, while the OSC of 200 nm active layer thickness yielded the worst PCE. Reduction in the fill factor (FF) was the main reason for the reduction in the PCE at large active layer thickness. The dark I–V analysis revealed large defect density for the OSC with active layer thickness of 200 nm, which raised the charge recombination and leakage current and consequently reduced the FF. IS analysis predicted that the charge transport became the serious limitations for the OSC with 200 nm thick active layer, which can be attributed to the weakening of electric field as well as creation of field-free regions. It mainly caused a drastic drop in the fill factor by reducing the charge collection efficiency, consequently deteriorated the photovoltaic performance.
关键词： Charge recombination,Bulk heterojunction solar cell,Ideality factor,Photovoltaic performance,Charge transport resistance,Leakage current
更新于2025-09-16 10:30:52
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Investigation of Photovoltaic Output Characteristics with Iterative Methods
摘要： The photovoltaic (PV) cell has been described by non-linear outputs characteristics in current-voltage and power-voltage. This outputs is affected by various effects such as; solar irradiance, temperature, wind and dust. Also, it is depending of the material used in P-N junction and it can vary with ideality factor of P-N junction. The goal of this paper is to describe and to plot the current-voltage and power-voltage under different temperatures, solar irradiance and ideality factor by using iterative method. To carry out this study, we chose the mono crystalline PV module with 60 cells connected in series to provide 255 Watt manufactured by Sunmodule. The obtained results have shown that the electrical output parameters are affected by the nature of the P-N junction. Moreover, at low irradiance, the maximum power point and open circuit voltage depends of semiconductor. At high solar level, the ideality factor variation of P-N junction affects only the maximum power point. Finally, the maximum power point is determined at different solar intensity level and temperature.
关键词： Irradiation,Ideality factor,Iterative methods,Single diode,MPP
更新于2025-09-12 10:27:22
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Relationship between the ideality factor and the iron concentration in silicon solar cells
摘要： The ideality factor value of silicon ??+ ? ?? solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1010 ? 1013 cm?3, base doping level range of 1015 ? 1017 cm?3, and temperature range of 290 ? 340 K were used in the investigation. The Solar Cells Capacitance Simulator (SCAPS) was the tool used for numerical simulation of these devices. The two-diode model was used to extract the ideality factor. The following cases were considered: (i) Shockley–Read–Hall (SRH) recombination; (ii) both intrinsic recombination and SRH recombination; (iii) unpaired interstitial iron atoms; (iv) both iron–boron pairs and interstitial iron atoms. The algorithms of iron concentration evaluation in silicon solar cell by using current–voltage curve are proposed. The analytic expressions are suggested as well as calibration curves are calculated.
关键词： Ideality factor,Iron concentration,SCAPS simulator,Silicon solar cell
更新于2025-09-11 14:15:04