- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Penetration in Biological Tissue Using Light-Emitting Diodes with Highly Efficient Near-Infrared ScBO3:Cr3+ Phosphor
摘要： Recently, infrared (IR) light-emitting diodes (LEDs) have attracted considerable interest in the research field worldwide. IR phosphors, the basic materials utilized in LEDs, have become a research hotspot as well. Here, we introduce the high-quantum-efficiency IR ScBO3:Cr3+ phosphor, which provides a spectral range of emission from 700 nm to 1000 nm with a peak maximum at 800 nm. Electron paramagnetic resonance spectroscopy, with high element selectivity, was used to elucidate the unusual small peak in the photoluminescence spectrum. Phonon structure and electron–lattice interaction were well observed and discussed via temperature-dependent measurements. Moreover, the high quantum efficiency of 72.8% was achieved. To evaluate their potential practical application, phosphor-converted LED packages were designed, which revealed high stability and high output power of 39.11 mW. Furthermore, the fabricated IR LED demonstrated remarkable penetration ability toward biological tissues. This study provides insights into the luminescent properties and the practical applications of IR LEDs.
关键词： infrared,light-emitting diodes,biological tissue penetration,phosphors,quantum efficiency
更新于2025-09-19 17:13:59
-
Monolayer MoSe <sub/>2</sub> /NiO van der Waals heterostructures for infrared light-emitting diodes
摘要： Nowadays monolayer transition metal chalcogenides (TMCs) have been widely researched due to their excellent optoelectronic properties. However, the preparation of large-sized monolayer TMCs and high-power TMC-based light-emitting diodes are still full of challenges, which limit their application in two-dimensional devices. Here, the large-sized monolayer single-crystalline MoSe2 was synthesized by chemical vapor deposition. The influence of the relative gas pressure ratio of MoO3 to Se on MoSe2 morphology is discussed. The TEM analysis confirmed the presence of 2H-phase monolayer MoSe2. A photoluminescence peak from the MoSe2 monolayer is detected at about 804 nm, illustrating an intrinsic energy bandgap of 1.54 eV. Importantly, a novel 2D/3D heterostructure, monolayer MoSe2/NiO van der Waals heterostructure, is constructed for a light-emitting diode (LED). The electroluminescence peaks of n-MoSe2/p-NiO LED locate at 812 nm, 848 nm and 918 nm, all of which are in the infrared light range. Interestingly, the electroluminescence peaks of our n-MoSe2/p-NiO LED are close to those of conventional air conditioner telecontrollers. So the n-MoSe2/p-NiO infrared LED is forward to be used in infrared remote sensing systems in the future.
关键词： van der Waals heterostructures,infrared light-emitting diodes,Monolayer MoSe2,chemical vapor deposition,NiO
更新于2025-09-16 10:30:52