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AlN-based hybrid thin films with self-assembled plasmonic Au and Ag nanoinclusions
摘要： Aluminum nitride (AlN)-based two-phase nanocomposite thin films with plasmonic Au and Ag nanoinclusions have been demonstrated using a one-step thin film growth method. Such AlN-based nanocomposites, while maintaining their wide bandgap semiconductor behavior, present tunable optical properties such as bandgap, plasmonic resonance, and complex dielectric function. Depending on the growth atmosphere, the metallic nanoinclusions self-organized into different geometries, such as nano-dendrites, nano-disks, and nanoparticles, providing enhanced optical anisotropy in-plane and out-of-plane. The infrared transmission measurements demonstrate the signature peaks of AlN as well as a broad transmission window attributed to the plasmonic nanoinclusions. This unique AlN-metal hybrid thin film platform provides a route to modulate the optical response of wide bandgap III-V nitride semiconductors towards infrared sensing or all optical based integrated circuits.
关键词： plasmonic Au and Ag nanoinclusions,infrared sensing,integrated circuits,AlN-based hybrid thin films,optical properties
更新于2025-10-22 19:40:53
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Embedded Near-Infrared Sensor with Tunable Sensitivity for Nanoscale CMOS Technologies
摘要： Near-infrared (NIR) sensors has become one of the key components in applications, such as temperature, proximity, and even ?ngerprint sensing. A novel full-CMOS (Complementary Metal-Oxide-Semiconductor) compatible near-infrared sensor is proposed and demonstrated in this article. This sensing device consists of a gateless transistor, enabling near-infrared photon absorption in the channel region. With a tunable channel barrier, this near-IR sensor also features a dynamic photo-response with an extending sensing range up to 60 dB.
关键词： full-silicon NIR photodetector,near-infrared sensing,CMOS process compatible
更新于2025-09-23 15:22:29