- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Passively Q-switched and mode-locked Erbium-doped fiber laser with topological insulator Bismuth Selenide (Bi2Se3) as saturable absorber at C-band region
摘要： We experimentally demonstrate Q-switched and mode-locked Erbium-doped fiber laser (EDFL) by using topological insulator (TI) Bismuth Selenide (Bi2Se3) as saturable absorber (SA). The fabricated Bi2Se3 SA exhibits modulation depth and saturation intensity at 39.8% and 90.2 MW/cm2, respectively. By incorporating the fabricated Bi2Se3 SA into the laser cavity, Q-switching operation is generated with repetition rate ranging from 23.5 kHz to 68.2 kHz, pulse width ranging from 2.4 μs to 8.6 μs and maximum peak power is calculated at 19.9 mW. Our cavity can also generate soliton mode-locked pulse with repetition rate of 23.3 MHz and pulse width of 0.63 ps by inserting an additional 5 m long single mode fiber (SMF) into the existing laser cavity. Spectral peaks due to Kelly side-bands and four wave mixing (FWM) were observed on the soliton spectrum. Both Q-switching and mode-locking pulses are stable in the laboratory environment, allowing the realization of compact and low cost pulsed fiber laser with Bi2Se3 SA for various photonics applications.
关键词： Topological insulator,Bismuth-selenide,Q-switched,EDFL,Mode-locked
更新于2025-11-28 14:24:03
-
Bi2Te3 Topological Insulator for Domain-Wall Dark Pulse Generation from Thulium-Doped Fiber Laser
摘要： We have experimentally demonstrated domain-wall (DW) dark pulses from a thulium-doped fiber laser incorporating a topological insulator saturable absorber (SA). The bulk-structured Bi2Te3 was used as the SA, which was constructed on a fiber ferrule platform through the deposition of the Bi2Te3 mixed with distilled water. The DW dark pulses were generated from the thulium-doped fiber laser cavity with a dual wavelength at 1956 nm and 1958 nm. The dark pulse width and the repetition rate were measured as ~10.3 ns and ~20.7 MHz over the pump power of ~80 mW, respectively. To the best of our knowledge, this work is the first demonstrated generation of the DW dark pulse from a thulium-doped fiber laser using nanomaterial-based SA.
关键词： fiber lasers,Bi2Te3,topological insulator,domain-wall dark pulses
更新于2025-11-28 14:23:57
-
Normally-off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors with Gate-First Process
摘要： In this study, AlGaN/GaN heterojunction metal-insulator-semiconductor field-effect transistors with gate-first process were developed for normally-off operation with p-GaN cap layers and SiNx dielectrics. To avoid the effect of the annealing process on the gate, a low-temperature ohmic contact technique was developed at an annealing temperature of about 500 oC for 20 min in N2 ambient. With the assistance of inductively coupled plasma dry etching, a contact resistance of 1.45 Ω·mm and sheet resistance of 1080.1 Ω/□ were obtained in the recessed region. Owing to the inset of the SiNx layer, the threshold voltage of fabricated device was enhanced to approximately 2 V, and good pinch-off was observed with the gate voltage up to 16 V. Compared with the conventional high-temperature ohmic annealing process, the gate leakage current was suppressed significantly in both reverse and forward directions. Good device performance was confirmed with a maximum channel electron field-effect mobility of 1500 cm2V-1s-1.
关键词： low-temperature ohmic contact,normally-off,gate-first,metal-insulator-semiconductor,AlGaN/GaN HFET
更新于2025-09-23 15:23:52
-
Diluted Oxide Interfaces with Tunable Ground States
摘要： The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1?xMnxO3/STO (0 ≤ x ≤ 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of nc = 2.8 × 1013 cm?2, where a peak TSC ≈255 mK of superconducting transition temperature is observed. Moreover, the LaAl1?xMnxO3 turns ferromagnetic at x ≥ 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only dxy electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 × 1012 cm?2 < ns ≤ 1.1 × 1013 cm?2) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
关键词： anomalous Hall effect,2D electron liquid,oxide interfaces,superconductivity,metal-insulator transitions
更新于2025-09-23 15:23:52
-
Quantum phase transition modulation in an atomtronic Mott switch
摘要： Mott insulators provide stable quantum states and long coherence times due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an ultracold Bose gas and optical lattice. With time-evolving block decimation simulations—efficient matrix product state methods—we design a means for transient parameter characterization via a local excitation for ease of engineering into more complex atomtronics. We perform the switch operation by tuning the intensity of the optical lattice, and thus the interaction strength through a conductance transition due to the confined modifications of the 'wedding cake' Mott structure. We demonstrate the time-dependence of Fock state transmission and fidelity of the excitation as a means of tuning up the device in a double well and as a measure of noise performance. Two-point correlations via the g(2) measure provide additional information regarding superfluid fragments on the Mott insulating background due to the confinement of the potential.
关键词： quantum gas,atomtronic switch,optical lattice,atomtronics,quantum phase transition,matrix product states,Mott insulator
更新于2025-09-23 15:23:52
-
Critical impact of gate dielectric interfaces on the trap states and cumulative charge of high-performance organic thin field transistors
摘要： In the operation of OFETs, the electrical properties are strongly dependent on the merits of the constituting layers and the formed interfaces. Here we study the trap states variations at the interface between the organic semiconductor pentacene and polymer insulators. With ZrO2 dielectric modified by polymers and find a 10 × decrease in the density of trap states at the semiconductor/insulator interface, bring about the charge carrier mobility increase from 0.058 cm2/Vs to 0.335 cm2/Vs. In addition, when compare to the thicker films at the same applied gate voltage, the thinner film would lead to enhanced coupling capability and more charges cumulative cumulated at the channel region, which is pivotal for optimizing the performance of OFETs. The results prove that the property of the insulator layer could impact largely on the device performance.
关键词： Organic thin film transistor,Cumulative charge,Insulator/semiconductor interface,Trap states
更新于2025-09-23 15:23:52
-
Real Time Monitoring of a UV Light-Assisted Biofunctionalization Protocol Using a Nanophotonic Biosensor
摘要： A protocol for the covalent biofunctionalization of silicon-based biosensors using a UV light-induced thiol–ene coupling (TEC) reaction has been developed. This biofunctionalization approach has been used to immobilize half antibodies (hIgG), which have been obtained by means of a tris(2-carboxyethyl)phosphine (TCEP) reduction at the hinge region, to the surface of a vinyl-activated silicon-on-insulator (SOI) nanophotonic sensing chip. The response of the sensing structures within the nanophotonic chip was monitored in real time during the biofunctionalization process, which has allowed us to confirm that the bioconjugation of the thiol-terminated bioreceptors onto the vinyl-activated sensing surface is only initiated upon UV light photocatalysis.
关键词： UV light photocatalysis,biofunctionalization,silicon on insulator,nanophotonic sensor,half antibodies
更新于2025-09-23 15:23:52
-
Realization of a three-dimensional photonic topological insulator
摘要： Confining photons in a finite volume is highly desirable in modern photonic devices, such as waveguides, lasers and cavities. Decades ago, this motivated the study and application of photonic crystals, which have a photonic bandgap that forbids light propagation in all directions1–3. Recently, inspired by the discoveries of topological insulators4,5, the confinement of photons with topological protection has been demonstrated in two-dimensional (2D) photonic structures known as photonic topological insulators6–8, with promising applications in topological lasers9,10 and robust optical delay lines11. However, a fully three-dimensional (3D) topological photonic bandgap has not been achieved. Here we experimentally demonstrate a 3D photonic topological insulator with an extremely wide (more than 25 per cent bandwidth) 3D topological bandgap. The composite material (metallic patterns on printed circuit boards) consists of split-ring resonators (classical electromagnetic artificial atoms) with strong magneto-electric coupling and behaves like a ‘weak’ topological insulator (that is, with an even number of surface Dirac cones), or a stack of 2D quantum spin Hall insulators. Using direct field measurements, we map out both the gapped bulk band structure and the Dirac-like dispersion of the photonic surface states, and demonstrate robust photonic propagation along a non-planar surface. Our work extends the family of 3D topological insulators from fermions to bosons and paves the way for applications in topological photonic cavities, circuits and lasers in 3D geometries.
关键词： 3D photonic topological insulator,split-ring resonators,Dirac surface states,robust photonic propagation,topological bandgap
更新于2025-09-23 15:23:52
-
<sup>125</sup> Te nuclear magnetic resonance and impedance spectroscopy study of topological insulator Bi <sub/>2</sub> Te <sub/>3</sub> nanoparticles mixed with insulating Al <sub/>2</sub> O <sub/>3</sub> nanoparticles
摘要： We have studied topological insulator Bi2Te3 nanoparticles mixed with insulating Al2O3 nanoparticles by means of 125Te nuclear magnetic resonance (NMR) and impedance spectroscopy. Our 125Te NMR lineshape measurements revealed the Knight shift of a satellite peak that increased with the mixing ratio of the Al2O3 nanoparticles, indicating that the mixing increases the surface-to-volume ratio of the Bi2Te3 nanoparticles. It is also shown that the impedance spectroscopy can be employed as a simple and effective means of distinguishing the surface electrical properties of the topological insulators in general.
关键词： surface electrical properties,topological insulator Bi2Te3 nanoparticles,125Te nuclear magnetic resonance,impedance spectroscopy
更新于2025-09-23 15:23:52
-
Structural and vibrational properties of PVT grown BiTeCl microcrystals
摘要： High-quality BiTeCl microcrystals are grown by the physical vapor transport (PVT) method without using a foreign transport agent. The plate-like microcrystals with a developed (0001) surface are up to ~500 μm in diameter. The grown crystal phase composition was identified by the X-ray single crystal structure analysis in space group P63mc: a = 4.2475(6) ?, c = 12.409(2) ?, Z = 2 (R = 0.0343). The BiTeCl microcrystal phase purity was verified by Raman microspectrometry under excitation at λ = 632.8 and 532.1 nm.
关键词： PVT crystal growth,crystal structure,topological insulator,SEM,BiTeCl,Raman spectroscopy
更新于2025-09-23 15:23:52