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[IEEE 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2018.10.23-2018.10.25)] 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Threshold Voltage Instability of 1200V SiC MOSFET Devices
摘要： 1200V 4H-SiC MOSFETs have been designed and fabricated sucessfully. The drain current Id = 20 A at Vg = 20 V, corresponding to Vd = 2.0 V. The stability of threshold voltage was studied soon. It is believed that the instability in device behavior during gate bias stress is due to capture of electrons by the SiC/gate dielectric interface traps and the gate dielectric near interface traps. A constant gate voltage of +20V/-10V is applied to the gate at a temperature of 150℃. The threshold voltage are monitored for device stability. Compare with three other commercial devices,the devices show little variation in the Vth.
关键词： threshold voltage,SiC MOSFET,interface states
更新于2025-09-19 17:15:36
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Enhanced X-ray sensitivity of MAPbBr3 detector by tailoring the interface-states density
摘要： An important factor for the high performance of light-harvesting devices is the presence of surface trappings. Therefore, understanding and controlling the carrier recombination of the organic-inorganic hybrid perovskite surface is critical for the device design and optimization. Here, we report the use of aluminum zinc oxide (AZO) as the anode to construct a p-n junction structure MAPbBr3 nuclear radiation detector. The AZO/MAPbBr3/Au detector can tolerate an electrical field of 500 V·cm-1 and exhibit a very low leakage current of ~9 nA, which is one order of magnitude lower than that of the standard ohmic contact device. The interface state density of AZO/MAPbBr3 contact was reduced from 2.17×1010 cm-2 to 8.7×108 cm-2 by annealing at 100 °C under Ar atmosphere. Consequently, a photocurrent to dark current ratio of 190 was realized when exposed to a green LED with a wavelength of 520 nm (~200 mW·cm?2). Simultaneously, a high X-ray sensitivity of ~529 μC·Gyair-1cm-2 was achieved under 80 kVp X-ray at an electric field of 50 V·cm-1. These results demonstrate the use of surface engineering to further optimize the performance of MAPbBr3 detectors, which have many potential applications in medical and security detection with low radiation dose brought to the human body.
关键词： p-n junction,annealing,X-ray detector,MAPbBr3 PSC,interface states density
更新于2025-09-19 17:15:36
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Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride
摘要： The threshold voltages at the onset of conduction for electron and hole branches can provide information on band gap values or the interface states in a gap. We measured conductivity of bilayer graphene encapsulated by hexagonal boron nitride as a function of back and top gates, where another bilayer graphene is used as a top gate. From the measured conductivity the transport gap values were extracted assuming zero interface trap states, and they are close to the theoretically expected gap values. From a little discrepancy an average density of interface states per energy within a band gap (Dit) is also estimated. The data clearly show that Dit decreases as a bilayer graphene band gap increases rather than being constant. Despite the decreasing trend of Dit, interestingly the total interface states within a gap increases linearly as a band gap increases. This is because of ~ 2 × 1010 cm-2 interface states localized at band edges even without a band gap, and other gap states are equally spread over the gap.
关键词： band gap,hexagonal boron nitride,bilayer graphene,transport gap,interface states
更新于2025-09-10 09:29:36
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Second Harmonic Generation: A Non-Destructive Characterization Method for Dielectric-Semiconductor Interfaces
摘要： This paper reviews the application of second harmonic generation (SHG) to characterize dielectric-semiconductor interfaces in microelectronics and photovoltaics. Based on non-linear optics, the method is non-destructive, so particularly advantageous for thin films. The theoretical background shows the possibility to access the electric field at interfaces and consequently to have a non-destructive measurement for interface state densities or fixed charges in oxides. Two more detailed examples of application of SHG characterization will be shown: passivation of silicon using thin film deposited alumina and interface analysis of silicon-on-insulator substrates.
关键词： interface states,dielectric-semiconductor interfaces,fixed oxide charges,interface electric field,second harmonic generation
更新于2025-09-04 15:30:14