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1200nma??Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
摘要： In this paper, the quantum dot intermixing (QDI) technique previously developed for 1550nm-band InAs/InAlGaAs quantum dot (QD) was applied to 1200nm-band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI were employed such as ICP-RIE (Ar+) and ion implantation (Ar+ and B+). As a result, about 80nm PL peak wavelength shift was obtained for ICP-RIE when annealing was performed at 575 °C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm PL peak wavelength shift was obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0×1014 /cm2 and subsequent annealing. Cross sectional image analyses by Scanning Transmission Electron Microscope (STEM) and Energy-Dispersive X-ray Spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.
关键词： intermixing,InAs/GaAs quantum dot,ICP-RIE,rapid thermal annealing,ion implantation
更新于2025-09-23 15:19:57
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Low-Loss Buried-Heterostructure Optical Waveguide Based on Impurity-Free-Vacancy-Diffusion Quantum Well Intermixing
摘要： A new method for fabricating a high-quality buried-heterostructure optical waveguide using quantum well intermixing (QWI) has been demonstrated. By patterning a SiO2 thin ?lm on top of a multiple quantum well (MQW) heterostructure, rapid thermal annealing (RTA) could induce laterally local QWI, resulting in a bandgap blueshift and a simultaneous decrease in the refractive index. Both lateral bandgap and index engineering could be attained along the MQW plane, which could be used for a buried-heterostructure optical waveguide. Two SiO2 strips with 3, 5 and 7 μm windows were fabricated for waveguide on a 1540 nm InGaAsP MQW sample. A 120 nm blueshift under the SiO2 area was observed, leading to the index contrast of 0.07. Far-?eld optical diffraction measurements were also performed to yield angles of 13.9°, 12.8° and 10.6°. A narrower window resulted in a narrower optical waveguide width and exhibited a larger diffraction angle, suggesting that QWI de?ned the buried optical waveguide. In addition, an electroabsorption modulator was also made by buried waveguide. A ?10 dB low optical insertion loss and a 15 dB high extinction ratio in a 500 μm long waveguide were obtained, indicating that a buried heterostructure could be used for photonic devices and integration applications.
关键词： Quantum well intermixing,buried waveguide,electroabsorption modulator (EAM).,low loss waveguide
更新于2025-09-19 17:13:59
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Regional Band‐Gap Tailoring of 1550nm‐band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth
摘要： The regional control of the band-gap energies using the highly-stacked quantum dot (QD) on InP (311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B+ implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550nm-band QD such as integrated WDM light sources.
关键词： rapid thermal annealing,intermixing,ion implantation,quantum dot
更新于2025-09-11 14:15:04
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Temperature-dependent interface stability of MoO <sub/>3</sub> /GaAs(001) hybrid structures
摘要： We report on the influence of growth temperature and post-growth annealing on interface formation and film structure of thin MoO3 films on GaAs(001), which plays an important role for a future application as carrier-selective contacts or diffusion barriers in III/V-semiconductor spin- and opto-electronics or photovoltaics. Growth and post-growth annealing were performed in a manner that emulates heterostructure growth and lithographic processing. High-resolution transmission electron microscopy reveals nanocrystalline (“amorphous”) growth at temperatures up to 200 °C and a transition to polycrystalline growth at about 400 °C. Spatially resolved chemical analysis by energy dispersive x-ray spectroscopy reveals strong intermixing at the MoO3/GaAs(001) interface proceeding during both film deposition and annealing. Our results evidence the important role of intermixing occurring during the process of interface formation at the very beginning of deposition.
关键词： intermixing,temperature-dependent,interface stability,GaAs(001),diffusion barriers,MoO3,carrier-selective contacts
更新于2025-09-10 09:29:36