- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Study of Metala??Semiconductora??Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method
摘要： Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C60 and an Ag electrode on CH3NH3PbBr3 perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH3NH3PbBr3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the di?erent growth temperatures for CH3NH3PbBr3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray di?raction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH3NH3PbBr3 perovskite crystals were observed to form a contact with the Ag/C60 as the photodetector, which revealed a responsivity of 24.5 A/W.
关键词： inverse temperature crystallization,MSM photodetectors,CH3NH3PbBr3 perovskite crystals,large-area crystals
更新于2025-09-16 10:30:52
-
Single crystal hybrid perovskite field-effect transistors
摘要： The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V?1 s?1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.
关键词： hybrid perovskites,field-effect transistors,single crystals,ambipolar transport,inverse temperature crystallization
更新于2025-09-09 09:28:46