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Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors
摘要： The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.
关键词： thin-film transistor,annealing,plasma treatment,ink-jet printing
更新于2025-10-24 16:37:46
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Application of Aerosol Jet 3D Printing with Conductive and Non-Conductive Inks for Manufacturing mm-Wave Circuits
摘要： In this paper, an application of Aerosol Jet 3D printing with conductive and non-conductive inks for the realization of mm-wave circuits well above 30 GHz is presented and investigated. The Optomec 5X aerosol jet 3D printing system is used together with polyimide and silver inks to fully-additive manufacture various microstrip circuits. A section of microstrip transmission line with a transition to a via-less conductor backed coplanar waveguide was designed together with a T-junction and a branch-line coupler. These circuits were designed to operate within the Ka and V frequency bands. The measured thickness of the polyimide dielectric substrate is 20.7 ± 1.35 μm while the silver traces are 2.6 ± 1.35 μm. A section of the transmission line with the developed transitions was measured up to the W-band, exhibiting a total loss of 0.65 dB/mm at 100 GHz. The T-junction power divider yielded a total loss at its center frequency of 34 GHz of 0.55 dB. The 3-dB branch line coupler yielded a loss at its center frequency at 42 GHz of 1.1 dB. The experimental results demonstrate the application of this approach for fast and high-resolution mm-wave circuit fabrication.
关键词： circuit fabrication,additive manufacturing,mm-wave circuits,aerosol jet printing,3D printing
更新于2025-09-23 15:22:29
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Recent progress on jet printing of oxide-based thin film transistors
摘要： Among the printing technologies for printed electronics, jet printing-based methods provide promising solutions to the fabrication of oxide-based thin film transistors (TFTs) for flexible and non-flexible electronics. Their direct patterning capability, non-vacuum and solution-based material formation process have attracted a significant amount of interests from both the academic and industry sectors. This topical review summarizes recent progress on the development of jet printed metal oxide TFTs with special attention given to the surface related effects, ink preparation and post-printing treatments, which are the critical aspects of obtaining high performance printed TFTs. Firstly, a brief introduction is made on the state of art jet printing technologies: the piezoelectric/thermal inkjet printing, the newly emerged electro-hydrodynamic jet printing and aerosol jet printing. Then, surface related issues of wettability and coffee-ring effect are discussed. At last, jet printing of oxide-based TFTs is reviewed according to the classification of printed material types: metal oxide semiconductors, gate dielectrics and conductive electrodes. The extensive review of low temperature annealing methods made this work particular interesting to the printing of oxide-based TFTs on flexible substrates.
关键词： gate dielectric,jet printing,oxide-based semiconductors,thin film transistors,electrode
更新于2025-09-23 15:22:29
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High efficiency and stability of ink-jet printed quantum dot light emitting diodes
摘要： The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
关键词： quantum dot light emitting diodes,ink-jet printing,external quantum efficiency,dual ionic passivation,lifetime
更新于2025-09-23 15:21:01
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Aerosol Jet Printed Optical Waveguides for Short Range Communication
摘要： This article presents an innovative way for additive manufacturing of optical multimode waveguides for short range data transmission. By the use of aerosol jet printing between conditioning lines on flexible foils, low cost and low weight polymer optical waveguides can be easily fabricated. The main advantages – compared to other waveguide manufacturing techniques – are the maximum fabricable waveguide length (not limited by panel- or wafer size), technology costs and 3D-ability. Furthermore, the printing allows for very long structures, which are not limited to wafer or panel sizes. In order to classify the new manufacturing approach and compare it to other technologies such as photolithography, imprinting, dispensing and ion-exchange, results on the mechanical (shear strength) and optical performance (transmittance, near field and attenuation) are presented. In addition, the experimental results on the data transmission performance are important to prove the suitability of the waveguides for high-speed communication applications. In this context, nearly error-free transmission up to 10 Gbit/s was achieved at a wavelength of 850 nm.
关键词： optical multimode waveguide,additive manufacturing,shear test,aerosol jet printing,optical data transmission
更新于2025-09-23 15:21:01
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Thin Dielectric Layer Enabled Low Voltage Operation of Fully Printed Flexible Carbon Nanotube Thin Film Transistors
摘要： Quality of printable dielectric layer has become one of the major obstacles to achieve high performance fully printed transistors. A thick dielectric layer will require high gate voltage to switch on and off the transistors, which will cause high power dissipation in printed devices. In response to this challenge, fully printed carbon nanotube (CNT) based thin film transistors (TFTs) have been fabricated on flexible membranes such as polyimide and liquid crystal polymer using aerosol jet printing (AJP). These devices can be operated at bias voltages below ±10 V (drain/gate voltages around ±6 V). It is much smaller than the previously reported values for fully printed CNT-TFTs using xdi-dcs (mixture of poly(vinylphenol)/poly (methylsilsesquioxane)) as dielectric and using a single printing method. This is enabled because of thin dielectric layer (~300 nm) and good uniformity in printed CNT network. The printed CNT-TFTs show on/off ratio > 105, and mobility > 5 cm2V-1s-1. Layer-by-layer deposition of CNT allows highly uniform and dense network formation, and the optimization of the xdi-dcs concentration using natural butyl alcohol provides a high-yield printing of a thin dielectric layer. Collectively, this work shows a potential of using fully printed CNT-TFTs in various flexible electronic applications such as wearable sensors, actuators, artificial skins, displays and wireless tags and antennas.
关键词： xdi-dcs,aerosol jet printing,printed dielectric,flexible electronics,fully printed thin film transistors,carbon nanotube network
更新于2025-09-19 17:13:59
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Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors
摘要： Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.
关键词： visible light photodetection,plasmon energy detection,ink-jet printing,zinc-oxide-based thin-film transistors,oxygen plasma treatment
更新于2025-09-19 17:13:59
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34.3: <i>Invited Paper:</i> Printing Pixel Circuits on Light Emitting Diode Array for AMLED Displays
摘要： An active matrix light emitting display module integrated with carbon nanotubes control circuits was fully printed. The high performance of super pure single-chirality carbon nanotube TFT provides super bright and low power consumption technologies for indoor and outdoor augmented reality that are highly desirable for civil and military display applications.
关键词： Aerosol Jet Printing,Active Matrix LED Display Module,Single Chirality Semiconducting Single-Walled Carbon Nanotubes,Thin Film Transistors,Light Emitting Diode Array
更新于2025-09-16 10:30:52
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Lasing characteristics of a pyrromethene597-doped microdisk laser fabricated by the ink-jet printing method
摘要： A microdisk laser based on the fluorinated hyper branched polymer FC-V-50 was fabricated on an FEP (fluorinated ethylene propylene) substrate with the use of the ink-jet printing method. Pyrromethene597 doped 10 wt.% FC-V-50 solution in ethanol was used for the fabrication of a microdisk laser. The FC-V-50 polymer is characterized by a carboxyl functional group, which can be activated and attached to an amine group found in biomolecules. Based on the lasing characteristics, it is found that the microdisk laser has a relatively low lasing threshold of 34.51 μJ mm?2 and a reasonable Q factor of 7.52 × 103 at 586.59 nm. Therefore, the microdisk can be used for biosensing. The root mean square (RMS) of the surface roughness of the microdisk was estimated to be 6.2 nm. The surface roughness results scattering losses and limits the Q factor. This work reports the first demonstration of a microdisk laser based on FC-V-50 for biosensing applications.
关键词： ink-jet printing,microdisk laser,pyrromethene597,biosensing,FC-V-50
更新于2025-09-11 14:15:04
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Non-Fullerene Based Printed Organic Photodiodes with High Responsivity and MHz Detection Speed
摘要： Digitally printed organic photodiodes (OPDs) are of great interest for the cost-efficient additive manufacturing of single and multi-device detection systems with full freedom of design. Recently reported high-performance non-fullerene acceptors (NFAs) can address the crucial demands of future applications in terms of high operational speed, tunable spectral response as well as device stability. Here, we present the first demonstration of inkjet and aerosol-jet printed OPDs based on the high-performance NFA, IDTBR, in combination with poly(3-hexylthiophene) (P3HT) exhibiting a spectral response up to the NIR. These digitally printed devices reach record responsivities up to 300 mA/W in the visible and NIR spectrum competing with current commercially available technologies based on Si. Furthermore, their fast dynamic response with cut-off frequencies surpassing 2 MHz outperforms most of the state-of the-art organic photodiodes. The successful process translation from spincoating to printing is highlighted by the marginal loss in performance compared to the reference devices, which reach responsivities of 400mA/W and detection speeds of more than 4 MHz. The achieved high device performance and the industrial relevance of the developed fabrication process provide NFAs with an enormous potential for the development of printed photodetection systems.
关键词： aerosol-jet printing,spectral responsivity,non-fullerene acceptor,inkjet printing,digital printing,organic photodiode
更新于2025-09-10 09:29:36