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Recent progress in laser materials processing and synthesis
摘要： Already today, high-power lasers have become indispensable for many areas of material processing such as welding, cutting, engraving or drilling. Without them, many industrial production processes are no longer possible. In the age of Industry 4.0, the integration of intelligent production systems and advanced information technologies, laser-assisted material processing, and synthesis will become even more important. Thanks to their high throughput, great precision, and efficiency as well as the excellent quality of the processed products laser-based technologies are on the way of becoming one of the most important processing and production routes of the future. By changing laser parameters such as wavelength or pulse durations many different types of materials, including metals, polymers, ceramics, and their composites can be processed. The energy required for processing can be provided in a localized volume with negligible heat transfer to the surrounding components. Due to these unique properties of lasers, new applications of the laser as a material processing tool are continuously made available. New process pathways in additive manufacturing, surface structuring, material deposition or nanoparticle synthesis are among the newer application areas of lasers.
关键词： nanoparticle synthesis,laser materials processing,laser synthesis,additive manufacturing,high-power lasers
更新于2025-09-23 15:19:57
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A Hydrogen Peroxide Sensor Based on Catalytically Active Systems Rua??RuO2 Obtained by High-Speed Laser Synthesis
摘要： There is a need for simple and economical chemical sensors for monitoring the concentration of hydrogen peroxide in biological media. In this work, we demonstrate the possibility of using for this purpose catalytically active ruthenium compounds obtained by high-speed laser synthesis on the surface of a graphite electrode.
关键词： Ru–RuO2,graphite electrode,catalytically active systems,hydrogen peroxide sensor,high-speed laser synthesis
更新于2025-09-23 15:19:57
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Direct Laser Synthesis of Two-Dimensional Transition Metal Dichalcogenides
摘要： The emergence of nanomaterials with their often superior mechanical, electronic and optical properties compared with bulk form demands a robust technology that can synthesize, modify and pattern scalably and cost effectively. This can be fulfilled via laser processing protocols which produce such materials with both high precision and excellent spatial controllability [1]. Direct laser synthesis of nanomaterials such as graphene and nano-structured metal oxides have been explored thoroughly for a wide range of applications [2,3]. However, to date, there are only a few reports associated with the laser processing of two-dimensional transition metal dichalcogenides (2D-TMDCs) [4]. These mainly utilize laser radiation for thinning TMDC films through sublimation down to a single molecular thickness [1]. However, this top-down approach is not practical for large- area and scalable production. In addition, further processing steps such as lithographic patterning are then required for discrete device fabrication. Here we present a novel method for the local synthesis and patterning of two-dimensional MoS2 and WS2 layers. The synthesis of these materials is achieved by spatially selective, visible laser irradiation of suitable precursors coated on the surface of planar substrates under ambient, room temperature conditions. The non- exposed precursor regions are then completely removed in a single step, revealing the synthesised 2D-TMDCs. This method can produce micro-patterned films with lateral dimensions that approach the diffraction limit of the focused laser beam. An example of such laser synthesised MoS2 tracks can be seen in the optical microscopy image of Figure 1(a) where it clearly shows a well-defined micro-pattern without any precursor residue. Using this method, we have achieved local synthesis of of MoS2 and WS2 with thickness down to three molecular layers for MoS2 and monolayer WS2 on various glass and crystalline substrates. The quality and thickness of the resulting films can be tuned by modifying the precursor chemistry and laser parameters. Different microprobe and spectroscopic spectroscopy, photoluminescence spectroscopy (PL) and X-ray photoelectron spectroscopy (XPS) have been used to assess the quality and thickness of the deposited MoS2 and WS2 structures. Finally, we have demonstrated the electronic functionality of our films by fabricating a thin film transistor (TFT). The transfer characteristics (source-drain current vs gate voltage) of such a TFT using a laser-synthesised MoS2 channel is shown in Figure 1(b).
关键词： Two-Dimensional Transition Metal Dichalcogenides,WS2,MoS2,Direct Laser Synthesis,Thin Film Transistor
更新于2025-09-11 14:15:04