Stretchable active matrix of oxide thin-film transistors with monolithic liquid metal interconnects

摘要： We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching.