Simulation of a-Si:H/c-Si heterojunction solar cells: From planar junction to local junction

摘要： In order to obtain higher conversion efficiency and reduce production cost for the HIT (Heterojunction with Intrinsic Thin film) solar cell was investigated. The performance hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) based heterojunction solar cells, HACL solar cell was compared with that of the HIT and HACD (Heterojunction of Amorphous silicon and Crystalline silicon with Diffused junction) solar cells. The simulated results indicated that a-Si:H layer can bring about much absorption loss. The conversion efficiency and the short-circuit current density of the HACL cell can reach 28.18% and 43.06 mA/cm2, respectively, and are higher than that of the HIT and HACD solar cells. The main reasons for the great improvement are (1) to reduce optical absorption loss of a-Si:H and (2) to reduce photocarrier recombination for the HACL cell. The double-side local junction is very suited for the bifacial solar cells. For a HACL cell with n-type or p type c-Si base, all n-type or p-type c-Si passivating structure can decrease the consumption of rare materials since the transparent conductive oxide (TCO) can be free in this structure. It is concluded that the HACL solar cell is a promising structure for high efficiency and low cost.