- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 2nd International Conference on High Voltage Engineering and Power Systems (ICHVEPS) - Denpasar, Bali, Indonesia (2019.10.1-2019.10.4)] 2019 2nd International Conference on High Voltage Engineering and Power Systems (ICHVEPS) - IoT Application for On-line Monitoring of 1 kWp Photovoltaic System Based on NodeMCU ESP8266 and Android Application
摘要： The ?rst quanta image sensor jot with photon counting capability is demonstrated. The low-voltage device demonstrates less than 0.3e- r.m.s. read noise on a single read out without the use of avalanche gain and single-electron signal quantization is observed. A new method for determining read noise and conversion gain is also introduced.
关键词： low read noise,CMOS image sensor,high conversion gain,quanta image sensor,jot device,photon counting
更新于2025-09-19 17:13:59
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[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Dielectric and Plasmonic Vivaldi Antennas for On-Chip Wireless Communication
摘要： The ?rst quanta image sensor jot with photon counting capability is demonstrated. The low-voltage device demonstrates less than 0.3e- r.m.s. read noise on a single read out without the use of avalanche gain and single-electron signal quantization is observed. A new method for determining read noise and conversion gain is also introduced.
关键词： CMOS image sensor,high conversion gain,low read noise,photon counting,jot device,quanta image sensor
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluation of Carrier Trapping in SiN <sub/>x</sub> Towards Ion Migration Measurements
摘要： A low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) has been developed and demonstrated for the first time at photoelectron-counting-level imaging. To achieve a high pixel conversion gain without fine or special processes, the proposed pixel has two unique structures: 1) coupling capacitance between the transfer gate and floating diffusion (FD) and 2) coupling capacitance between the reset gate and FD, for removing parasitic capacitances around the FD node. As a result, a CIS with the proposed pixels is able to achieve a high pixel conversion gain of 220 μV/e? and a low read noise of 0.27e? rms using correlated multiple-sampling-based readout circuitry.
关键词： low read noise,high conversion gain,photoelectron counting histogram (PCH),CMOS image sensors (CISs),photon counting
更新于2025-09-16 10:30:52