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Low-Temperature Graphene Growth by Forced Convection of Plasma-Excited Radicals
摘要： We developed the forced convection (FC)-PECVD method for the synthesis of graphene in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil and monolayer graphene growth with few defects is achieved even at low temperature (<400 °C). We also demonstrated the enlargement of growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.
关键词： low temperature growth,self-limiting growth,Graphene,forced-convection plasma CVD
更新于2025-09-23 15:23:52
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A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe
摘要： we have assessed, in 300 mm Reduced Pressure – Chemical Vapour Deposition chambers from major suppliers, the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Si growth rates are, for T < 575°C, approximately ten times higher with Si2H6 than with SiH4, which are in turn roughly ten times higher than with SiH2Cl2. For given GeH4 and Si precursor mass-flow ratios, lower Ge contents and much higher SiGe growth rates are obtained at 550°C, 20 Torr with Si2H6 than with SiH4 and especially SiH2Cl2. Growth rates (Ge concentrations) are with SiH4 and SiH2Cl2 lower (slightly lower) in Supplier A than in Supplier B chamber. The situation is the opposite with Si2H6. This is assigned to (i) a ~ 5°C offset between the two and (ii) effective precursor flows which are different, most likely due to chamber geometry differences. Growth rate activation energies and relationships linking Ge concentration to precursor mass-flow ratios are quite similar, however, making process transfer between the two rather easy. Finally, we have compared ex-situ “HF-Last” wet cleanings and in-situ surface preparation processes for Si surface conditioning prior to epitaxy. Surfaces are after the latter always under high purity N2. This results in a threshold H2 bake temperature (above which there is no O interfacial contamination anymore) which is shifted downwards by ~ 25°C (from 775°C down to 750°C). Below that threshold, O sheet concentrations are with in-situ processes typically one third those associated with “HF-Last” wet cleanings and epitaxial surfaces are smoother.
关键词： surface preparation,SiGe,silane,disilane,RP-CVD,low temperature growth,Si,dichlorosilane
更新于2025-09-23 15:21:01
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Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
摘要： This report introduces a method for fabricating graphene at low temperatures via chemical vapor deposition enabled by ultrathin (～1 nm) nickel-gold (Ni-Au) catalysts. The unique combination of high carbon (C) solubility Ni, low C solubility Au, and an ultrathin layer of a catalyst demonstrates the effectiveness to produce graphene at 450 °C with the layer number independent of growth duration. In contrast to grain-boundary defined catalyst morphology found in thicker (>20 nm) metal catalysts, the ultrathin catalyst morphology leads to the formation of nanoscale metal “islands” during the growth process, which results in curved graphene covering the catalyst. To test the effect of preactivation of the ultrathin catalyst for the formation of graphene, a preanneal process of the catalyst followed by the introduction of a carbon precursor was also investigated. The preanneal process resulted in the formation of carbon nanotubes (CNTs) in lieu of graphene, displaying the impact of the catalytic surface treatment in relation to the produced materials. The results and discussion presented here detail a low-temperature nanoscale manufacturing process that allows for the production of either graphene or CNTs on an ultrathin catalyst.
关键词： graphene,low-temperature growth,nickel-gold catalysts,chemical vapor deposition,ultrathin alloy catalysts
更新于2025-09-19 17:13:59
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Single-walled carbon nanotube growth at low temperature by alcohol gas source method using Co catalyst: enhancement effects of Al<sub>2</sub>O<sub>3</sub> buffer layer on carbon nanotube yield
摘要： Using an alcohol gas source chemical vapor deposition method, we attempted to grow single-walled carbon nanotube (SWCNT) growth using Co catalysts on Al2O3 buffer layers. Reducing the growth temperature decreased the optimal ethanol pressure to obtain the highest SWCNT yield. By optimizing the ethanol pressure, we succeeded in growing SWCNTs at 400oC. Irrespective of the growth temperature, SWCNT yields from Co catalysts on Al2O3 buffer layers were higher than those on SiO2/Si substrates, but the enhancing effects of Al2O3 buffer layers on SWCNT yield were reduced below 500oC. Taking into account both in-plane X-ray diffraction results and decrease of catalyst aggregation in the low temperature region, we concluded that the density of Co particles suitable for SWCNT growth increased on SiO2 surface at low temperature, resulting in the reduction of difference in SWCNT yield at low temperature between Al2O3 buffer layers and SiO2/Si substrates.
关键词： catalyst,CVD,low-temperature growth,single-walled carbon nanotube,Co
更新于2025-09-16 10:30:52