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Improvement of Ga distribution with Sb incorporation for two-step low-temperature processing of CIGSe thin film solar cells
摘要： In this study, the application of Sb incorporation for low-temperature (≤ 450 °C) processing of Cu(In,Ga)Se2 (CIGSe) solar cells is explored. At low reaction temperature, most Ga remains at the back of the ?lm adjacent to the Mo back contact. We observed that the incorporated Sb enhanced grain size and improved device performance compared with similarly processed CIGSe ?lms made without Sb. From the energy-dispersive spectroscopy analysis and secondary ion mass spectrometry results, it was determined that elemental Ga accumulation at the back of the reacted ?lm after the two-step selenization process was signi?cantly alleviated owing to Sb incorporation. Signi?cant Sb-induced grain size enhancement was con?rmed using cross-sectional scanning electron microscopy. The electronic and optical properties of the Sb incorporated CIGSe ?lms were examined with admittance spectroscopy and ?uorescence lifetime imaging techniques.
关键词： Ga distribution,Thin ?lm solar cell,Sb incorporation,Low temperature process
更新于2025-11-14 17:28:48
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Polymer-assisted In-situ Growth of All-Inorganic Perovskite Nanocrystal Film for Efficient and Stable Pure Red Light-emitting Devices
摘要： In the past few years, a substantial progress has been made for perovskite light-emitting devices. Both pure green and infrared thin film perovskite light-emitting devices with external quantum efficiency over 20% have been successfully achieved. However, pure red and blue thin film perovskite light-emitting diodes still suffer from inferior efficiency. Therefore, the development of efficient and stable thin film perovskite light-emitting diodes with pure red and blue emissions is urgently needed for possible applications as a new display technology and solid-state lighting. Here, we demonstrate an efficient light-emitting diode with pure red emission based on polymer-assisted in-situ growth of high quality all-inorganic CsPbBr0.6I2.4 perovskite nanocrystal film with homogenous distribution of nanocrystals in size of 20 ~ 30 nm. With this method, we can dramatically reduce the formation temperature of CsPbBr0.6I2.4 and stabilize its perovskite phase. Eventually, we successfully demonstrate a pure-red-emission perovskite light-emitting diode with a high external quantum efficiency of 6.55% and luminance of 338 cd/m2. Furthermore, the device obtains an ultra-low turn-on voltage of 1.5 V and a half-lifetime of over 0.5 hours at a high initial luminance of 300 cd/m2.
关键词： cesium-based perovskite,perovskite-polymer hybrid,Low-temperature process,pure red-emitting,perovskite LED
更新于2025-09-23 15:21:21
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Low Temperature Processed Highly Efficient Hole-Transport-Layer Free Carbon-based Planar Perovskite Solar Cells with SnO2 Quantum Dot Electron-Transport-Layer
摘要： The use of expensive hole transport layer (HTL) and back contact along with the stability issue of perovskite solar cells have been a detrimental factor when it comes to commercialization of the technology. In addition, high-temperature and long annealing time processed electron transport layers (ETLs, e.g., TiO2) prevents the flexible solar cell application in most polymer substrate. Herein, we opted for HTL-free carbon electrodes owing to their low-cost production and superior stability in air, compared to their noble metal counterparts. In this work, we fabricate planar perovskite solar cells using low-temperature solution processed SnO2 quantum dots (QDs) as ETL, which offers significant advantages over high temperature processed ETLs due to its excellent electron extraction and hole blocking ability. In addition, by integrating a low cost and stable carbon electrode, an impressive energy conversion efficiency of 13.64% with a device architecture glass/In doped SnO2/QD-SnO2/Perovskite/Carbon under 1 sun illumination at ambient conditions have been achieved. This work paves the way to achieve fully low-temperature processed printable perovskite solar cells (PSCs) at an affordable cost by integrating the QD SnO2 ETL and Carbon electrode.
关键词： low-temperature process,planar perovskite solar cells,hole transport layer free,carbon electrode,SnO2 Quantum Dot
更新于2025-09-19 17:13:59
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Low-temperature Synthesized Nba??doped TiO <sub/>2</sub> Electron Transport Layer enabling High-efficiency Perovskite Solar Cells by Band Alignment Tuning
摘要： An Nb-doped TiO2 (Nb-TiO2) film comprising a double structure stacked with a bottom compact layer and top mesoporous layers was synthesized by treating a Ti precursor-coated substrate using a one-step low-temperature steam-annealing (SA) method. SA-based Nb-TiO2 films possess high crystallinity and conductivity, and that allows better control over the conduction band (CB) of the TiO2 for electron transport layer (ETL) of the perovskite solar cells (PSCs) by the Nb doping level. Optimization of power conversion efficiency (PCE) for the Nb-TiO2 based ETL was combined with CB level tuning of the mixed-halide perovskite by changing the Br/I ratio. This band offset management enabled to establish the most suitable energy levels between ETL and perovskites. This method was applied to reduce the bandgap of perovskite to enhance photocurrent density while maintaining a high open-circuit voltage. As a result, the optimal combination of 5 mol% Nb-TiO2 ETL and 10 mol%-Br in the mixed-halide perovskite exhibited high photovoltaic performance for low-temperature device fabrication, achieving a high yield PCE of 21.3%.
关键词： low-temperature process,solvent-free hydrothermal synthesis,electron transport layer,steam-annealing method,Perovskite solar cell,niobium-doped TiO2
更新于2025-09-19 17:13:59
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Evidence of Low Temperature Joints in Silver Nanowire Based Transparent Conducting Layers for Solar cells
摘要： The primary stage of joint formation of silver nanowires (AgNWs) at 60 °C is investigated using rotary scanning transmission electron microscopy (STEM with tomographic reconstruction images), and super large-scale molecular dynamic (MD) simulation (2×106 atoms). This study proves to establish that silver nanowires do not require the conventional high temperature post treatment process at 200 °C to form fused contacts at the intersections. In fact, a low temperature annealing at 60 °C facilitates formation of highly conductive networks. The connection between the nanowires is made through a stage called thinning, shown in this report for the first time, which occurs before broadening of the nanowires and is caused due to simultaneous effects of loads from the top nanowires and the heating, as confirmed by STEM and MD result. The outcomes of our investigation significantly promote the application of AgNWs as a transparent conductive layer for solar cells with requirement of low temperature processing such as Kasterite, Perovskite and Organic solar cells.
关键词： Low temperature process,Scanning transmission electron microscopy,Molecular dynamic simulation,Junction resistivity,Transparent conductive layer,Silver nanowire
更新于2025-09-19 17:13:59
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Solar Engineering of Thermal Processes, Photovoltaics and Wind || Solar Industrial Process Heat
摘要： Very large amounts of energy are used for low-temperature process heat in industry, for such diverse applications as drying of lumber or food, cleaning in food processing, extraction operations in metallurgical or chemical processing, cooking, curing of masonry products, paint drying, and many others. Temperatures for these applications can range from near ambient to those corresponding to low-pressure steam, and energy can be provided from flat-plate collectors or concentrating collectors of low concentration ratios.
关键词： flat-plate collectors,low-temperature process,solar energy,concentrating collectors,industrial process heat
更新于2025-09-16 10:30:52
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Effect of tantalum doping on SnO <sub/>2</sub> electron transport layer via low temperature process for perovskite solar cells
摘要： The electron transport layer (ETL) plays an important role in determining the device performance of perovskite solar cells (PSCs). Recently, SnO2 has been used extensively as an ETL due to its many outstanding optoelectronic properties. Herein, we develop Ta doped SnO2 (Ta-SnO2) as an ETL grown by chemical bath deposition, allowing the fabrication of low-temperature PSCs. In contrast to pristine SnO2, the I-V curve and transmittance spectra show a signi?cant conductivity improvement of Ta-SnO2 without declining the light transmittance property. Meanwhile, Ta-doping could accelerate the electron transfer and decrease the recombination probability at the SnO2/perovskite interface, as well as passivate the electron traps, leading to the improvement in the PSC performance. Through a series of optimization methods, the champion device shows a power conversion ef?ciency of 20.80%, with an open-circuit voltage of 1.161 V, a short-circuit current density of 22.79 mA/cm2, and a ?ll factor of 0.786. SnO2 with a suitable Ta content is a promising candidate as an ETL for fabricating high-ef?ciency PSCs via the low-temperature process.
关键词： perovskite solar cells,Ta doping,SnO2,electron transport layer,low-temperature process
更新于2025-09-16 10:30:52
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Higha??Efficiency Lowa??Temperaturea??Processed Mesoscopic Perovskite Solar Cells from SnO <sub/>2</sub> Nanorod Selfa??Assembled Microspheres
摘要： Mesoporous scaffolds in perovskite solar cells (PSCs) can accelerate the formation of heterogeneous nucleation sites, leading to enhanced quality of perovskite films and uniform perovskite coverage over large areas. Nevertheless, the mesoporous electron transport layers (ETLs) can effectively compensate for the drawback of shorter electron diffusion lengths than their hole counterparts. Therefore, most mesoscopic PSCs usually show superior photovoltaic performance to their planar counterparts. However, mesoporous ETLs, particularly those prepared with metal oxide nanocrystals, often require a high-temperature sintering process for the removal of residual organics and the improved crystallization of metal oxides. Here, a novel emulsion-based bottom-up self-assembly strategy is used to prepare sizable SnO2 microspheres from oleic acid capped SnO2 nanorods. Combined with an in-situ ligand-stripping strategy, the low-temperature solution-processed mesoscopic PSCs can achieve efficiency as high as 21.35% with slight hysteresis and good reproducibility. In particular, the emulsion-based bottom-up self-assembly strategy is a general way for preparing microspheres from several kinds of semiconductor nanocrystals, so it will greatly expand the material selection range for preparing efficient mesoscopic PSCs and even inverted mesoscopic devices.
关键词： mesoscopic perovskite solar cells,in situ ligand stripping,low-temperature process,SnO2 nanorod self-assembled microspheres
更新于2025-09-16 10:30:52
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Micro tuning of wide-bandgap perovskite lattice plane for efficient and robust high-voltage planar solar cells exceeding 1.5 V
摘要： Iodide-free tribromide based perovskites, with their wide bandgap of over 2.0 eV, are highly regarded as potential candidates for a photoelectrochemical water splitting system and the topmost cell in tandem solar cell. Herein, we report on the importance of micro tuning of crystal-lattice by cesium incorporation into A-site on low temperature processed formamidinium lead tribromide (CH(NH2)2PbBr3 = FAPbBr3) perovskite films. The partial incorporation of cesium bromide (CsBr) in to FAPbBr3 film tunes crystal-lattice interactions, resulting in a high-purity cubic crystal system with preferred orientation. An entirely low temperature processed planar photovoltaic device assembled with FAPbBr3 containing 8% Cs (Cs0.08FA0.92PbBr3) exhibited an optimum PCE (power conversion efficiency) of 8.56% with a Voc (open-circuit voltage) of 1.516 V, which is higher than the PCE of 7.07% and Voc of 1.428 V of the FAPbBr3 device. Photoluminescence-intensity and temporal-imaging measurements were conducted by laser scanning confocal time-resolved microscopy (LCTM), which revealed that CsBr incorporation into a FAPbBr3 film significantly suppresses the non-radiative recombination pathways and homogenizes the spatial distribution of photoluminescence. It was visualized that the incorporation of CsBr in FAPbBr3 directly affects the bulk defect and photoluminescence properties, which provides evidence that Cs ions surely alleviate the segregation and aggregation of ions in the perovskite film. Notably, the Cs0.08FA0.92PbBr3 film, with a carrier lifetime of about 270 ns, exhibited a 1.37-fold longer radiative recombination time than that (210 ns) observed for the FAPbBr3 film. Furthermore, aging experiments without encapsulation under ambient (in air for 2000 h) and severe (65 °C and 65% RH for 500 h) conditions revealed that the Cs0.08FA0.92PbBr3 devices were more robust than the FAPbBr3 devices.
关键词： Low-temperature process,High-photovoltage,Wide-bandgap,CsBr,FAPbBr3
更新于2025-09-12 10:27:22
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Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic Substrate
摘要： Achieving a high-resolution display on a plastic substrate requires a to ensure dimensional stability during fabrication process, including the deposition of gate dielectrics. Evaluation platform to confirm the uniform insulating properties of organic dielectric material prior to actual application to organic thin-film transistor (OTFT) arrays was proposed. This test method enabled verification of the suitability of the low-temperature curable dielectric and chemical resistance during fabrication process. A cross-linked poly(hydroxy imide) (PHI) that can be cured at a low temperature of 130°C exhibited stable insulating properties in a large area that sudden breakdown was not observed in an electric field up to 4 MV/cm. Thiophene-thiazole-based copolymer semiconductor was used as an active layer and inkjet-printed. In all the processes, the temperature of the substrate was kept below 130°C, and 4.8-inch electrophoretic display panels on a polyethylene naphthalate (PEN) substrate with a resolution of 98 dpi was demonstrated.
关键词： Organic thin-film transistors,Organic gate dielectric,Plastic substrates,Low-temperature process,Polymer semiconductor,Flexible displays,Inkjet printing
更新于2025-09-10 09:29:36