- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
摘要： This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.
关键词： ion implantation,phosphorus,point defects,laser annealing,photoluminescence,aluminum,TEM,Metal Oxide Semiconductor Field Effect Transistor (MOSFET),SiC,Raman
更新于2025-09-19 17:13:59
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[IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Plasmonic Band-pass/stop Filters Based on Metal-Insulator-Metal Slit Waveguides
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,nanotechnology,emerging devices,enhanced functionality,CMOS,Beyond-complementary metal-oxide semiconductor (CMOS),CAD for nanotechnology,logic synthesis
更新于2025-09-19 17:13:59
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[IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Graphene Based Tunnel Field Effect Transistor for RF Applications
摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.
关键词： logic expressive power,CMOS,CAD for nanotechnology,Beyond-complementary metal-oxide semiconductor (CMOS),enhanced functionality,nanotechnology,logic synthesis,emerging devices
更新于2025-09-19 17:13:59
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Morphology correlated efficiency of ZnO photoanode in dye sensitized solar cell
摘要： We synthesized facile novel morphology of ZnO as nanobeads and hierarchical nanosheet ball by chemical bath deposition method. The ZnO nanobeads and hierarchical nanosheet ball exhibited band gap of 3.12 and 3.23 eV, respectively. The X-ray diffraction patterns indicated crystal structure of ZnO nanobeads and hierarchical nanosheet ball are same however, sintering induced slight compressive stress on ZnO leads to small shift in diffraction angles. Four fold increase in ef?ciency was obtained with ZnO hierarchical nanosheet ball as photoanode in DSSC in comparison to ZnO nanobeads.
关键词： Chemical bath deposition method,morphology variation,metal oxide semiconductor
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon-on-insulator,complementary metal-oxide-semiconductor technology,silicon nanophotonics,germanium,optical photodetectors
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52
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Role of surfactant in optimization of 3D ZnO floret as photoanode for dye sensitized solar cell
摘要： We demonstrate structural, optical and morphological characteristics of surfactant stabilized ZnO floret array by X-ray diffractometer (XRD), Photoluminescence spectrometer, field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). Effects of using weak and strong bases as hexamethylenetetraamine and ammonium hydroxide which work as surfactant have been investigated. High crystallinity has been indicated by XRD patterns. The HRTEM and FESEM reveal that synthesized samples are composed of nanopetal assembled in a shape of floret array. The proposed growth mechanism of 3D ZnO floret arrays exhibits that tremendous amount of ZnO kernel clumps with each other and appears as a broad root for the growing of floret array-like structure. ZnO floret array as photoanode material was used in dye sensitized solar cell (DSSC). This distinctive morphology significantly increases the photovoltaic parameters of DSSC. The optimized efficiency for ZnO floret array as photoanode was found to be 6.6%.
关键词： Metal oxide semiconductor,Microstructure,Morphology variation
更新于2025-09-12 10:27:22
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Integrated color photodetectors in 40 nm standard CMOS technology
摘要： For the further integration of receivers in multi-color visible light communication systems, a novel color photodetector (PD) was designed and fabricated by using a 40 nm standard complementary metal oxide semiconductor (CMOS) process without any process modifications. The PD consists of CMOS photodiode and two-dimensional (2D) polysilicon subwavelength grating above the photodiode. The 2D polysilicon grating is controlled in structural parameters to realize color filtering, based on guided-mode resonance, for the first time in a standard CMOS process. Here three kinds of color PDs were designed to respond to the three primary colors. The measured results demonstrate that the color PDs exhibit wavelength selectivity in the visible range (400-700 nm) and the maximum peaks in the spectral response curves of them are at 660 nm (red), 585 nm (green) and 465 nm (blue), respectively. In addition, the added 2D polysilicon grating almost does not reduce the responsivity of the photodiodes.
关键词： two-dimensional polysilicon subwavelength grating,Color photodetector,visible light communication,complementary metal oxide semiconductor (CMOS)
更新于2025-09-12 10:27:22
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Wearable SiPM-based NIRS Interface Integrated with Pulsed Laser Source
摘要： We present the design of a miniaturized probe integrating silicon photomultiplier and light-pulsing electronics in a single 2x2mm2 CMOS chip which includes functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit. The photon pulses can be either counted on-chip or processed by an external high-speed electronic module such as time-corelated single photon counting (TCSPC) unit. The integrated circuit was assembled on a printed circuit board (PCB) and also on a 2.5D silicon interposer platform of size 1 cm and interfaced with a silicon photomultiplier (SiPM), vertical cavity surface emitting laser (VCSEL) and other ancillary components such as capacitors and resistors. Our approach of integrating an optical interface to optimize light collection on the small active area and light emission from the vertical-cavity surface-emitting laser (VSCEL) will facilitate clinical adoption in many applications and change the landscape of Near Infrared Spectroscopy (NIRS) hardware commercially due to significant optode-size reduction and the elimination of optical fibers.
关键词： Near-Infrared Spectroscopy (NIRS),Time-Domain (TD),complementary metal-oxide-semiconductor (CMOS),Vertical Cavity Surface Emitting Laser (VCSEL),Silicon Photomultiplier (SiPM),Optical Probe
更新于2025-09-11 14:15:04
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13.1: <i>Invited Paper:</i> Single-Photon-Capable Detector Arrays in CMOS-Exploring a New Tool for Display Metrology
摘要： The technology of CMOS-compatible Single Photon Avalanche Diodes is evolving rapidly and has matured to the point at which imaging it can address applications. In this report we consider the current suitability and future potential of CMOS-compatible Single Photon Avalanche Diodes to address the particular application of display metrology.
关键词： Display Metrology,dSiPM,Quanta Image Sensor,CMOS,QIS,Complementary Metal Oxide Semiconductor,Digital Silicon Photo-Multiplier,Single Photon Avalanche Diode,SPAD
更新于2025-09-10 09:29:36