- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
A Novel Current-Controlled Oscillator-Based Low-Supply-Voltage Microbolometer Readout Architecture
摘要： In this paper, we present a novel, almost-digital approach for bolometer readout circuits to overcome the area and power dissipation bottlenecks of analog-based classical microbolometer circuits. A current-controlled oscillator (CCO)-based analog-to-digital converter (ADC) is utilized instead of a capacitive transimpedance amplifier (CTIA) in the classical readout circuits. This approach, which has not been reported before, both produces the required gain in the bolometer input circuit and directly digitizes the bolometer signal. With the proposed architecture, the need for large capacitances (of the order of 10–15 pF for each column) at which the current is accumulated in the bolometer circuits and the voltage headroom limitation of classical microbolometer circuits are eliminated. Therefore, the proposed architecture permits to design readout circuits with reduced pixel pitch and lower power supply, both of which in turn lead to higher-resolution Focal Plane Arrays (FPAs) with lower power dissipation. The new architecture is modeled and simulated using a 180-nm CMOS process for sensitivity, noise performance, and power dissipation. Unlike the 3.3-V power supply usage of classical readout circuits, the proposed design utilizes 1.2-V analog and 0.9-V digital supply voltages with a power dissipation of almost half of the classical approach.
关键词： readout integrated circuit,CCO-based sensor readout,uncooled thermal imaging,microbolometer
更新于2025-09-19 17:13:59
-
Investigation of boron-doped hydrogenated silicon films as a thermo-sensing layer for uncooled microbolometer
摘要： Boron-doped hydrogenated silicon films are used in thermo-sensing layer in infrared detectors or uncooled microbolometers. Among thermo-sensing materials such as vanadium oxide and amorphous silicon and silicon diodes, amorphous silicon is the most common. Parameters such as the temperature coefficient of resistance (TCR), sheet resistance and 1/f noise are very important for the performance of these devices. One thermo-sensing material in particular, boron-doped hydrogenated silicon (BSi:H), has satisfactory TCR, sheet resistance (Rsheet), and 1/f noise values. The BSi:H films are deposited using radio frequency plasma-enhanced chemical vapor deposition. The dependence of electrical, structural, and chemical properties of the BSi:H films on the plasma parameters is reported. The TCR of the films is 1.0 - 2.9 %/K, Rsheet is 1.2 - 37.8 MΩ/□ and crystalline volume fraction is 10.2 - 68.5%. The properties of the amorphous and mixed-phase are compared. It is found that the 1/f noise of the mixed-phase film is lower than that of the amorphous phase film. These results show that the boron doped mixed-phase silicon films are suitable for use as thermo-sensing layers.
关键词： mixed-phase,thermo-sensing layer,uncooled microbolometer,boron-doped hydrogenated silicon films
更新于2025-09-16 10:30:52
-
[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Cooled Silicon-On-Insulator Diode Thermometer: Toward THz Passive Imaging
摘要： Terahertz passive imaging requires high sensitivity detectors, with Minimum Detectable Power (MDP) under the picowatt range. An antenna-coupled cooled microbolometer, incorporating a lateral PiN-like diode as thermometer, could represent a solution. In a first step, such diode performances have to be investigated, especially the temperature coefficient of current (TCC) and the low frequency noise. Prototypes were fabricated on Silicon-On-Insulator (SOI) 4” wafers with 50-nm active silicon layer. I-V and noise measurements down to 81K were useful to derive the electrical MDP of the future bolometer, already reaching 6.6 pW at 10 frames per second.
关键词： low frequency noise,microbolometer,Minimum Detectable Power,PiN diode,temperature coefficient of current,Silicon-On-Insulator,Terahertz passive imaging
更新于2025-09-12 10:27:22
-
[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Micromachined Uncooled Si <sub/>x</sub> Ge <sub/>y</sub> O <sub/>1-x-y</sub> Microbolometer Integrated Metasurface for Uncooled Infrared Detection
摘要： This paper presents a study of metasurface integrated uncooled infrared (IR) silicon germanium oxide (Si-Ge-O) microbolometers for Long Wavelength Infrared (LWIR) detection. The inclusion of the metasurface permits engineering the IR absorptance with respect to wavelength. Absorption by the metasurface eliminates the need for a ?- wave resonant cavity under the microbolometer. In addition, the metasurface can significantly improve the electrical performance of the temperature-sensing layer. Experimental results show an increase in the Temperature Coefficient of Resistance (TCR) and a decrease in the resistivity of the amorphous Si-Ge-O films. These parameters scale with the periodicity and area fraction of the metasurface. The voltage noise power spectral density was reduced by annealing the devices in vacuum. The measured responsivity and detectivity approached 104 V/W and 109 cm Hz1/2/W to filtered blackbody infrared radiation.
关键词： Infrared detector,Metasurface,TCR,Si-Ge-O,Microbolometer,Noise
更新于2025-09-11 14:15:04
-
[IEEE 2019 16th International Conference on Quality in Research (QIR): International Symposium on Electrical and Computer Engineering - Padang, Indonesia (2019.7.22-2019.7.24)] 2019 16th International Conference on Quality in Research (QIR): International Symposium on Electrical and Computer Engineering - Surface Current Analysis of THz Bowtie Antenna-coupled Microbolometer
摘要： Terahertz (THz) frequency band offers several advantages over microwave band such as larger bandwidth and radiation capability for various imaging applications. One of the important components is the THz detector applicable for room temperature use. For the lower THz frequency band, an antenna-coupled microbolometer is considered as the THz wave detector due to its compact structure and easy to fabricate. In this paper, we design and simulate the antenna-coupled microbolometer for 1 THz frequency band. Simulation is conducted by using CST Microwave Studio. A surface current analysis is performed to understand the effect of the increasing resistance of the microbolometer to the power efficiency performance. From the simulation results, the proposed design and analysis method reveals that power efficiency of the microbolometer can be increased by increasing the resistance of the microbolometer.
关键词： microbolometer,Terahertz,surface current
更新于2025-09-11 14:15:04
-
[IEEE 2019 IEEE International Conference on Signals and Systems (ICSigSys) - Bandung, Indonesia (2019.7.16-2019.7.18)] 2019 IEEE International Conference on Signals and Systems (ICSigSys) - Study of Impedance Matching for Optimum Power Transfer in Terahertz Bow-tie Antenna-coupled Microbolometer
摘要： The demand for higher wireless communication speed and latency has been increasing over the past decade. As the LTE frequency has found its maturity in terms of bandwidth spectrum, exploration of new frequency bands is critical to addressing the capacity demand in the future. Terahertz (THz) technology is one of the promising solutions to provide higher bandwidth capacity, data rates and interference-free from other wireless legacy frequency spectrum for the next generation applications such as Internet of Things (IoT). However, the development of THz wave’s detector is still a challenging issue to the date due to its unique radiation characteristic between millimeter wave and infrared domains as well as its complexity issues in very small wavelength. A bolometer can be considered as THz signal detector by converting the received THz waves into heat and further transformed into electrical signals by the thermistor. In this research, we designed an antenna-coupled microbolometer as THz wave receiver. An analysis base on the dissipated energy of the bolometer is conducted to find the optimum energy absorption in which the impedance of the bolometer will be matched with the antenna. The simulation results show that an optimum matching condition can be obtained by considering maximum dissipated energy in higher bolometer resistance.
关键词： microbolometer,dissipated energy,Terahertz
更新于2025-09-11 14:15:04
-
[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Characteristics of VOx Microbolometer on Si<inf>3</inf>N4/SiO<inf>2</inf> Membrane Fabricated by Deep-RIE and XeF2 Vapor Etching for THz-detectors
摘要： VOx thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition (MOD). Then, a VOx microbolometer was fabricated on a Si3N4/SiO2 membrane. A membrane was realized by dry etching of the backside of the Si substrate using a Deep-RIE and XeF2 vapor etching with a good reproducibility. The DC sensitivity of the bolometer on membrane was 2310 W-1. This value was about 15 times higher than that of the VOx microbolometer on the Si3N4/SiO2/Si substrate and about two orders of magnitude higher than that of the Bi microbolometer on a dielectric substrate.
关键词： Si3N4/SiO2 membrane,THz-detectors,VOx microbolometer,Deep-RIE,XeF2 vapor etching
更新于2025-09-09 09:28:46