- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
A 230-GHz High-Power and Wideband Coupled Standing Wave VCO in 65-nm CMOS
摘要： This article presents a 230-GHz wideband harmonic voltage-controlled oscillator (VCO) with large output power based on a compact and low-loss structure of coupled standing wave oscillators. In order to boost the output power, oscillators are coupled together without adding extra passive loss to the circuit. Transistors with inductive drain impedances provide the necessary negative resistance to the oscillators while simultaneously acting as active variable capacitors for frequency tuning and generate the desired second-harmonic power through their nonlinearities. Transmission lines at the drains are responsible for creating the inductive impedance as well as coupling adjacent oscillators and routing and combining the output power. Therefore, the circuit has a compact structure that minimizes passive losses. A varactor-less frequency tuning scheme is used and allows for wideband operation without sacrificing the output power. In addition to oscillator coupling and minimizing the losses, the output power has been boosted by engineering the harmonic impedance that is seen by the transistors in the circuit. The prototype chip was implemented in a 65-nm CMOS process. The output power of the VCO covers 219–238 GHz frequency band (8.35% tuning range) and delivers 3.4-dBm maximum output power. The minimum measured phase noise is ?105.8 dBc/Hz (at 10-MHz offset) while consuming 195 mW from a 1.5-V supply.
关键词： standing wave,low-loss,THz,wideband,frequency tuning,Compact structure,millimeter-wave (mm-Wave),voltage-controlled oscillator (VCO),mm-wave/terahertz (THz) power generation,harmonic oscillator,varactor-less
更新于2025-09-12 10:27:22
-
Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14