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990 nm High-power High-beam-quality DFB Laser With Narrow Linewidth Controlled By Gain-coupled Effect
摘要： High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05 °, the beam quality factor M 2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
关键词： narrow linewidth,Single-longitudinal mode,Gain-coupled DFB,Semiconductor lasers
更新于2025-11-28 14:24:03
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Optimization of Temperature Dependence of Heteronanolaser Threshold Current with Account for the Thickness and Dielectric Properties of the Heterostructure Waveguide Nano-Layer Material
摘要： An exact problem of the electromagnetic wave propagation in a multilayer heteronanostructure with complex values of the dielectric constant (permittivity) is solved. The contribution to the refractive index of an additive to the dielectric constant due to the injected carriers is taken into account. A heterostructure based on a nanosystem used for the manufacture of lasers in the range 0.94–1.14 μm is considered. The methods and approaches used are also applicable for optimizing multilayer structures based on other solid solutions and those with several quantum wells. Based on the calculations of the temperature dependence of the radiation characteristics of injection lasers based on heteronanostructures, it was shown that the anomalous behavior of the temperature dependence of the threshold current is associated with a weakening of the waveguide properties of their active region. In accordance with the calculation results, the heteronanotructures parameters of injection lasers were optimized with respect to the thickness and dielectric properties of the waveguide nanolayer material, which made it possible to significantly reduce the temperature dependence of their radiative characteristics.
关键词： solid solution,threshold current,optimization of the heterostructure parameters,local gain,mode gain,injection lasers,optical waveguide,heteronanostructure,quantum-well heterostructures
更新于2025-09-23 15:21:01