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Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide
摘要： Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ~1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm-1 at a bias voltage of -8V with an excellent uniform extinction ratio of ~15 dB across the wavelength range of operation (1460-1620 nm). The effect of temperature on electro-absorption (EA) measurement suggest a strong influence resulting in merging of two major change of absorption spectrum peaks with higher temperature. Furthermore, electro-optic measurements indicate a change in refractive index and its efficiency values of ~2.9×10-4 and ~0.5×10-4 V-1, respectively, hence exhibiting a low chirping factor of 0.9 and 1.5 at bias voltages of -2 V and -4 V, respectively. As a quasi-three-dimensionally confined structure possessing both quantum well- and quantum dot-like features, the quantum dash waveguide showed superior electro-absorption and electro-optic properties compared to quantum dots and close to that of quantum wells, while attaining low chirp and broad wavelength range of operation. This paves a way for potential realization of quantum dash-based EA and electro-optic modulator for future optical access networks, particularly operating in wide C- to L-band region.
关键词： quantum-dot,modulators,electro-optic,electro-absorption,Quantum-dash
更新于2025-09-23 15:19:57
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Relative limitations of increasing the number of modulation levels in computer generated holography
摘要： Phase and amplitude spatial light modulators (SLMs) capable of both binary and multi-level modulation are widely available and offer a wide range of technologies to choose from for holographic applications. While the replay fields generated with multi-level phase-only SLMs are of a significantly higher quality than those generated by equivalent binary phase-only SLMs, evidence is presented in this letter that this improvement is not as marked for amplitude SLMs, where multi-level devices offer only a small benefit over their binary counterparts. Heuristic and numerical justifications for this are discussed and conclusions drawn.
关键词： Computer generated holography,Amplitude holography,Phase holography,Spatial light modulators
更新于2025-09-19 17:13:59
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Efficient Alla??Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures
摘要： All-optical modulators are attracting significant attention due to their intrinsic perspective on high-speed, low-loss, and broadband performance, which are promising to replace their electrical counterparts for future information communication technology. However, high-power consumption and large footprint remain obstacles for the prevailing nonlinear optical methods due to the weak photon–photon interaction. Here, efficient all-optical mid-infrared plasmonic waveguide and free-space modulators in atomically thin graphene-MoS2 heterostructures based on the ultrafast and efficient doping of graphene with the photogenerated carrier in the monolayer MoS2 are reported. Plasmonic modulation of 44 cm?1 is demonstrated by an LED with light intensity down to 0.15 mW cm?2, which is four orders of magnitude smaller than the prevailing graphene nonlinear all-optical modulators (≈103 mW cm?2). The ultrafast carrier transfer and recombination time of photogenerated carriers in the heterostructure may achieve ultrafast modulation of the graphene plasmon. The demonstration of the efficient all-optical mid-infrared plasmonic modulators, with chip-scale integrability and deep-sub wavelength light field confinement derived from the van der Waals heterostructures, may be an important step toward on-chip all-optical devices.
关键词： all-optical plasmonic modulators,graphene plasmon,van der Waals heterostructures,2D materials
更新于2025-09-19 17:13:59
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Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide
摘要： One crucial component in optical communication systems is the optical modulator. It links between the electric and optical domains as it transforms the electric signal into an optical stream. Electro-optical modulation is a very popular scheme. Recently, indium tin oxide (ITO) has been intensively used in optical modulators due to its epsilon-near-zero characteristics. A silicon electro-optic ring resonator modulator is proposed in terms of the outspread application of ITO. An extinction ratio of about 14 dB as well as an insertion loss of 0.075 dB are achieved at a standard telecommunication wavelength of 1.55 microns. The design has low losses, high efficiency, and compact size.
关键词： silicon nanophotonics,ring resonators,indium tin oxide,electro-optical modulators,integrated photonics
更新于2025-09-19 17:13:59
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[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Simultaneous generation of laser sources in S, C and L bands through four-wave mixing of electro-optic frequency combs
摘要： Increasing bandwidth demands necessitate the use of several carriers in wavelength division multiplexing. Conventionally, carrier wavelengths were generated by individual lasers which suffer from large area and power requirements with scaling of number of carriers. We demonstrate simultaneous generation of over 316 wavelengths in S, C and L bands from two lasers spaced 4 nm apart in the C-band. Electro-optic modulators initially scale each laser to 9 lines (in 20 dB bandwidth). The electro-optic frequency combs are power scaled to ~800 mW and undergo cascaded four-wave mixing in highly nonlinear fiber to generate wavelengths in the three bands. The number of lines in 20 dB bandwidth in S, C and L bands are 88, 160 and 68 respectively. This system can also be used for RF arbitrary waveform generation.
关键词： four-wave mixing,electro-optic modulators,wavelength division multiplexing,highly nonlinear fibers
更新于2025-09-19 17:13:59
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ZnS Nanospheres for Optical Modulator in an Erbiuma??Doped Fiber Laser
摘要： Zinc sulfide (ZnS), which belongs to transition metal monochalcogenides, is a semiconductor material with wide direct band gap. It can potentially show some special applications (such as luminescence, phosphor, sensors, infrared window materials, photocatalysis) by changing the morphology, size, and crystal structure of semiconductor materials. However, ZnS nanospheres have not been studied as optical modulators until now. Herein, ZnS nanospheres are synthesized by the hydrothermal method and are used to realize optical modulators in an Er-doped fiber laser. The evanescent field effect is utilized to incorporate the ZnS nanospheres on a tapered fiber. Furthermore, with the increase in pump power, the modulation interval gradually decreases to a minimum of 34.36 ns corresponding to the modulation frequency of 29.1 MHz, which is the highest modulation frequency to our knowledge in a ring cavity all-fiber laser. These results demonstrate ZnS nanospheres together with the interaction of dispersion and nonlinearity in optical fibers can modulate the proposed lasers. This not only provides a new method for controlling the power and frequency of all optical modulators, but also marks an important step for ZnS materials in optics research and device applications.
关键词： optical modulators,nonlinear optical materials,ring cavity fiber lasers
更新于2025-09-19 17:13:59
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A compact 120??GHz monolithic silicon-on-silica electro-optic modulator
摘要： A novel electro-optic modulator using the silicon-on-silica platform is proposed. The modulator utilizes a modified version of the gate-all-around switching mechanism which is well-known in MOSFET transistors. The waveguide silicon core is surrounded by oxide and metal to increase the effect of the applied voltage in charge depletion and accumulation and hence the optical phase shift. The modulator features a very high switching speed of 120 GHz, thanks to its very low capacitance, with a total insertion loss of 4.6 dB and a phase-shifter length of 500 μm. The proposed modulator can therefore serve in high speed applications such as the backbone circuits of the new 5G telecommunications networks.
关键词： Integrated optics,Electro-optic modulators,Silicon photonics
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Quantum Phenomena in the Electrodynamics of Nanoplasmonic Structures
摘要： In this paper, we investigate electrical crosstalk in integrated Mach-Zehnder modulator arrays based on n-doped InP substrate and show that it can be the cause for transmitter performance degradations. In particular, a common ground return path between adjacent modulators can cause high coupling noise up to ?20 dB which leads to system power penalties of more than 10 dB at 10 Gb/s OOK modulation. Furthermore, we demonstrate that electrical crosstalk is significantly reduced in the absence of the shared ground and that it varies with modulator separation distance. Experimental results are shown that indicate a crosstalk tolerance of ?40 dB for 1 dB power penalty at 10 Gb/s.
关键词： Integrated modulators,photonic integrated circuits
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Slow Light to Reduce the Energy Dissipation of Mach-Zehnder Modulators in Silicon Photonics
摘要： Integrated Mach-Zehnder (MZ) modulators are important components in silicon photonic devices that rely on a reverse-biased p-n junction to modulate the optical signal via a change of the waveguide refractive index. Reducing their energy consumption is a crucial step towards the application of silicon photonics, especially in connection with the growing traffic volumes in data centers. In this work, we combine band-edge slow light structures consisting of silicon grating waveguides with periodic (interlaced) p-n junctions to maximize spatial matching between the optical field mode and the depletion region of the p-n junction. The two effects together will result in an improved modulation efficiency, leading to a strongly reduced energy dissipation per bit.
关键词： Energy Dissipation,Silicon Photonics,Slow Light,Mach-Zehnder Modulators
更新于2025-09-16 10:30:52
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<i>(Keynote)</i> Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
摘要： In this work, we present recent results on the hybrid integration of electro-optical organic materials in a photonic integrated circuit (PIC) technology. We review some of the identified challenges regarding process compatibility and present preliminary results on the integration of organic materials in a PIC technology using a 0.25 μm SiGe BiCMOS pilotline. Here, we are focusing on electro-optical applications towards high-speed modulators with ultra-low energy consumption.
关键词： Ultra-Low Energy Consumption,Silicon-Organic Hybrid Photonics,Electro-Optical Polymers,High-Speed Modulators,Photonic Integrated Circuit
更新于2025-09-16 10:30:52