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Optical properties of metamorphic type-I InAs <sub/> 1? <i>x</i> </sub> Sb <sub/><i>x</i> </sub> /Al <sub/><i>y</i> ? </sub> In <sub/> 1? <i>y</i> ? </sub> As quantum wells grown on GaAs for the mid-infrared spectral range
摘要： We analyse the optical properties of InAs1?xSbx/Aly In1?y As quantum wells (QWs) grown by molecular beam epitaxy on relaxed Aly In1?y As metamorphic buffer layers (MBLs) using GaAs substrates. The use of Aly In1?y As MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths >3 μm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature PL up to 3.4 μm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission (SE), using a theoretical model based on an eight-band k·p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1?xSbx/Aly In1?y As metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.
关键词： light-emitting diode,k·p modelling,metamorphic heterostructure,mid-infrared,semiconductors,molecular beam epitaxy,photonics
更新于2025-09-23 15:19:57
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Effect of surface modification and laser repetition rate on growth, structural, electronic and optical properties of GaN nanorods on flexible Ti metal foil
摘要： The effect of flexible Ti metal foil surface modification and laser repetition rate in laser molecular beam epitaxy growth process on the evolution of GaN nanorods and their structural, electronic and optical properties has been investigated. The GaN nanostructures were grown on bare- and pre-nitridated Ti foil substrates at 700 °C for different laser repetition rates (10–30 Hz). It is found that the low repetition rate (10 Hz) promotes sparse growth of three-dimensional inverted-cone like GaN nanostructures on pre-nitridated Ti surface whereas the entire Ti foil substrate is nearly covered with film-like GaN consisting of large-sized grains for 30 Hz growth. In case of the GaN growth at 20 Hz, uniformly-aligned, dense (～8 × 109 cm?2) GaN nanorods are successfully grown on pre-nitridated Ti foil whereas sparse vertical GaN nanorods have been obtained on bare Ti foil under similar growth conditions for both 20 and 30 Hz. X-ray photoemission spectroscopy (XPS) has been utilized to elucidate the electronic structure of GaN nanorods grown under various experimental conditions on Ti foil. It confirms Ga–N bonding in the grown structures, and the calculated chemical composition turns out to be Ga rich for the GaN nanorods grown on pre-nitridated Ti foil. For bare Ti substrates, a preferred reaction between Ti and N is noticed as compared to Ga and N leading to sparse growth of GaN nanorods. Hence, the nitridation of Ti foil is a prerequisite to achieve the growth of dense and aligned GaN nanorod arrays. The X-ray diffraction, high resolution transmission electron microscopy and Raman studies revealed the c-axis growth of wurtzite GaN nanorods on Ti metal foil with good crystallinity and structural quality. The photoluminescence spectroscopy showed that the dense GaN nanorod possesses a near band edge emission at 3.42 eV with a full width at half maximum of 98 meV at room temperature. The density-controlled growth of GaN nanorods on a flexible substrate with high structural and optical quality holds promise for potential applications in futuristic flexible GaN based optoelectronics and sensor devices.
关键词： Ti metal foil,laser molecular beam epitaxy,optical properties,GaN nanorods,structural properties,surface modification,electronic properties,laser repetition rate
更新于2025-09-23 15:19:57
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Bayesian Optimization of Terahertz Quantum Cascade Lasers
摘要： We use Bayesian optimization algorithms in combination with a nonequilibrium Green’s function transport model to increase the maximum operating temperature of terahertz quantum cascade lasers. This procedure lead to the recent temperature record of 210 K in terahertz quantum cascade lasers, and here we provide even-further-improved structures. The Bayesian optimization algorithm, which takes into account all the available history of the optimization, converges much faster and more securely than the commonly used genetic algorithm. Designs based on two and three wells per period are considered, and using the large amount of data generated, we systematically evaluate the studied schemes in terms of optimal extraction energy and relevance of electron-electron correlations. This analysis shows that the two-well scheme is superior for reaching high operating temperatures, while the three-well scheme is more robust to variations in layer thicknesses. Furthermore, we study the sensitivity to ?ux-rate ?uctuations during growth and simulation-model inaccuracies, showing the period thickness needs to be controlled to within a few percent, which is challenging but achievable with present-day molecular-beam epitaxy. These limits to the growth accuracy can be a guiding principle for experimentalists, along with the suggestion to fabricate devices across the wafer radius so as to ?nd the optimal period thickness.
关键词： Bayesian optimization,electron-electron correlations,nonequilibrium Green’s function,terahertz quantum cascade lasers,molecular-beam epitaxy
更新于2025-09-23 15:19:57
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Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
摘要： Epitaxial growth of III-V heterostructures on non-native substrates such as Silicon (Si) or Germanium (Ge) is one of the promising research topics for the last two decades. The interface between polar III-V semiconductors and non-polar substrates (Si or Ge) plays a crucial role in monolithic integration. However, there is an anticipation of epitaxial GaAs growth on Ge substrate because of the lower mismatch of lattice constants and thermal expansion coefficients between them. Therefore, the high-quality growth of III-V semiconductor heterostructures on Ge substrates would overcome the impediment to Si-photonics, where the monolithic integration of optoelectronic device structures can be done using a Ge graded layer on Si. Here, we have explored the epitaxial growth of multi-layer InGaAs/GaAs quantum dot heterostructures on Ge substrates and compared the optical and structural properties with the QDs grown on GaAs substrate. The optical properties of all samples are investigated with the help of photoluminescence (PL) and time-resolved photoluminescence (TRPL), whereas the morphology of the QDs is observed through cross-sectional transmission electron microscopy (XTEM) images. An enhancement in the optical characteristics (PL peak wavelength, activation energy, carrier lifetime) is found for the QDs grown on Ge substrate with the super-lattice buffer (SLB) layer. The minimization of defects and dislocations in the heterostructure is also realized for the structure with the SLB layer. Furthermore, a two-fold enhancement in PL intensity and 24 meV increment in activation energy is achieved through ex-situ H ion-implantation, which approached the values obtained for the QD heterostructure grown on GaAs substrate.
关键词： Photoluminescence,Molecular beam epitaxy,Time-resolved photoluminescence,Silicon photonics,Quantum dots,Ion implantation
更新于2025-09-23 15:19:57
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A high throughput, linear molecular beam epitaxy system for reduced cost manufacturing of GaAs photovoltaic cells: will GaAs ever be inexpensive enough?
摘要： Solar cells based on GaAs and related compounds provide the highest reported efficiency single junction and multijunction solar cells. However, the cost of the cells is prohibitive when compared with Si and other thin film solar technologies. One significant differentiator is the high cost required to grow the epitaxial layers. Here, we propose a molecular beam epitaxy (MBE) system design that has the potential to increase the epitaxial layer growth throughput, thereby significantly reducing production costs. A rack-and-pinion based linear transfer system sequentially transfers multiple substrate platens between interconnected growth positions within the chamber, thereby synchronously growing layers on many wafers in the desired order and at the required thicknesses. The proposed linear MBE platform is the basis for a realistic analysis of GaAs single junction photovoltaic cell production cost. Our model projects a nearly 55% cost reduction in epitaxial growth via linear MBE when compared to conventional MBE, and a 85% reduction when further process optimization is assumed and combined with non-destructive lift off. Even when considering all of these factors in an optimistic light, the cost of epitaxial unconcentrated GaAs solar cells using any existing growth process is unlikely to drop below $3 per Wp in the foreseeable future.
关键词： photovoltaic cells,GaAs,molecular beam epitaxy,linear MBE,cost reduction
更新于2025-09-23 15:19:57
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Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice
摘要： An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.
关键词： superlattice,quantum well,molecular beam epitaxy,vertical-cavity surface-emitting laser,heterostructure,active area
更新于2025-09-23 15:19:57
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Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers
摘要： Herein we report the studies on the GaBiAs terahertz emitters. The molecular beam epitaxy grown thin films were subjected to structural and optical characterization. Inhomogeneity of Bi concentration in the samples is confirmed by XRD, PL and EDS studies. Investigations on the generation characteristics of the fabricated bow-tie photoconductive antennas were carried out via the Fourier Transform Infrared Spectroscopy. The collected data indicate a pattern of change in the shape of the spectra with increasing bismuth concentration, namely, a sharp drop in the low-frequency part (0.1–0.2 THz) simultaneously with a noticeable increase in intensity in the range 0.3–1 THz with a pronounced maximum at frequencies of ~0.4 THz. The deterioration of the THz power to average photocurrent ratio can be explained by a general decrease in the electron mobility, caused both by a large number of structural defects and by a large local heating of the crystal.
关键词： terahertz emitters,photoconductive antennas,molecular beam epitaxy,GaBiAs,Fourier Transform Infrared Spectroscopy
更新于2025-09-23 15:19:57
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Growth of Ag(1?1?1) on Si(1?1?1) with nearly flat band and abrupt interface
摘要： Growth of Ag films of up to 30 nm thickness on Si(1 1 1) 7 × 7 at room temperature is investigated by low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). LEED revealed the coexistence of Ag and Si spots starting with 1 monolayer (ML) of Ag deposited. The Ag lattice constant, starting with 25 ML, is slightly higher than for bulk Ag and increase linearly with Ag thickness, reaching about 4.2 nm for the thickest films. The average terrace widths detected from LEED spot profile analysis are about 30 nm for clean Si(1 1 1) 7 × 7 and about 5.5 nm for the thickest Ag(1 1 1) film, in agreement with STM observations. The intensity variation of core levels analyzed by XPS is taken into account by a model assuming the initial formation of Ag islands with linear variation of coverage vs. the amount of Ag deposited, followed by growth in a quasi layer-by-layer mode. The interface barrier is in the range of 0.4 eV, lower than all values reported previously. Ag deposited on Si(1 1 1) 7 × 7 at room temperature provides flat Ag(1 1 1) for synthesis of 2D materials, and may be used for low barrier Schottky diodes.
关键词： Scanning tunneling microscopy,Low energy electron diffraction,X-ray photoelectron spectroscopy,Ag/Si(1 1 1),Molecular beam epitaxy,Surface barrier height
更新于2025-09-23 15:19:57
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Editors' Choice—Optical Emission from Germanium Nanocrystals
摘要： We analyze the intense photoluminescence (PL) observed at energies from 600 to 1100 meV for a large number of Si1-xGex epitaxial layers grown by molecular beam epitaxy. In the present work we show that this previously unexplained broad PL peak can be assigned to Ge nanocrystals (NCs) self-assembled within the SiGe layers. These NCs are assumed to be lattice matched to the SiGe in the vertical, growth direction. A consequence of this assignment is that as the Ge-fraction in the SiGe layer increases the vertical strain in the NCs changes from compressive to tensile at x ～ 0.36, lowering the NC bandgap (BG) below that of bulk Ge. We examine the PL results for more than 60 samples exhibiting this broad PL peak by examining how it follows the strained Ge BG for x from 0.05 to 0.53. The PL is resolvable as two narrower peaks separated by the momentum conserving phonon energy for Ge. Strain and con?nement shifted NC bound exciton energies calculated numerically agree well with the measured ones. When Raman scattering results were examined for some of the same samples, the phonon mode frequencies obtained provided valuable corroborative evidence for the presence of the Ge NCs.
关键词： molecular beam epitaxy,SiGe epitaxial layers,Raman spectroscopy,Germanium nanocrystals,photoluminescence
更新于2025-09-23 15:19:57
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Growth mode in heteroepitaxial system from nano- and macro- theoretical viewpoints
摘要： Growth mode in semiconductor heteroepitaxial system such as InAs/GaAs is systematically investigated from nano- and macro-theoretical viewpoints, where ab initio, empirical interatomic potential, and phenomenological macroscopic theory are used. The nanoscopic theories clarify that the misfit dislocation (MD) formation energy depends on orientation such as 1.14 eV/? for (001), 0.96 eV/? for (110), and 0.68 eV/? for (111)A. On the basis of these calculated results, growth mode boundary between two-demensional with MD formation (2D-MD) and three-dimensional Stranski-Krastanov island (3D-SK) growth modes is successfully determined as funcions of surface energy and degree of strain relaxation. The region of 3D-SK growth mode is the largest for (001) while (111)A has the largest 2D-MD region and that for (110) is in between. Using surface energy obtained by ab initio calculations and the degree of strain relaxation estimated by continuum elasticity theory, it is found that (001) favors the 3D-SK growth mode while 2D-MD growth mode appears for (110) and (111)A. It shoud be noted that the (110) data stay near the growth mode boundary between 3D-SK and 2D-MD growth modes. Reflecting this, growth mode transition from 3D-SK to 2D-MD occurs for (110) due to In0.25Ga0.75As layer insertion at the interface that decreases surface energy from 50.9 meV/?2 to 49.1 meV/?2. Versatility of this approach is discussed by comparing with experimental findings.
关键词： A1 Computer simulation,A1 Growth models,B2 Semiconducting indium compounds,A3 Molecular beam epitaxy,A1 Surface structure
更新于2025-09-19 17:15:36