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[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - A Unit-Cell Discontinuous Galerkin Scheme for Analyzing Plasmonic Photomixers
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： zinc oxide,dc switch,Cutoff frequency,pulse measurements,gate charge,monolithic ICs,RF switch,ionic semiconductors,thin-film transistors (TFTs)
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - Seoul, Korea (South) (2019.10.27-2019.11.2)] 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - A Neural Network for Detailed Human Depth Estimation From a Single Image
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： monolithic ICs,pulse measurements,zinc oxide,gate charge,dc switch,ionic semiconductors,RF switch,thin-film transistors (TFTs),Cutoff frequency
更新于2025-09-19 17:13:59