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Single photon detection with SiPMs irradiated up to 1014?cm?2 1-MeV-equivalent neutron fluence
摘要： Silicon photomultipliers (SiPM) are solid state light detectors with sensitivity to single photons. Their use in high energy physics experiments, and in particular in ring imaging Cherenkov (RICH) detectors, is hindered by their poor tolerance to radiation. At room temperature the large increase in dark count rate makes single photon detection practically impossible already at 1011 cm?2 1-MeV-equivalent neutron fluence. The neutron fluences foreseen by many subdetectors to be operated at the high luminosity LHC range up to 1014 cm?2 1-MeV-equivalent. In this paper we present the effects of such high neutron fluences on Hamamatsu and SensL SiPMs of different cell size. The advantage of annealing at high temperature (up to 175?C) is discussed. We demonstrate that, after annealing, operation at the single photon level with a SiPM irradiated up to 1014 cm?2 1-MeV-equivalent neutron fluence is possible at cryogenic temperature (77 K) with a dark count rate below 1 kHz.
关键词： Cryogenic temperature,Radiation damage,Single photon detection,SiPM,Neutron irradiation,Annealing
更新于2025-09-23 15:22:29
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Effect of neutron irradiation on the structural, electrical and optical properties evolution of RPLD VO2 films
摘要： This study reports on the effect of neutron irradiation at different fluences on the properties of VO2 thin films. The irradiations were performed at NUR research reactor, Algiers at a temperature of about 40 °C, with fast neutron fluence (En > 1 MeV) up to 1.9 × 1018 n.cm?2. The induced defects have been investigated using structural, optical and electrical measurements. Both bulk sensitive characterization techniques, Raman and grazing incident angle X-ray diffraction (GIXRD) analysis, show that no structural transformation is induced by neutron irradiation, although strain induced defect production are generated throughout the films while surface sensitive techniques, X-ray photoelectron spectroscopy (XPS) and work function measurements, show that the charge carrier (electron) concentration at room temperature decreases after irradiation. Potentially due to fast neutron irradiation induced defects, mainly in the form of Frenkel pairs, swelling and color center formation occurs in VO2 thin films without amorphization. This is further corroborated by an increase of the room temperature resistivity through the irradiated films. Temperature-dependent electrical and optical transmission measurements confirm that the characteristic semiconductor-to-metal transition of the VO2 films is preserved upon irradiation. We therefore conclude that VO2 is an excellent candidate for thermal shielding and thermal management of small satellites.
关键词： Smart radiator device,Vanadium dioxide,Neutron irradiation,Phase transition,Pulsed laser deposition
更新于2025-09-19 17:15:36
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Radiology, Lasers, Nanoparticles and Prosthetics || 2. Nuclei and isotopes
摘要： In Chapters 5 to 12 nuclear methods in medicine are discussed either for imaging (scintigraphy, SPECT, PET) or for radiation treatment of cancerous tissues (proton and neutron irradiation, brachytherapy). It is therefore appropriate to first introduce some basic properties of nuclides and isotopes, and in particular of radioactive isotopes which are used in nuclear medicine. This chapter is not intended to replace a textbook on nuclear physics. But it provides sufficient background information for better understanding the subsequent chapters. Handling of radiation in general and application of radioactive isotopes also requires a detailed knowledge of radiation dose and radiation safety, which are topics of Chapter 4.
关键词： scintigraphy,medicine,SPECT,neutron irradiation,PET,brachytherapy,radiation safety,proton irradiation,nuclides,cancerous tissues,isotopes,radioactive isotopes,radiation dose,imaging,nuclear medicine,nuclear methods,radiation treatment
更新于2025-09-19 17:13:59
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Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
摘要： The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation.
关键词： radiation resistance,nonequilibrium processes,γ-neutron irradiation,microwave transistors,semiconductor structures
更新于2025-09-09 09:28:46
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Stored energy release in neutron irradiated silicon carbide
摘要： The purpose of this investigation is to experimentally quantify the stored energy release upon thermal annealing of previously irradiated high-purity silicon carbide (SiC.) Samples of highly-faulted poly-crystalline CVD b-SiC and single crystal 6HeSiC were irradiated in a mixed spectrum ?ssion reactor near 60 (cid:1)C in a ?uence range from 5 (cid:3) 1023 to 2 (cid:3) 1026 n/m2 (E > 0.1 MeV), or about 0.05e20 dpa, in order to quantify the stored energy release and correlate the release to the observed microscopic swelling, lattice dilation, and microstructure as observed through TEM. Within the ?uence of this study the crystalline material was observed to swell to a remarkable extent, achieving 8.13% dilation, and then cross a threshold dose for amorphization at approximately 1 (cid:3) 1025 n/m2 (E > 0.1 MeV) Once amorphized the material attains an as-amorphized swelling of 11.7% at this irradiation condition. Coincident with the extraordinary swelling obtained for the crystalline SiC, an equally impressive stored energy release of greater than 2500 J/g at the critical threshold for amorphization is inferred. As expected, following amorphization the stored energy in the structure diminishes, measured to be approximately 590 J/g. Generally, the ?ndings of stored energy are consistent with existing theory, though the amount of stored energy given the large observed crystalline strain is remarkable. The overall conclusion of this work ?nds comparable stored energy in SiC to that of nuclear graphite, and similar to graphite, a stored energy release in excess of its speci?c heat in some irradiation conditions.
关键词： Neutron irradiation,Amorphization,Silicon carbide,Swelling,Stored energy
更新于2025-09-04 15:30:14
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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes
摘要： To observe the neutron transmutation and displacement damage effects, Au/n-Si/Ag Schottky barrier diodes were exposed to thermal neutron irradiation. Irradiation induced changes in Schottky barrier height, saturation current, and donor concentration were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diodes. The irradiation for 10 s caused a little change in the Schottky diode parameters which were obtained from I-Vand C-V measurements. Observable changes in the parameters occurred after the second irradiation of 30 s duration. After the total dose, an increase in saturation current and barrier height inhomogeneties took into place and a decrease in carrier concentration was observed due to the carrier removal effect of thermal neutron-induced damages. Whereas the values of zero bias barrier height have little change after irradiations, the values of ideality factor increased after irradiations. The values of zero-bias barrier height for all diodes was also calculated from reverse bias current characteristics. After second dose, the values of zero-bias barrier height decreased for all diodes. The values of series resistance were determined by Cheung functions before and after irradiations. Before irradiations, the values were found between 2.10 kΩ and 2.76 kΩ. After second dose, the values of series resistance of all diodes decreased and were found between 1.59 kΩ and 2.20 kΩ. Furthermore, the proof of thermal neutron transmu- tation of elements in the devices was given via energy dispersive spectroscopy (EDS) mapping.
关键词： Semiconductor device radiation effects,Schottky diode,Electrical characterization,EDS mapping,Silicon,Thermal neutron irradiation
更新于2025-09-04 15:30:14