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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Monolithic Amplifier Based on a Chirally-Coupled-Core Fiber
摘要： Amorphous indium–gallium–zinc oxide (a-IGZO) thin-?lm transistor nonvolatile memory devices with an IGZO charge storage layer were evaluated for the ?rst time for multi-level cell memory applications. The pristine device was de?ned as the original state (OS), which can be switched to the programmed state (PS) after a positive gate voltage pulse (for example, 12 V for 10 ms), and to the erased state (ES) after a negative gate voltage pulse (for example, ?15 V for 10 ms). The writing mechanism was attributed to Fowler–Nordheim tunneling of electrons from the channel to the charge storage layer under a positive gate bias and inverse tunneling under a negative gate bias. The devices demonstrated superior electrical programmable and erasable characteristics. A memory window of 2.4 V between OS and PS was maintained after 100 programming/erasing cycles, and a memory window of 2.66 V between OS and ES as well. The memory windows relative to OS are equal to 1.91 and 1.30 V for PS and ES, respectively, for a retention time of 105 s.
关键词： thin-?lm transistor,In-Ga-Zn-O,nonvolatile memory,multi-level cell
更新于2025-09-19 17:13:59
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Highly Stable and Flexible Memristive Devices Based on Polyvinylpyrrolidone: WS2 Quantum Dots
摘要： Tungsten disulfide (WS2) quantum dots (QDs) embedded in polyvinylpyrrolidone (PVP) based flexible memristive devices were prepared, and those devices exhibited typical bistable electrical switching and remarkable nonvolatile memristive behaviors. Maximum electricity on/off ratio obtained from the current–voltage (I-V) curves of the device is close to 104. the set voltage of the device is +0.7 V, which effectively reduced the energy consumption. The retention times extracted from data for the devices were as large as 1 × 104 s, which points to these devices having nonvolatile characteristics. Moreover, the highly flexible characteristics of the devices were demonstrated by bending the devices. The carrier transport mechanisms were explained by fitting the I-V curves, and possible operating mechanisms of the devices can be described based on the electron trapping and detrapping processes. WS2 QDs uniformly dispersed in pure transparent N, N-Dimethylformamide (DMF) were obtained by using ultrasonication and a hydrothermal process in this work.
关键词： memristive devices,nonvolatile memory,polyvinylpyrrolidone,WS2 quantum dots,flexible electronics
更新于2025-09-19 17:13:59
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MXene Quantum Dot/Polymer Hybrid Structures with Tunable Electrical Conductance and Resistive Switching for Nonvolatile Memory Devices
摘要： Low-dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD-based electronics is reported. Monodisperse MQDs are prepared by using a one-step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD-PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write-once-read-many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.
关键词： resistive switching,MXene quantum dots,charge trapping,flash memory,nonvolatile memory,write-once-read-many memory
更新于2025-09-12 10:27:22
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An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects
摘要： Phase change memory (PCM) offers promising features such as high speed, non-volatility for ‘universal memory’, however, achieving low-power RESET process in sub-ns timescale is a key challenge. In this study, we display a trade-off between speed and power to enable an ultrafast (sub-ns) and yet, low-power (sub-mW) RESET operation in a nanoscale pore-type Ge2Sb2Te5 (GST) PCM device by means of the choice of electrode materials and their interface effects on a well-designed device architecture using TCAD simulation. The miniaturized device with 20 nm contact diameter (CD) is investigated by employing three different bottom electrode materials, namely TiAlN, TiW and TiN, where the latter is found to be efficient for low-power RESET (159 μW) using a pulse-length of 40 ns showing 63% and 44% power reduction as compared to TiW and TiAlN respectively. A strong interface effect that has been considered between GST/TiN and GST/SiO2 helps to achieve low-power RESET operation. Furthermore, low-energy RESET is realized using ultrafast (400 ps) pulse with IRESET of 529 μA leads to ~100x reduction in energy consumption (578 fJ). Moreover, an extremely fast RESET operation in 200 ps is displayed by the simulated device with TiN and TiAlN electrode materials. Hence, our simulation results of ultrafast (200 ps), ultralow-energy (578 fJ) and low-power (159 μW) RESET process with the significant role of interface effects would be highly useful towards designing ultralow-energy PCM device for future electronics.
关键词： thermal boundary resistance,phase-change memory,Nonvolatile memories,RESET energy
更新于2025-09-11 14:15:04
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Gyrotropic slab waveguide coupled silica microfiber-based magnetic field sensor
摘要： By controlling the polarization direction of BaTiO3 (BTO) layer, the nonvolatile and reversible resistive switching behavior of the BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) layered heterostructure have been observed. Pulsed laser deposition (PLD) technique was used to prepare it on the (001) oriented single-crystal SrTiO3 (STO) substrate, and its magnetic and electric properties were studied. Moreover, the change of the resistivity and metal-insulator transition temperature (TMI) for the LSMO layer were found to be induced by the switching of the electric field direction. The resistivity is decreased while the TMI is increased for the accumulation state of hole carriers when a negative electric field is applied to the BTO layer. By contrast, the resistivity is increased while the TMI is decreased for the depletion state of hole carriers when a positive electric field is applied to the BTO layer. This result indicates a nonvolatile and reversible resistive switching behavior in the multiferroic heterostructure control through the external electric field on ferroelectric layer, which provides a platform to develop unique electronic devices, such as nonvolatile random-access memories, sensors and memristive devices, etc.
关键词： multiferroic heterostructure,resistive switching behavior,pulsed laser deposition,nonvolatile random-access memories
更新于2025-09-11 14:15:04
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Electric-field-controllable nonvolatile multilevel resistance switching of Bi <sub/>0.93</sub> Sb <sub/>0.07</sub> /PMN-0.29PT(111) heterostructures
摘要： Electric-field switchable multilevel nonvolatile resistance states are achieved at room temperature in Bi0.93Sb0.07/0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3(111) (PMN-0.29PT) heterostructures. During the initial poling of the PMN-0.29PT, the variation of the resistance of the Bi0.93Sb0.07 film with the electric field tracks the variation of the electric-field-induced in-plane strain of the PMN-0.29PT effectively, revealing that the resistance switching is dominated by the ferroelectric-domain-switching-induced lattice strain but not the domain-switching-induced polarization charges. A relative resistance change DR/R ≈ 7% at 300 K and up to ≈10% at 180 K were achieved near the coercive field EC of the PMN-0.29PT(111) substrate. At least five stable resistance states with good endurance properties could be obtained at room temperature by precisely controlling the electric-field pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-0.29PT to the film, providing a simple and energy efficient way to construct multistate resistive memory.
关键词： Bi0.93Sb0.07/PMN-0.29PT(111) heterostructures,nonvolatile,multilevel resistance switching,ferroelectric-domain-switching-induced lattice strain,electric-field
更新于2025-09-10 09:29:36
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Organic and hybrid resistive switching materials and devices
摘要： The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.
关键词： flexible electronics,organic materials,resistive switching memories,nonvolatile storage,hybrid materials
更新于2025-09-09 09:28:46
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Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
摘要： Floating-gate based organic ?eld-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular ?oating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the ?oating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated ?oating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of 640 V, at an optimized condition.
关键词： organic transistor,nonvolatile memory,fullerene,tunneling layer,molecular floating-gate,tetratetracontane
更新于2025-09-04 15:30:14
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Correlation between Ni valence and resistance modulation on SmNiO <sub/>3</sub> chemical transistor
摘要： The resistance modulation under various gate voltage (Vg) application conditions was systematically studied for a chemical field effect transistor (FET) composed of a SmNiO3 (SNO) film channel and an ionic liquid gate insulator. The channel resistance of the SNO chemical FET changed nonlinearly over a wide range for different temperatures, Vg magnitudes, and Vg application durations. The correlation between the modulated resistance and the Ni valence state was quantitatively revealed using X-ray photoelectron spectroscopy. A model describing the resistance change with the Vg application conditions was proposed by considering the kinetics of the reduction reaction on the SNO channel. This model enables the resistance to be predicted for given Vg application conditions, and selective resistance modulation over a wide range of resistances has been demonstrated.
关键词： control resistance modulation,nonvolatile,redox reaction,oxygen vacancy,Nickelate thin film
更新于2025-09-04 15:30:14