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- 2019
- microwave photonics
- optoelectronic oscillator
- frequency division
- Optoelectronic Information Science and Engineering
- Jinan University
- Charles Darwin University
- University of Ottawa
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Deep Learning for Optoelectronic Properties of Organic Semiconductors
摘要： Atomistic modeling of the optoelectronic properties of organic semiconductors (OSCs) requires a large number of excited-state electronic-structure calculations, a computationally daunting task for many OSC applications. In this work, we advocate the use of deep learning to address this challenge and demonstrate that state-of-the-art deep neural networks (DNNs) are capable of accurately predicting various electronic properties of an important class of OSCs, i.e., oligothiophenes (OTs), including their HOMO and LUMO energies, excited-state energies and associated transition dipole moments. Among the tested DNNs, SchNet shows the best performance for OTs of different sizes, achieving average prediction errors in the range of 20-80meV. We show that SchNet also consistently outperforms shallow feed-forward neural networks, especially in difficult cases with large molecules or limited training data. We further show that SchNet could predict the transition dipole moment accurately, a task previously known to be difficult for feed-forward neural networks, and we ascribe the relatively large errors in transition dipole prediction seen for some OT configurations to the charge-transfer character of their excited states. Finally, we demonstrate the effectiveness of SchNet by modeling the UV-Vis absorption spectra of OTs in dichloromethane and a good agreement is observed between the calculated and experimental spectra.
关键词： optoelectronic properties,organic semiconductors,transition dipole moment,SchNet,oligothiophenes,deep learning,UV-Vis absorption spectra
更新于2025-09-23 15:19:57
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Complexity mapping of a photonic integrated circuit laser using a correlation-dimension-based approach
摘要： Quantifying complexity from experimental time series generated by nonlinear systems, including laser systems, remains a challenge. Methods that are based on entropy, such as permutation entropy (PE), have proven to be useful tools for the relative measure of time series complexity. However, the numerical value of PE is not readily linked to a specific type of dynamical output. Thus, the quest to calculate quantitatively meaningful fractal dimension values, such as the correlation dimension (CD), from experimental signals, is still important. A protocol for calculating minimum gradient values and their spread, an integral part of CD analysis, is used here. Minimum gradient values with small spread are presented as approximate CD values. Here-in we report mapping these values, derived from analyzing experimental time series, obtained from a 4-section photonic integrated circuit laser (PICL) across a large parameter space. The PICL is an integrated form of a semiconductor laser subject to controllable optical feedback system. The minimum gradient/approximate CD mapping shows it has some qualitatively different map regions in its dynamics as compared to a free-space-based equivalent system. We show that the minimum gradient values give insight into the dynamics even when approximate CD values cannot be determined. The agreement between the qualitative features of permutation entropy mapping and minimum gradient/approximate CD value mapping provides further support for this. Regions of time series with close to periodic and quasi-periodic dynamics are identifiable using minimum gradient value maps.
关键词： semiconductor lasers,integrated optoelectronic devices,nonlinear dynamics,complex systems,Chaos,complexity
更新于2025-09-23 15:19:57
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Microwave-assisted particle size-controlled synthesis of ZnO nanoparticles and its application in fabrication of PLED device
摘要： ZnO nanoparticles were synthesised in diethylene glycol (DEG) with different ZnO molar precursor concentration (1 mmol, 2 mmol, 4 mmol and 8 mmol) in a microwave reactor for 15 minutes up to 250 °C. Zinc acetate dihydrate was used as the precursor for ZnO nanoparticles and oleic acid as a capping agent. It was found that different mmol precursor concentration yielded in different nanoparticle sizes. The crystallinity and particle size was analysed by XRD and the optical properties of the nanoparticles were studied by UV-Vis and PL. Oleic acid forms a layer around the ZnO nanoparticle surface. This layer helps in preparing nanocomposite solution by dispersing the ZnO nanoparticles in MEH-PPV solution. Further, the nanocomposite solution is deposited as a thin-film by spin-coating and this forms the emissive layer of the fabricated PLED device. The diode characteristics were analysed by studying the I-V and EL graphs.
关键词： PLED device,ZnO nanoparticles,MEH-PPV,microwave-assisted synthesis,optoelectronic properties
更新于2025-09-23 15:19:57
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[Institution of Engineering and Technology 20th Italian National Conference on Photonic Technologies (Fotonica 2018) - Lecce, Italy (23-25 May 2018)] 20th Italian National Conference on Photonic Technologies (Fotonica 2018) - Colloidal quantum dots for optoelectronic applications: fundamentals and recent progress
摘要： In this work, we present highlights and major milestones in the field of CQDs, starting from their optical and electronic properties that can be tailored not only by the atomic composition but also by the size, shape, and surface functionalization. We will also touch on CQD synthesis, processing and assembly, emphasizing their flexibility, low cost, low temperature and scalability. We will review recent advances in the design and fabrication of optoelectronic devices based on colloidal semiconductor quantum dots, with emphasis on light emitters, detectors and solar cells. We conclude with a short discussion on the large potentialities of this new class of materials as well as the challenges that must be addressed towards solution-processed functional optoelectronic nanomaterials for their practical applications in various fields.
关键词： semiconductor nanostructures,optoelectronic devices,colloidal quantum dots
更新于2025-09-23 15:19:57
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Silicon Containing Hybrid Copolymers || Construction of Organic Optoelectronic Materials by Using Polyhedral Oligomeric Silsesquioxanes ( <scp>POSS</scp> )
摘要： Organic optoelectronic materials can be generally divided into small molecular weight semiconductors and conjugated polymers with high opto/electronic performance. This interesting electroluminescence and conducting properties were first discovered in the 1970s, but the real surge of the interest occurred in the past 20 years with significant improvements in material performance through creative material design and high material purification. Small molecular weight semiconductors are interesting because of their high purity, ordered structures, and ideal model for fundamental mechanism studies of excitons and charge carriers. Conjugated polymers are mainly used for device fabrication for their advantages of large‐area device fabrication, high performance, and multiple functions. Currently, organic materials receive considerable attention because of their successful applications in organic light‐emitting diodes (OLEDs), solar cell, liquid crystal display (LCD), thin film transistors, sensors, electrochromic devices, and many others. Thanks to the extensive academic and industrial efforts, the mechanism and the relationship between the molecular structure and optoelectronic properties have been illustrated, and various device structures have been developed. Although organic optoelectronic materials have experienced tremendous progress over the past 10 years in fundamental physics and real applications, more work is necessary such as theoretical descriptions in charge generation and transport, distinction in the contributions of various interactions, thermal stability improvement, and commercialization of existing applications. Various new phenomena are still being discovered every day and device performance is continuing to rise. Among these efforts, the incorporation of polyhedral oligomeric silsesquioxanes (POSSs) into organic optoelectronic materials to achieve improved performances has been attracting attention particularly because of the unique and interesting hybrid structures of POSS.
关键词： Electroluminescence,Organic optoelectronic materials,Polyhedral oligomeric silsesquioxanes (POSS),Liquid crystal display (LCD),Electrochromic materials
更新于2025-09-23 15:19:57
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Luminescent manganese(II) complexes: Synthesis, properties and optoelectronic applications
摘要： Luminescent manganese(II) complexes have been extensively studied owing to their excellent photophysical properties. The facile synthesis and tunable optoelectronic performance of manganese(II) complexes render them attractive candidates for developing low-cost organic light-emitting diodes, information storage and security, as well as opto-electronic switches. In this review, we focus on the material category and synthesis, luminescence process, and various luminescent properties of manganese(II) complexes, together with their applications in functional devices. Finally, the challenge and outlook on the future research for manganese(II) complexes are given.
关键词： Triboluminescence,Photoluminescence,Manganese(II) complexes,Electroluminescence,Optoelectronic devices
更新于2025-09-23 15:19:57
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MOVPE of Large-Scale MoS <sub/>2</sub> /WS <sub/>2</sub> , WS <sub/>2</sub> /MoS <sub/>2</sub> , WS <sub/>2</sub> /Graphene and MoS <sub/>2</sub> /Graphene 2D-2D Heterostructures for Optoelectronic Applications
摘要： Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.
关键词： MOVPE,WS2,MoS2,heterostructures,2D materials,graphene,optoelectronic applications
更新于2025-09-23 15:19:57
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Hybrid glass optical fibers-novel fiber materials for optoelectronic application
摘要： Hybrid glass optical fibers incorporated with optoelectronic materials and functionalities are highly anticipated for potential applications in optical communication, remote sensing, biomedicine, and nonlinear optics. However, the design and construction of hybrid glass fibers present significant challenges due to restrictions on the composition of fiber fabricated using conventional chemical vapor deposition (CVD) methods and the difficulty in maintaining the optoelectronic performance stably of fiber prepared by common rod-in-tube fiber-drawing technique. In this review, a versatile fiber-drawing approach which is called “melt-in-tube” (MIT) or “molten core” is presented to produce hybrid glass optical fibers. During the fiber-drawing process, the core is melted whereas the cladding is only just softened. The recent advances of the hybrid glass fibers including glass core-glass cladding fiber, crystal core-glass cladding fiber, and semiconductor core-glass cladding fiber are reported. In addition, the extensive applications of the hybrid glass fibers in the fields of fiber laser, fiber sensing, frequency conversion, photodetection and thermoelectric conversion are also discussed. These breakthroughs and advances in novel fiber materials and applications offer new opportunities for the research and development of optoelectronic devices.
关键词： optoelectronic properties,melt-in-tube or molten core method,hybrid glass fiber
更新于2025-09-23 15:19:57
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Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry
摘要： Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700?1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs.
关键词： colloidal synthesis,InAs quantum dots,short-wave infrared,optoelectronic applications,near-infrared
更新于2025-09-23 15:19:57
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A surface photovoltaic effect-related high-performance photodetector based on a single CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> micro/nanowire
摘要： With the decrease of materials to the nanoscale, their surface states will play a crucial role in their performance. Here, an individual CH3NH3PbI3 micro/nanowire-based photodetector can show excellent sensitivity and responsivity to light with a wide wavelength range from 200 to 850 nm. A surface state-related photovoltaic effect associated with a surface barrier can be formed due to a depletion of majority carriers (holes) in the surface space charge region. At a low operation voltage, the photodetector can exhibit a low dark current. Upon illuminating near the end connected to the positive electrode, the light-induced decrease of the surface barrier leads to enhanced conduction, showing a large photocurrent. At zero bias, additionally, the photodetector can show a relatively large photogenerated voltage and current when only the vicinity of one end is illuminated. Based on the CH3NH3PbI3 micro/nanostructure performance herein, surface photovoltaic-controlled photodetectors with superior performance will have important applications in new-generation optoelectronic devices.
关键词： CH3NH3PbI3,optoelectronic devices,photodetector,surface photovoltaic effect,micro/nanowire
更新于2025-09-23 15:19:57